Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. PINNING - TO220AB PIN QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VDS ID Ptot Tj RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance 60 52 150 175 0.028 V A W ˚C Ω PIN CONFIGURATION DESCRIPTION 1 gate 2 drain 3 source tab PHP50N06 SYMBOL d tab g drain s 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C - - 55 - 60 60 30 52 36 208 150 175 175 V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a August 1996 CONDITIONS 1 MIN. TYP. MAX. UNIT - - 1.0 K/W - 60 - K/W Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor PHP50N06 STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance VGS(TO) IDSS IDSS IGSS RDS(ON) MIN. TYP. MAX. UNIT VGS = 0 V; ID = 0.25 mA 60 - - V VDS = VGS; ID = 1 mA VDS = 60 V; VGS = 0 V; Tj = 25 ˚C VDS = 60 V; VGS = 0 V; Tj = 125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; ID = 29 A 2.1 - 3.0 1 0.1 10 0.024 4.0 10 1.0 100 0.028 V µA mA nA Ω MIN. TYP. MAX. UNIT DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 25 V; ID = 29 A 17 22 - S Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 800 270 2000 1000 400 pF pF pF td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 Ω; Rgen = 50 Ω - 20 70 170 120 30 100 220 160 ns ns ns ns Ld Internal drain inductance - 3.5 - nH Ld Internal drain inductance - 4.5 - nH Ls Internal source inductance Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad - 7.5 - nH MIN. TYP. MAX. UNIT REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IDR - - - 52 A IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage IF = 52 A ; VGS = 0 V - 1.8 208 2.5 A V trr Qrr Reverse recovery time Reverse recovery charge IF = 52 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V - 80 0.4 - ns µC August 1996 2 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor 120 PHP50N06 Normalised Power Derating PD% Zth j-mb / (K/W) 10 BUKx56-lv 110 100 90 D= 1 80 0.5 70 0.2 0.1 0.05 60 0.1 50 0.02 40 30 0.01 tp PD 10 0 0 20 40 60 80 100 Tmb / C 120 140 160 1E-05 1E-01 1E+01 Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Normalised Current Derating ID% 1E-03 t/s tp T t T 0.001 180 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) 120 D= 0 20 100 110 ID / A 20 BUK456-50A 8 10 15 100 80 90 VGS / V = 7 80 60 70 60 6 50 40 40 30 5 20 20 10 4 0 0 0 20 40 60 80 100 Tmb / C 120 140 160 180 2 ID / A 0.20 DS )= 100 V 8 10 BUK456-50A RDS(ON) / Ohm 4 A B 6 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS BUK456-60 /ID 4 VDS / V Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V 1000 0 4.5 5 5.5 6 6.5 0.15 tp = 10 us VGS / V = 7 ON S( 7.5 RD 100 us 8 0.10 1 ms 10 10 ms DC 0.05 100 ms 10 0.00 1 1 0 100 10 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp August 1996 20 40 60 80 100 ID / A VDS / V Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS 3 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor PHP50N06 ID / A 100 VGS(TO) / V BUK456-50A max. 4 25 Tj / C = 80 typ. 3 150 60 min. 2 40 1 20 0 0 0 2 4 6 8 10 -60 -20 20 VGS / V 100 140 180 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj gfs / S 60 Tj / C BUK456-50A SUB-THRESHOLD CONDUCTION ID / A 1E-01 1E-02 20 2% 1E-03 typ 98 % 1E-04 10 1E-05 0 1E-06 0 20 40 60 80 100 0 1 2 VGS / V ID / A Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V 2.0 a 3 4 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Normalised RDS(ON) = f(Tj) 10000 BUK4y6-50 C / pF 1.5 Ciss 1000 Coss 1.0 Crss 100 0.5 10 0 -60 -20 20 60 Tj / C 100 140 0 180 40 VDS / V Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 29 A; VGS = 10 V August 1996 20 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 4 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor 12 PHP50N06 BUK456-50 VGS / V 100 IF / A BUK456-50A VDS / V =10 10 40 8 50 6 4 150 C 25 C 2 0 0 0 20 40 QG / nC Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 52 A; parameter VDS August 1996 0 1 VSDS / V 2 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj 5 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor PHP50N06 MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.15. TO220AB; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". August 1996 6 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor PHP50N06 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1996 7 Rev 1.000