MMDT4146 NEW PRODUCT COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · Complementary Pair One 4124-Type NPN, One 4126-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 · · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K12 Weight: 0.006 grams (approx.) Maximum Ratings, NPN 4124 Section Characteristic E1 KXX E2 Mechanical Data · · B1 B2 B C C1 H K M J D F L E1, B1, C1 = PNP4126 Section E2, B2, C2 = NPN4124 Section Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm @ TA = 25°C unless otherwise specified Symbol NPN 4124 Section Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 200 mA Power Dissipation (Note 1, 2) Pd 200 mW RqJA 625 K/W Thermal Resistance, Junction to Ambient (Note 1) Maximum Ratings, PNP 4126 Section Characteristic @ TA = 25°C unless otherwise specified Symbol PNP 4126 Section Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -200 mA Power Dissipation (Note 1, 2) Pd 200 mW RqJA 625 K/W Thermal Resistance, Junction to Ambient (Note 1) Notes: 1. Valid provided that terminals are kept at ambient temperature. Total device dissipation. 2. Maximum combined dissipation. DS30162 Rev. D-1 1 of 2 MMDT4146 NEW PRODUCT Electrical Characteristics, NPN 4124 Section Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 30 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO 25 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 6.0 V IE = 10mA, IC = 0 Collector Cutoff Current ICBO ¾ 50 nA VCB = 20V, IE = 0V Emitter Cutoff Current IEBO ¾ 50 nA VEB = 3.0V, IC = 0V hFE 120 60 360 ¾ ¾ IC = 2.0mA, VCE = 1.0V IC = 50mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.30 V IC = 50mA, IB = 5.0mA Base- Emitter Saturation Voltage VBE(SAT) ¾ 0.95 V IC = 50mA, IB = 5.0mA Output Capacitance Cobo ¾ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Small Signal Current Gain hfe 120 480 ¾ Current Gain-Bandwidth Product fT 300 ¾ MHz VCE = 1.0V, IC = 2.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz OFF CHARACTERISTICS (Note 3) IC = 10mA, IE = 0 ON CHARACTERISTICS (Note 3) DC Current Gain SMALL SIGNAL CHARACTERISTICS Electrical Characteristics, PNP 4126 Section Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -25 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -25 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage OFF CHARACTERISTICS (Note 3) V(BR)EBO -4.0 ¾ V IE = -10mA, IC = 0 Collector Cutoff Current ICBO ¾ -50 nA VCB = -20V, IE = 0V Emitter Cutoff Current IEBO ¾ -50 nA VEB = -3.0V, IC = 0V hFE 120 60 360 ¾ ¾ IC = -2.0mA, VCE = -1.0V IC = -50mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 V IC = -50mA, IB = -5.0mA Base- Emitter Saturation Voltage VBE(SAT) ¾ -0.95 V IC = -50mA, IB = -5.0mA Output Capacitance Cobo ¾ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Small Signal Current Gain hfe 120 480 ¾ Current Gain-Bandwidth Product fT 250 ¾ MHz VCE = -1.0V, IC = -2.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz Noise Figure NF ¾ 4.0 dB ON CHARACTERISTICS (Note 3) DC Current Gain SMALL SIGNAL CHARACTERISTICS Notes: VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30162 Rev. D-1 2 of 2 MMDT4146