DIODES MMDT4146

MMDT4146
NEW PRODUCT
COMPLEMENTARY NPN / PNP
SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
Complementary Pair
One 4124-Type NPN,
One 4126-Type PNP
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and
Switching
Ultra-Small Surface Mount Package
SOT-363
A
C2
·
·
·
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K12
Weight: 0.006 grams (approx.)
Maximum Ratings, NPN 4124 Section
Characteristic
E1
KXX
E2
Mechanical Data
·
·
B1
B2
B C
C1
H
K
M
J
D
F
L
E1, B1, C1 = PNP4126 Section
E2, B2, C2 = NPN4124 Section
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Symbol
NPN 4124 Section
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous (Note 1)
IC
200
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
RqJA
625
K/W
Thermal Resistance, Junction to Ambient (Note 1)
Maximum Ratings, PNP 4126 Section
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
PNP 4126 Section
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current - Continuous (Note 1)
IC
-200
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
RqJA
625
K/W
Thermal Resistance, Junction to Ambient (Note 1)
Notes:
1. Valid provided that terminals are kept at ambient temperature. Total device dissipation.
2. Maximum combined dissipation.
DS30162 Rev. D-1
1 of 2
MMDT4146
NEW PRODUCT
Electrical Characteristics, NPN 4124 Section
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
30
¾
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
6.0
V
IE = 10mA, IC = 0
Collector Cutoff Current
ICBO
¾
50
nA
VCB = 20V, IE = 0V
Emitter Cutoff Current
IEBO
¾
50
nA
VEB = 3.0V, IC = 0V
hFE
120
60
360
¾
¾
IC = 2.0mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.30
V
IC = 50mA, IB = 5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
¾
0.95
V
IC = 50mA, IB = 5.0mA
Output Capacitance
Cobo
¾
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Small Signal Current Gain
hfe
120
480
¾
Current Gain-Bandwidth Product
fT
300
¾
MHz
VCE = 1.0V, IC = 2.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
OFF CHARACTERISTICS (Note 3)
IC = 10mA, IE = 0
ON CHARACTERISTICS (Note 3)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Electrical Characteristics, PNP 4126 Section
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-25
¾
V
IC = -10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-25
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
OFF CHARACTERISTICS (Note 3)
V(BR)EBO
-4.0
¾
V
IE = -10mA, IC = 0
Collector Cutoff Current
ICBO
¾
-50
nA
VCB = -20V, IE = 0V
Emitter Cutoff Current
IEBO
¾
-50
nA
VEB = -3.0V, IC = 0V
hFE
120
60
360
¾
¾
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.40
V
IC = -50mA, IB = -5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
¾
-0.95
V
IC = -50mA, IB = -5.0mA
Output Capacitance
Cobo
¾
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Small Signal Current Gain
hfe
120
480
¾
Current Gain-Bandwidth Product
fT
250
¾
MHz
VCE = -1.0V, IC = -2.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
¾
4.0
dB
ON CHARACTERISTICS (Note 3)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Notes:
VCE = -5.0V, IC = -100mA,
RS = 1.0kW, f = 1.0kHz
3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30162 Rev. D-1
2 of 2
MMDT4146