MOTOROLA MPQ7091

Order this document
by MPQ7091/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
14
13
12
11
10
9
8
6
7
COMPLEMENTARY
*Motorola Preferred Device
1
2
3
4
5
TYPE B
MAXIMUM RATINGS
Rating
Symbol
MPQ7091
MPQ7093
Unit
Collector – Emitter Voltage
VCEO
–150
–250
Vdc
Collector – Base Voltage
VCBO
–150
–250
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
IC
–500
mAdc
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
Each Die
Four Die
Equal
Power
750
5.98
1700
13.6
mW
mW/°C
1.25
10
3.2
25.6
Watts
mW/°C
TJ, Tstg
–55 to +150
14
1
CASE 646–06, STYLE 1
TO–116
°C
THERMAL CHARACTERISTICS
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
100
39
167
73.5
°C/W
°C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
46
5.0
56
10
%
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
–150
–250
—
—
—
—
–150
–250
—
—
—
—
–5.0
—
—
—
—
—
—
–250
–250
—
—
–100
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
V(BR)CEO
MPQ7091
MPQ7093
V(BR)CBO
MPQ7091
MPQ7093
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –120 Vdc, IE = 0)
Vdc
Vdc
V(BR)EBO
Vdc
ICBO
MPQ7091
MPQ7093
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
nAdc
IEBO
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
Max
25
35
25
40
55
50
—
—
—
—
–0.3
–0.5
—
–0.7
–0.9
50
70
—
—
3.0
5.0
—
60
75
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
hFE
—
Collector – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VBE(sat)
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = –20 Vdc, IE = 0, f =1.0 MHz)
Cobo
Input Capacitance
(VEB = –3.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
MHz
pF
pF
DC CHARACTERISTICS
–1.4
200
VCE = –10 V
TJ = 125°C
TJ = 25°C
25°C
100
V, VOLTAGE (VOLTS)
h FE, DC CURRENT GAIN
–1.2
–55°C
70
50
30
20
–1.0
–1.0
–0.8
VBE(sat) @ IC/IB = 10
–0.6
VBE(on) @ VCE = –10 V
–0.4
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
0
–1.0
–50 –70 –100
5.0
VCE(sat) @ IC/IB = 10
–0.2
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. “ON” Voltages
–50 –70 –100
q V , TEMPERATURE COEFFICIENT (mV/° C)
2.5
IC/IB = 10
2.0
1.5
25°C TO 125°C
1.0
0.5
qVC FOR VCE(sat)
–55°C TO 25°C
0
–0.5
–1.0
–1.5
–55°C TO 125°C
qVB FOR VBE
–2.0
–2.5
–1.0
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
IC, COLLECTOR CURRENT (mA)
Figure 3. Temperature Coefficients
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
14
8
1
7
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
B
A
F
L
C
J
N
H
G
D
SEATING
PLANE
K
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
DIM
A
B
C
D
F
G
H
J
K
L
M
N
INCHES
MIN
MAX
0.715
0.770
0.240
0.260
0.145
0.185
0.015
0.021
0.040
0.070
0.100 BSC
0.052
0.095
0.008
0.015
0.115
0.135
0.300 BSC
0_
10_
0.015
0.039
MILLIMETERS
MIN
MAX
18.16
19.56
6.10
6.60
3.69
4.69
0.38
0.53
1.02
1.78
2.54 BSC
1.32
2.41
0.20
0.38
2.92
3.43
7.62 BSC
0_
10_
0.39
1.01
CASE 646–06
TO–116
ISSUE M
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
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4
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MPQ7091/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data