ONSEMI MPS6717

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by MPS6717/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
80
Vdc
Collector – Base Voltage
VCBO
80
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
80
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
—
0.1
µAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
—
10
µAdc
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
MPS6717
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
80
50
—
250
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 250 mAdc, VCE = 1.0 Vdc)
hFE
—
Collector – Emitter Saturation Voltage
(IC = 250 mAdc, IB = 10 mAdc)
VCE(sat)
—
0.5
Vdc
Base – Emitter On Voltage
(IC = 250 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
1.2
Vdc
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
30
pF
Small–Signal Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
hfe
2.5
25
—
SMALL– SIGNAL CHARACTERISTICS
400
hFE , DC CURRENT GAIN
TJ = 125°C
VCE = 1.0 V
200
25°C
–55°C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500
1.0
1.0
TJ = 25°C
0.6
0.8
IC = 10 mA
50
mA
100 mA
250 mA
500 mA
0.4
0.2
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
IB, BASE CURRENT (mA)
10
20
Figure 2. Collector Saturation Region
2
TJ = 25°C
0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
50
0
0.5
1.0
2.0
5.0
10
50
100
20
IC, COLLECTOR CURRENT (mA)
200
500
Figure 3. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
80
–0.8
TJ = 25°C
60
–1.2
40
C, CAPACITANCE (pF)
θ VB, TEMPERATURE COEFFICIENT (mV/°C)
MPS6717
–1.6
θVB for VBE
–2.0
–2.4
Cibo
20
10
8.0
6.0
–2.8
0.5
1.0
2.0
5.0
20
50
10
100
IC, COLLECTOR CURRENT (mA)
200
Cobo
4.0
0.1
500
0.2
0.5 1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 5. Capacitance
300
200
VCE = 2.0 V
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 4. Base–Emitter Temperature Coefficient
50
100
70
50
DUTY CYCLE ≤ 10%
2k
1.0 ms
1k
100 µs
500
TA = 25°C
200
TC = 25°C
dc
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
100
50
1.0 s
dc
20
30
2.0
3.0
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 6. Current–Gain — Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
10
1.0
MPS6717
10
20
60 80 100
2.0
5.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating Area
3
MPS6717
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
A
B
R
SEATING
PLANE
P
L
F
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
K
X X
D
G
H
J
V
1 2 3
SECTION X–X
N C
N
CASE 029–05
(TO–226AE)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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4
◊
MPS6717/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data