Order this document by BF393/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 300 Vdc Collector – Base Voltage VCBO 300 Vdc Emitter – Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Ambient Characteristic RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 300 — 300 — 6.0 — — 0.1 — 0.1 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB =0) V(BR)CEO Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Vdc Vdc Vdc µAdc µAdc (Replaces BF392/D) Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 BF393 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 25 40 — — — 2.0 — 2.0 50 — — 2.0 Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) hFE Collector – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = 60 Vdc, IE = 0, f = 1.0 MHz) 2 fT MHz Cre pF Motorola Small–Signal Transistors, FETs and Diodes Device Data BF393 200 hFE, DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 25°C 50 –55°C 30 20 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 100 70 100 C, CAPACITANCE (pF) 50 Ceb 20 10 5.0 Ccb 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 200 f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 100 70 50 30 20 10 1.0 Figure 2. Capacitances 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 500 IC, COLLECTOR CURRENT (mA) TJ = 25°C 1.2 V, VOLTAGE (VOLTS) 2.0 Figure 3. Current–Gain — Bandwidth Product 1.4 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 TJ = 25°C VCE = 20 V f = 20 MHz VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 4. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 200 100 10 µs 100 µs TA = 25°C 1.0 ms TC = 25°C 50 100 ms 20 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25°C) SECOND BREAKDOWN LIMIT 10 5.0 2.0 1.0 CURVES APPLY BELOW RATED VCEO 0.5 0.5 1.0 2.0 5.0 10 20 MPSA43 MPSA42 50 100 200 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Maximum Forward Bias Safe Operating Area 3 BF393 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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