Order this document by BF420/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol BF420 BF422 Unit Collector – Emitter Voltage VCEO 300 250 Vdc Collector – Base Voltage VCBO 300 250 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 2 3 CASE 29–11, STYLE 14 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 300 250 — — 300 250 — — 5.0 5.0 — — — — 0.01 — — — 100 — Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. V(BR)CEO BF420 BF422 Vdc V(BR)CBO BF420 BF422 Vdc V(BR)EBO BF420 BF422 Vdc µAdc ICBO BF420 BF422 IEBO BF420 BF422 nAdc REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1998 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 50 50 — — — 0.5 — 2.0 60 — — 1.6 Unit ON CHARACTERISTICS DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) hFE BF420 BF422 Collector – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) 2 fT MHz Cre pF Motorola Small–Signal Transistors, FETs and Diodes Device Data 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 –55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 f T, CURRENT–GAIN — BANDWIDTH (MHz) 80 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 70 60 50 40 30 TJ = 25°C VCE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current–Gain – Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ –55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ –55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ –55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– N CASE 029–11 (TO–226AA) ISSUE AJ STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE Motorola reserves the right to make changes without further notice to any products herein. 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