ONSEMI MPSA43

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by MPSA42/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
MPSA42
MPSA43
Unit
Collector – Emitter Voltage
VCEO
300
200
Vdc
Collector – Base Voltage
VCBO
300
200
Vdc
Emitter – Base Voltage
VEBO
6.0
6.0
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/mW
Thermal Resistance, Junction to Case
RqJC
83.3
°C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
300
200
—
—
300
200
—
—
6.0
—
—
—
0.1
0.1
—
—
0.1
0.1
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MPSA42
MPSA43
V(BR)CBO
MPSA42
MPSA43
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
MPSA42
MPSA43
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MPSA42
MPSA43
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Vdc
Vdc
Vdc
µAdc
ICBO
µAdc
IEBO
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1998
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
25
40
40
—
—
—
—
—
0.5
0.4
VBE(sat)
—
0.9
Vdc
fT
50
—
MHz
—
—
3.0
4.0
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
Collector – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
hFE
—
VCE(sat)
MPSA42
MPSA43
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
2
v 300 ms, Duty Cycle v 2.0%.
Ccb
MPSA42
MPSA43
pF
Motorola Small–Signal Transistors, FETs and Diodes Device Data
120
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
100
80
25°C
60
40
–55°C
20
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
f T, CURRENT–GAIN — BANDWIDTH (MHz)
80
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
0.1
0.1
Ccb @ 1MHz
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
70
60
50
40
30
TJ = 25°C
VCE = 20 V
f = 20 MHz
20
10
1.0
2.0 3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 3. Current–Gain – Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ –55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ –55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ –55°C, VCE = 10 V
0.6
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. ”ON” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
N
CASE 029–11
(TO–226AA)
ISSUE AJ
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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4
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MPSA42/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data