Order this document by MPS4126/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCE –25 Vdc Collector – Base Voltage VCB –25 Vdc Emitter – Base Voltage VEB –4.0 Vdc Collector Current — Continuous IC –200 mAdc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Ambient Characteristic RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max –25 — –25 — –4.0 — — –50 — –50 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –1.0 mA, IB = 0) V(BR)CEO Collector – Base Breakdown Voltage (IC = –10 mA, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IC = 0, IE = –10 mA) V(BR)EBO Collector Cutoff Current (VCB = –20 V, IE = 0) ICBO Emitter Cutoff Current (VEB = –3.0 V, IC = 0) IEBO Vdc Vdc Vdc nAdc nAdc (Replaces MPS4125/D) Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 MPS4126 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 120 60 360 — — –0.4 — –0.95 170 — — 4.5 — 11.5 120 480 — 4.0 Unit ON CHARACTERISTICS DC Current Gain (IC = –2.0 mA, VCE = –1.0 V) (IC = –50 mA, VCE = –1.0 V) hFE Collector – Emitter Saturation Voltage (IC = –50 mA, IB = –5.0 mA) VCE(sat) Base – Emitter Saturation Voltage (IC = –50 mA, IB = –5.0 mA) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –20 V, f = 100 MHz) fT Output Capacitance (VCB = –5.0 V, IE = 0, f = 1.0 MHz) Cob Input Capacitance (VEB = –0.5 V, IC = 0, f = 1.0 MHz) Cib Small–Signal Current Gain (IC = –2.0 mA, VCE = 1.0 V, f = 1.0 kHz) hfe Noise Figure (IC = –100 mA, VCE = –5.0 V, RS = 1.0 kΩ, f = 1.0 kHz) NF 2 MHz pF pF — dB Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS4126 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 3 MPS4126 Motorola reserves the right to make changes without further notice to any products herein. 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