Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class A and class AB amplifier applications. Suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers. 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics Output Power — 30 Watts (PEP) Power Gain — 9.8 dB Efficiency — 34% Intermodulation Distortion — –28 dBc • Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics Output Power — 30 Watts Power Gain — 10.5 dB Efficiency — 40% • Excellent Thermal Stability CASE 395D–03, STYLE 1 • Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP) Output Power • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Designed for FM, TDMA, CDMA, and Multi–Carrier Applications MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Emitter Voltage VCES 60 Vdc Collector–Base Voltage VCBO 60 Vdc Collector–Emitter Voltage (RBE = 100 Ω) VCER 30 Vdc VEB –3 Vdc Collector Current – Continuous IC 4 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 125 0.71 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 1.4 °C/W Emitter–Base Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case (1) (1) Thermal resistance is determined under specified RF operating condition. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) V(BR)CEO 25 26 — Vdc Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 60 70 — Vdc Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 60 70 — Vdc OFF CHARACTERISTICS REV 1 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF20030 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)EBO 3 3.8 — Vdc ICES — — 10 mAdc hFE 20 40 80 — Cob — 28 — pF Gpe 9.8 10.5 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) η 34 38 — % Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD — – 33 – 28 dBc Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 10 17 — dB OFF CHARACTERISTICS Emitter–Base Breakdown Voltage (IB = 5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (VCE = 5 Vdc, ICE = 1 Adc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) FUNCTIONAL TESTS (In Motorola Test Fixture) Common–Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts, ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Load Mismatch (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) ψ No Degradation in Output Power Common–Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gpe — 10.5 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) η — 34 — % Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD — – 35 — dBc Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL — 14 — dB Common–Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz) Gpe — 10.5 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) η — 40 — % Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) IRL — 14 — dB GUARANTEED BUT NOT TESTED (In Motorola Test Fixture) Output Mismatch Stress (VCC = 25 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) ψ Typically No Degradation in Output Power (1) For Information Only. This Part Is Collector Matched. MRF20030 2 MOTOROLA RF DEVICE DATA VBB R1 R2 L4 L1 Q2 B1 D1 VCC B2 C8 C6 + + Q1 C1 R3 C2 R5 R8 C9 C7 R4 C13 C14 R7 R6 L4 L2 Z5 RF INPUT Z1 C3 B1, B2 C1, C13 C2 C3, C5, C12 C4, C11 C6, C8 C7, C9 C10 C14 D1 L1, L4 L2, L3 Z2 Z3 C4 Z6 Z7 Z8 Z4 C5 Ferrite Bead, P/N 5659065/3B, Ferroxcube 0.1 µF, Chip Capacitor, Kermet 100 µF, 50 V, Electrolytic Capacitor, Mallory 0.6–4 pF, Variable Capacitor, Johanson, Gigatrim 10 pF, B Case Chip Capacitor, ATC 24 pF, B Case Chip Capacitor, ATC 75 pF, B Case Chip Capacitor, ATC 0.4–2.5 pF, Variable Capacitor, Johanson, Gigatrim 470 µF, 63 V, Electrolytic Capacitor, Mallory Diode, Motorola (MUR3160T3) 12 Turns, 22 AWG, IDIA. 0.195″ 0.750″ 20 AWG DUT N1, N2 R1, R2 R3, R4 R5, R8 R6, R7 Q1 Q2 Board C10 C11 RF OUT C12 Type N Flange Mount RF Connector MA/COM 3052–1648–10 130 Ω, 1/8 W Chip Resistor, Rohm 100 Ω, 1/8 W Chip Resistor, Rohm 10 Ω, 1/2 W Resistor 10 Ω, 1/8 W Chip Resistor, Rohm (10J) Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) 30 Mil Glass Teflon, Arlon GX–0300–55–22, εr = 2.55 Figure 1. Class AB Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF20030 3 Vsupply + C2 R1 R5 VCC R2 VCC Q1 R3 Q2 R4 R8 R6 B2 + R7 B1 C8 C6 C11 + C12 C14 C15 R9 C5 C7 L2 L1 N2 C10 N1 RF INPUT C3 Z6 Z1 Z2 C1 B1, B2 C1, C9, C13 C2, C8 C3, C10 C4 C5, C11 C6, C14 C7, C12 C15 L1, L2 N1, N2 Z3 C4 Z4 Z5 Long Bead, Fair Rite 0.6–4 pF, Variable Capacitor, Johanson, Gigatrim 100 µF, 50 V, Electrolytic Capacitor, Mallory 18 pF B Case Chip Capacitor, ATC 1.3 pF, B Case Chip Capacitor, ATC 24 pF, B Case Chip Capacitor, ATC 0.1 mF, Chip Capacitor, Kermet 75 pF, B Case Chip Capacitor, ATC 470 mF, 63 V, Electrolytic Capacitor, Mallory 0.75 in., 20 AWG Type N Flange Mount RF Connector, MA/COM DUT Q1 Q2 R1 R2 R3 R4 R5 R6 R7, R9 R8 Board Z8 Z7 Z9 Z10 RF OUTPUT C13 C9 Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola (BD136) 250 W, Chip Resistor, 1/8 Watt, Rohm 500 W, 1/4 Watt, Potentiometer 4.7 kW, Chip Resistor, 1/8 Watt, Rohm 2 x 4.7 kW, Chip Resistor, 1/8 Watt, Rohm 1.0 W, 10 Watt, Resistor, DALE 39 W, 1 Watt, Resistor 4 x 39 W, Chip Resistors, 1/8 Watt, Rohm 75 W, Chip Resistor, 1/8 Watt, Rohm 30 Mil Glass Teflon, Arlon GX–0300–55–22, εr = 2.55 Figure 2. Class A Test Fixture Electrical Schematic MRF20030 4 MOTOROLA RF DEVICE DATA 11.5 40 30 11 35 Pin = 3.5 W 30 2.5 W Pout 25 10.5 20 10 9.5 9 10 VCC = 26 Vdc ICQ = 125 mA f = 2000 MHz Single Tone 5 8.5 1 0 3 2 Pin, INPUT POWER (WATTS) 4 20 1.5 W 15 10 VCC = 26 Vdc ICQ = 125 mA 5 0 1800 8 5 0 25 – 20 1950 2000 –5 11.5 11 –10 3rd Order – 30 10.5 – 40 5th Order – 50 7th Order VCC = 26 Vdc ICQ = 125 mA f1 = 2000.0 MHz f2 = 2000.1 MHz – 60 – 70 0 5 10 –20 9.5 –25 9 –30 Pout = 30 W (PEP) ICQ = 125 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 8.5 8 10 30 15 25 20 Pout, OUTPUT POWER (WATTS) PEP 35 40 7.5 – 30 11 G pe , POWER GAIN (dB) 12 – 40 – 45 125 mA – 50 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz – 55 400 mA – 60 0.01 0.1 1.0 –40 –45 28 20 ICQ = 400 mA 250 mA 9 125 mA 8 7 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 6 10 –35 24 26 22 VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) 18 10 ICQ = 75 mA 250 mA IMD Figure 6. Power Gain and Intermodulation Distortion versus Supply Voltage – 25 – 35 –15 Gpe Figure 5. Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) 1900 f, FREQUENCY (MHz) Figure 4. Output Power versus Frequency G pe , GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Output Power & Power Gain versus Input Power 1850 100 5 0.01 75 mA 0.1 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power Figure 8. Power Gain versus Output Power MOTOROLA RF DEVICE DATA IMD, INTERMODULATION DISTORTION (dBc) Gpe 15 Pout , OUTPUT POWER (WATTS) 35 G pe , GAIN (dB) Pout , OUTPUT POWER (WATTS) TYPICAL CHARACTERISTICS MRF20030 5 MTBF LIMITED Tflange = 75°C 2.5 10.5 G pe , GAIN (dB) 3 Tflange = 100°C 2 1.5 1 TJ = 175°C 0.5 0 0 4 8 12 16 20 24 VCE, COLLECTOR SUPPLY VOLTAGE (Vdc) 36 10 34 η 9.5 32 VSWR 28 9 1800 Figure 9. DC Class A Safe Operating Area 1850 1900 f, FREQUENCY (MHz) 1950 28 2000 1.7:1 1.1:1 Figure 10. Performance in Broadband Circuit 60 1.E+10 MTBF FACTOR (HOURS x AMPS 2 ) Pout , OUTPUT POWER (dBm) Gpe COLLECTOR EFFICIENCY (%) 3.5 38 Pout = 30 W (PEP) VCC = 26 Vdc ICQ = 125 mA INPUT VSWR 11 BREAKDOWN LIMITED IC, COLLECTOR CURRENT (Adc) 4 40 FUNDAMENTAL 20 0 3rd Order – 20 VCC = 24 Vdc ICQ = 1.8 Adc f1 = 2000.0 MHz f2 = 2000.1 MHz 10 20 30 Pin, INPUT POWER (dBm) 40 Figure 11. Class A Third Order Intercept Point 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 – 40 0 1.E+09 50 1.E+02 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (°C) 250 This above graph displays calculated MTBF in hours x ampere2 emitter current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF factor by IC2 for MTBF in a particular application. Figure 12. MTBF Factor versus Junction Temperature MRF20030 6 MOTOROLA RF DEVICE DATA + j1 + j0.5 + j2 f = 1.8 GHz 1.85 GHz Zin + j0.2 + j5 1.9 GHz 1.95 GHz 2 GHz f = 1.8 GHz ZOL* 1.95 GHz 1.9 GHz 0.2 0.0 + j3 Zo = 10 Ω + j10 1.85 GHz 0.5 1 2 3 5 – j10 – j5 – j0.2 – j3 – j2 – j0.5 – j1 VCC = 26 V, ICQ = 125 mA, Pout = 30 W (PEP) f MHz Zin(1) Ω ZOL* Ω 1800 4.5 + j7.0 4.7 + j2.4 1850 4.5 + j6.0 4.4 + j1.6 1900 4.5 + j4.6 3.4 + j1.2 1950 3.7 + j2.4 3.3 + j1.6 2000 3.5 + j1.5 3.5 + j2.0 Zin(1)= Conjugate of fixture base impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 13. Series Equivalent Input and Output Impedence MOTOROLA RF DEVICE DATA MRF20030 7 Table 1. Common Emitter S–Parameters at VCE = 24 Vdc, IC = 1.8 Adc f GHz GH S11 S21 S12 S22 |S11| ∠f |S21| ∠f |S12| ∠f |S22| ∠f 1.5 .964 158 .65 74 .046 60 .859 161 1.55 .960 156 .74 68 .047 56 .841 161 1.6 .952 155 .87 60 .049 53 .815 160 1.65 .933 153 1.05 50 .048 46 .787 161 1.7 .892 149 1.32 35 .047 40 .744 163 1.75 .804 149 1.64 13 .040 29 .719 168 1.8 .727 157 1.78 –18 .026 21 .778 175 1.85 .787 163 1.50 –50 .015 54 .883 174 1.9 .873 163 1.14 –73 .020 81 .937 171 1.95 .921 160 .84 –89 .026 88 .949 168 2 .941 157 .62 –102 .031 93 .950 165 2.05 .943 155 .48 –109 .036 93 .946 164 2.1 .940 153 .38 –118 .040 92 .942 163 2.15 .928 151 .30 –127 .042 97 .939 162 2.2 .917 150 .24 –133 .049 99 .935 161 2.25 .907 150 .20 –140 .056 101 .933 160 2.3 .888 148 .17 –150 .066 100 .926 159 2.35 .861 148 .14 –159 .077 98 .916 157 2.4 .853 149 .11 –167 .087 92 .909 157 2.45 .860 146 .10 –176 .095 89 .900 155 2.5 .880 146 .10 156 .119 84 .880 155 MRF20030 8 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. U 1 W –B– 3 K 2 PL 2 Q 2 PL 0.51 (0.020) D N J H M T A M B E M DIM A B C D E H J K N Q U W INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.060 0.070 0.084 0.096 0.004 0.006 0.178 0.208 0.315 0.330 0.125 0.135 0.560 BSC 0.035 0.045 MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.52 1.78 2.13 2.44 0.10 0.15 4.52 5.28 8.00 8.38 3.18 3.42 14.23 BSC 0.89 1.14 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER C –T– SEATING PLANE CASE 395D–03 ISSUE B MOTOROLA RF DEVICE DATA MRF20030 9 Motorola reserves the right to make changes without further notice to any products herein. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRF20030 10 ◊ MRF20030/D MOTOROLA RF DEVICE DATA