Order this document by TP3061/D SEMICONDUCTOR TECHNICAL DATA The RF Line The TP3061 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output matching networks, the TP3060 features high impedances and is easy to match. • Motorola Advanced Amplifier Concept Package 45 W, 960 MHz UHF POWER TRANSISTOR NPN SILICON • Oxynitride Passivation • Specified 26 Volts, 960 MHz Characteristics Output Power = 45 Watts Minimum Gain = 8.0 dB Efficiency = 50% • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 333A–02, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCER 40 Vdc Collector–Base Voltage VCBO 48 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 10 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 175 1.0 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 1.2 °C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) at 70°C Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 60 mA, RBE = 75 Ω) V(BR)CER 40 — — Vdc Emitter–Base Breakdown Voltage (IC = 6.0 mAdc) V(BR)EBO 3.5 — — Vdc Collector–Base Breakdown Voltage (IE = 60 mAdc) V(BR)CBO 48 — — Vdc ICER — — 15 mA Characteristic OFF CHARACTERISTICS Collector–Emitter Leakage (VCE = 26 V, RBE = 75 Ω) NOTE: 1. Thermal resistance is determined under specified RF operating condition. (continued) REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 TP3061 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit hFE 15 — 100 — Cob 45 60 — pF Gp 8.0 8.8 — dB Collector Efficiency (VCC = 26 V, Pout = 45 W, f = 960 MHz) η 50 53 — % Load Mismatch (VCC = 26 V, Pout = 45 W, ICQ = 200 mA, Load VSWR = 5:1, at all phase angles) ψ Characteristic ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (2) (VCB = 26 V, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 26 V, Pout = 45 W, ICQ = 200 mA, f = 960 MHz) Overdrive (VCC = 26 V, Pin = 15 W, f = 960 MHz) No Degradation in Output Power Before and After Test OD No Degradation in Output Power NOTE: 2. Value of “Cob” is that of die only. It is not measurable in TP3061 because of internal matching network. C8 C9 T1 C6 C5 + T3 + + R4 C10 + VCC C11 R3 C6 R1 C4 C7 C12 R5 R2 T2 L1 L2 D.U.T. RF INPUT 50 Ω C2 RF OUTPUT 50 Ω C1 C1, C4, C7, C12 — Capacitor Chip 0805 330 pF 5% C2 — Capacitor Chip 82 pF ATC C5, C11, C8 — Capacitor Chip 0805 15 nF 5% C6, C9, C10 — Capacitor Chip 0805 6.0, 8.0 µF 35 V L1, L2 — 1.5 Turns #18 AWG Choke R1 — Chip Resistor 47 Ω 1206 5% R2 — Chip Resistor 270 Ω 0805 5% R3 — Chip Resistor 47 Ω 0805 5% R4 — Chip Resistor 100 Ω 0805 5% R5 — Trimmer 1.0 kΩ T1 — SMD Transistor MJD31C or Similar T2 — SMD Transistor T3 — Voltage Regulator 7805 Board Material — 1/50″, Teflon Glass, εr = 2.5, Cu Clad 2 Sides, 35 µm Thick Figure 1. 960 MHz Test Circuit TP3061 2 MOTOROLA RF DEVICE DATA 80 70 70 60 Po, OUTPUT POWER (WATTS) Po, OUTPUT POWER (WATTS) TYPICAL CHARACTERISTICS 80 f = 935 MHz 50 960 MHz 40 30 20 VCC = 26 V IQ = 200 mA 10 0 2 4 6 8 10 Pin, INPUT POWER (WATTS) 12 Pin = 10 W 60 50 7W 40 30 20 VCC = 26 V IQ = 200 mA 10 0 880 14 Figure 2. Output Power versus Input Power 900 920 940 960 f, FREQUENCY (MHz) 980 1000 Figure 3. Output Power versus Frequency 12 80 40 30 f = 960 MHz IQ = 200 mA 20 10 0 18 20 70 10 7W 50 η c , COLLECTOR EFFICIENCY (%) Pin = 10 W 60 Gp, POWER GAIN (dB) Po, OUTPUT POWER (WATTS) 70 22 24 26 28 VCC, SUPPLY VOLTAGE (VOLTS) Gp 8 60 ηc 50 6 40 VCC = 26 V IQ = 200 mA 30 4 880 32 Figure 4. Power Output versus Supply Voltage 900 920 940 960 980 f, FREQUENCY (MHz) 30 1000 Figure 5. Typical Broadband Circuit Performance 0 1 2 –5 3 5 ZIN f = 960 MHz 900 – 10 Pout = 45 W VCE = 26 V 900 f = 960 MHz ZOL* 10 10 Ω 20 30 – 20 20 f MHz ZIN OHMS ZOL* OHMS 850 900 950 — 2.8 + j6 3.95 + j3.55 — 4.1 + j5 3.7 + j5.2 ZOL* = Conjugate of the optimum load ZOL* = impedance. Into which the device ZOL* = operates at a given output power, ZOL* = voltage, and frequency. Figure 6. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA TP3061 3 ÂÂ ÂÂ ÂÂ ÂÂ ÂÂ TP3061 C1 IN ÂÂ ÂÂ ÂÂ ÂÂ L2 C6 C4 C5 R1 T1 Â Â Â Â Â 960 MHz C2 L3 OUT C12 C11 C10 R5 TP3061 R4 C8 C9 T2 R3 R2 C7 MR8923 Figure 7. Test Circuit — Component Locations TP3061 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS L N IDENTIFICATION NOTCH 4 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 6 –B– 1 K 2 3 Q 2 PL D 4 PL F 2 PL 0.13 (0.005) M T A M B M 2 PL J C H E –T– SEATING PLANE STYLE 2: PIN 1. 2. 3. 4. 5. 6. DIM A B C D E F H J K L N Q INCHES MIN MAX 0.965 0.985 0.390 0.410 0.250 0.290 0.075 0.090 0.095 0.115 0.110 0.130 0.155 0.175 0.004 0.006 0.090 0.116 0.725 BSC 0.415 0.435 0.120 0.135 MILLIMETERS MIN MAX 24.52 25.01 9.91 10.41 6.35 7.36 1.91 2.28 2.42 2.92 2.80 3.30 3.94 4.44 0.11 0.15 2.29 2.94 18.41 BSC 10.55 11.04 3.05 3.42 EMITTER BASE EMITTER EMITTER COLLECTOR EMITTER –A– CASE 333A–02 ISSUE C MOTOROLA RF DEVICE DATA TP3061 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. TP3061 6 ◊ *TP3061/D* MOTOROLA RF DEVICETP3061/D DATA