MOTOROLA MRF859

Order this document
by MRF859/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800 to 960 MHz.
• Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics
Output Power = 6.5 Watts CW
Minimum Power Gain = 11.5 dB
Minimum ITO = + 47 dBm
Typical Noise Figure = 6 dB
• Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800 to 960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.9 Adc and Rated Output Power
• Will Withstand RF Input Overdrive of 2 W CW
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit Board Photomaster Available by Ordering Document MRF859PHT/D
from Motorola Literature Distribution.
CLASS A
800 – 960 MHz
6.5 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 319–07, STYLE 2
MRF859
CASE 319A–02, STYLE 2
MRF859S
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
Vdc
Collector–Base Voltage
VCBO
55
Vdc
Emitter–Base Voltage
VEBO
4
Vdc
Total Device Dissipation @ TC = 60°C
Derate above 60°C
PD
34
0.24
Watts
W/°C
Operating Junction Temperature
TJ
200
°C
Tstg
– 65 to +150
°C
Symbol
Max
Unit
RθJC
3.9
°C/W
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance (TJ = 150°C, TC = 60°C)
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 25 mA, IB = 0)
V(BR)CEO
28
32
—
Vdc
Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0)
V(BR)CES
55
75
—
Vdc
Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0)
V(BR)CBO
55
75
—
Vdc
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0)
V(BR)EBO
4
5
—
Vdc
ICES
—
—
2
mA
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 15 V, IE = 0)
(continued)
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
REV 2
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1995
MRF859 MRF859S
1
ELECTRICAL CHARACTERISTICS — continued
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
20
60
120
—
Cob
13
—
26
pF
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.9 A, f = 840– 900 MHz, Pout = 6.5 W)
Pg
11.5
13
—
dB
Load Mismatch
(VCE = 24 V, IC = 0.9 A, f = 840 MHz, Pout = 6.5 W,
Load VSWR = 30:1, All Phase Angles)
ψ
ON CHARACTERISTICS
DC Current Gain
(IC = 1 A, VCE = 5 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
RF Input Overdrive
(VCE = 24 V, IC = 0.9 A, f = 840 MHz)
No degradation
No Degradation in
Output Power
Pin(over)
—
—
2
W
Third Order Intercept Point
(VCE = 24 V, IC = 0.9 A, f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = –40 dBc)
ITO
+ 47
+ 48
—
dBm
Noise Figure
(VCE = 24 V, IC = 0.9 A, f = 900 MHz)
NF
—
6
—
dB
Input Return Loss
(VCE = 24 V, IC = 0.9 A, f = 840– 900 MHz, Pout = 6.5 W)
IRL
—
—
–9
dB
Table 1. Common Emitter S–Parameters
S11
S21
S12
S22
VCE
(V)
IC
(A)
f
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
24
0.9
800
820
840
860
880
900
920
940
960
0.906
0.902
0.897
0.894
0.893
0.893
0.894
0.897
0.903
170
170
171
171
171
171
172
172
172
1.022
1.022
1.018
1.012
1.005
0.988
0.962
0.924
0.884
12
7
3
–3
–8
– 14
– 20
– 26
– 32
0.016
0.015
0.013
0.011
0.009
0.007
0.005
0.008
0.004
11
8
6
4
3
5
14
47
102
0.804
0.823
0.845
0.870
0.895
0.920
0.946
0.969
0.987
– 168
– 167
– 167
– 167
– 168
– 168
– 169
– 170
– 172
Table 2. Zin and ZOL* versus Frequency
f
(MHz)
840
870
900
Zin
(Ohms)
1.6
1.5
2.2
ZOL*
(Ohms)
3.3
3.6
3.5
2
1.6
1.7
– 4.1
– 3.3
– 2.7
VCE = 24 V, IC = 0.9 A, Po = 6.5 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
MRF859 MRF859S
2
MOTOROLA RF DEVICE DATA
+
F1
R8
R1
R2
VCE
V SUPPLY
C1
Q1
Q2
R3
R4
R5
R7
+
C2
C3
C4
L3
B1
R6
B2
C16
C7
+
C5
C6
L1
L2
TL1
DUT
C9
C8
TL4
C15
INPUT
TL5
OUTPUT
C12
C10
C11
TL2
C13
C14
0.880″
TL3
SB1
B1, B2
C1
C2, C5
C3, C6
C4
C7, C16
C8, C15
C9, C10
C11
C12, C13, C14
F1
L1, L2
L3
Q1
Q2
Ferrite Bead, Ferroxcube (56–390–65/3B)
250 µF, 50 Vdc, Electrolytic Capacitor
10 µF, 50 Vdc, Electrolytic Capacitor
0.1 µF, Chip Capacitor
1000 pF, Chip Capacitor
100 pF, Chip Capacitor
43 pF, 100 Mil Chip Capacitor
6.8 pF, Mini–Unelco
18 pF, Mini–Unelco
0.8 – 8.0 pF, Johanson Gigatrim
3 Amp Micro–Fuse
3 Turns, 18 AWG, 0.170″ ID
12 Turns, 22 AWG, 0.150″ ID (10 Ω 1/2 W Resistor)
MMBT2222ALT1, NPN Transistor
BD136, PNP Transistor
R1
R2
R3
R4
R5
R6
R7
R8
SB1
TL1, TL5
TL2
TL3
TL4
Board
V Supply
VCE
470 Ω, 1/4 W
500 Ω Potentiometer, 1/4 W
4.7K Ω, 1/4 W
2 x 4.7K Ω, 1/4 W
50 Ω, 2 W
75 Ω, 1/4 W
4.7 Ω, 1/4 W
4 Ω, 10 W
Copper Block 0.550″ x 0.180″ x 0.050″
50 Ω, Microstrip Transmission Line
Microstrip Transmission Line
Microstrip Transmission Line
Microstrip Transmission Line
0.030″ Glass–Teflon 2 oz. Cu, εr = 2.55
+ 27.6 Vdc ± 0.5 Vdc Due to Resistor Tolerance
+ 24 Vdc @ 0.9 A
Figure 1. MRF859 Class A RF Test Fixture Schematic
MOTOROLA RF DEVICE DATA
MRF859 MRF859S
3
TYPICAL CHARACTERISTICS
15
4
Gpe
3.5
3
14
VCC = 24 Vdc
IC = 900 mA
Pout = 6.5 W (CW)
13.5
2.5
2
13
VSWR in , INPUT VSWR
G pe , POWER GAIN (dB)
14.5
1.5
12.5
VSWR
12
830
840
850
860
870
880
f, FREQUENCY (MHz)
890
1
910
900
Figure 2. Performance in Broadband Circuit
15
Gpe
12
2500
14
VCC = 24 Vdc
IC = 900 mA
f = 870 MHz
8
12
11
6
Pout
4
10
IC (mAdc)
2000
13
10
G pe , POWER GAIN (dB)
Pout , OUTPUT POWER (WATTS)
14
1500
TJ = 150°C
Tf = 60°C
1000
500
9
2
0
8
0.2
0
1
1.2 1.4
0.6 0.8
Pin, INPUT POWER (WATTS)
0.4
1.6
1.8
0
2
0
2
4
6
Figure 3. Output Power & Power Gain versus
Input Power
10 12 14 16 18 20 22 24 26 28 30
VCE (Vdc)
Figure 4. DC SOA
2500
1500
TJ = 175°C
Tf = 60°C
1000
500
MTBF FACTOR (HOURS x AMPS2)
1.00E+09
2000
IC (mAdc)
8
1.02E+08
1.00E+08
2.09E+07
1.00E+07
5.00E+06
1.37E+06
1.00E+06
4.19E+05
1.42E+05
5.24E+04
1.00E+05
2.11E+04
1.00E+04
8.94E+03
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
VCE (Vdc)
Figure 5. DC SOA
MRF859 MRF859S
4
1.00E+03
100
120
140
160
180 200
220
TJ, JUNCTION TEMPERATURE (°C)
240
260
Figure 6. MTBF Factor versus
Junction Temperature
MOTOROLA RF DEVICE DATA
R3 R2 R1
Q1
C5 +
R5
R7
R6
C6
Q2
R8
R4
B2
C4
L3
B1
+ C2
C7
C16
C3
C1
L1
C9
L2
C8
C12
C15
C10
C11
C13
C14
SB1
MRF859
Figure 7. MRF859 Test Fixture Component Layout
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA RF DEVICE DATA
MRF859 MRF859S
5
PACKAGE DIMENSIONS
Q 2 PL
-AL
IDENTIFICATION
NOTCH
6
0.15 (0.006)
5
M
T A
M
N
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
-N1
2
3
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
K
F
D 2 PL
0.38 (0.015) M
B
0.38 (0.015)
T A
M
N
M
T A
M
M
N
M
INCHES
MIN
MAX
0.965 0.985
0.355 0.375
0.230 0.260
0.115 0.125
0.102 0.114
0.075 0.085
0.160 0.170
0.004 0.006
0.090 0.110
0.725 BSC
0.225 0.241
0.125 0.135
MILLIMETER
MIN
MAX
24.52 25.01
9.02
9.52
5.85
6.60
2.93
3.17
2.59
2.90
1.91
2.15
4.07
4.31
0.11
0.15
2.29
2.79
18.42 BSC
5.72
6.12
3.18
3.42
J
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
C
H
E
-T-
SEATING
PLANE
EMITTER (COMMON)
BASE (INPUT)
EMITTER (COMMON)
EMITTER (COMMON)
COLLECTOR (OUTPUT)
EMITTER (COMMON)
CASE 319–07
ISSUE M
MRF859
IDENTIFICATION
NOTCH
A
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
K
4
B
1
2
DIM
A
B
C
D
F
H
J
K
3
F
D
J
C
SEATING
PLANE
H
INCHES
MIN
MAX
0.355
0.365
0.225
0.235
0.110
0.125
0.115
0.125
0.075
0.085
0.035
0.045
0.004
0.006
0.090
0.110
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
MILLIMETERS
MIN
MAX
9.02
9.27
5.72
5.96
2.80
3.17
2.93
3.17
1.91
2.15
0.89
1.14
0.11
0.15
2.29
2.79
EMITTER
BASE
EMITTER
EMITTER
COLLECTOR
EMITTER
CASE 319A–02
ISSUE B
MRF859S
How to reach us:
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6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MRF859 MRF859S
6
◊
*MRF859/D*
MOTOROLA RF DEVICEMRF859/D
DATA