MOTOROLA MRF858S

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by MRF858/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800 – 960 MHz.
CLASS A
800 – 960 MHz
3.6 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
• Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics
Output Power = 3.6 Watts CW
Minimum Power Gain = 11 dB
Minimum ITO = + 44.5 dBm
Typical Noise Figure = 6 dB
• Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800– 960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power
• Will Withstand RF Input Overdrive of 0.85 W CW
CASE 319–07, STYLE 2
MRF858
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 319A–02, STYLE 2
MRF858S
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
Vdc
Collector–Base Voltage
VCBO
55
Vdc
Emitter–Base Voltage
VEBO
4
Vdc
Total Device Dissipation @ TC = 50°C
Derate above 50°C
PD
20
0.138
Watts
W/°C
Operating Junction Temperature
TJ
200
°C
Tstg
– 65 to +150
°C
Symbol
Max
Unit
RθJC
6.9
°C/W
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance (TJ = 150°C, TC = 50°C)
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)
V(BR)CEO
28
35
—
Vdc
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0)
V(BR)CES
55
85
—
Vdc
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0)
V(BR)CBO
55
85
—
Vdc
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0)
V(BR)EBO
4
5
—
Vdc
ICES
—
—
1
mA
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 24 V, IE = 0)
(continued)
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
REV 2
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1995
MRF858 MRF858S
1
ELECTRICAL CHARACTERISTICS — continued
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
30
60
120
—
Cob
—
6.5
8
pF
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.5 A, f = 840– 900 MHz,
Power Output = 3.6 W)
Pg
11
12
—
dB
Load Mismatch
(Po = 3.6 W)
(VCE = 24 V, IC = 0.5 A, f = 840 MHz,
Load VSWR = 30:1, All Phase Angles)
ψ
RF Input Overdrive
(VCE = 24 V, IC = 0.5 A, f = 840 MHz)
No degradation
Pin(over)
—
—
0.85
W
Third Order Intercept Point
(VCE = 24 V, IC = 0.5 A)
(f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = –40 dBc)
ITO
+ 44.5
+ 45.5
—
dBm
Noise Figure
(VCE = 24 V, IC = 0.5 A, f = 900 MHz)
NF
—
6
—
dB
Input Return Loss
(VCE = 24 V, IC = 0.5 A, f = 840– 900 MHz,
Power Output = 3.6 W)
IRL
—
– 12
–9
dB
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 A, VCE = 5 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
No Degradation in
Output Power
Table 1. MRF858 Common Emitter S–Parameters
S11
S21
S12
S22
VCE
(V)
IC
(A)
f
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
24
0.5
800
820
840
860
880
900
920
940
960
0.942
0.942
0.941
0.940
0.941
0.940
0.940
0.940
0.940
167
166
166
166
165
165
165
164
164
1.493
1.453
1.415
1.379
1.351
1.320
1.289
1.252
1.222
50
50
49
48
47
46
45
44
43
0.027
0.027
0.028
0.028
0.029
0.030
0.030
0.031
0.031
58
58
59
59
59
59
59
59
59
0.538
0.541
0.545
0.550
0.553
0.557
0.562
0.566
0.570
– 165
– 164
– 165
– 165
– 165
– 165
– 165
– 165
– 165
Table 2. Zin and ZOL* versus Frequency
f
(MHz)
840
870
900
Zin
(Ohms)
1.1
1.1
1.2
ZOL*
(Ohms)
2.9
3.5
3.5
9.9
9.5
9
– 14.4
– 14.6
– 14.5
VCE = 24 V, IC = 0.5 A, Po = 3.6 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
MRF858 MRF858S
2
MOTOROLA RF DEVICE DATA
+
VCE
R8
R1
R2
F1
V_SUPPLY
C1
Q1
Q2
R3
R4
L1
R5
R7
C15
+
C2
R6
L2
B1
C3
B2
C4
C7
+
C5
C16
L3
C6
L4
TL1
C9
C8
DUT
INPUT
C15
TL5
OUTPUT
TL4
C12
C10
C13
TL2
Short Ferrite Bead, Fair Rite (2743021447)
250 µF, 50 Vdc Electrolytic Capacitor
10 µF, 50 Vdc Electrolytic Capacitor
0.1 µF, Chip Capacitor
100 pF, Chip Capacitor
43 pF, 100 Mil Chip Capacitor
10 pF, Mini–Unelco
5 pF, Mini–Unelco
0.8 – 8.0 pF, Johanson Gigatrim
1000 pF, Chip Capacitor
1 A Micro–Fuse
10 Turns, 20 AWG, 0.150″ ID (10 Ω 1/2 W Resistor)
4 Turns, 16 AWG, 0.101″ ID
0.5″ 18 AWG Wire
MMBT2222ALT1, NPN Transistor
BD136, PNP Transistor
C14
0.685″
TL3
B1, B2
C1
C2, C5
C3, C6
C4, C7
C8, C15
C9, C10
C11
C12, C13, C14
C15, C16
F1
L1, L2
L3
L4
Q1
Q2
C11
R1
R2
R3
R4
R5
R6
R7
R8
TL1, TL5
TL2
TL3
TL4
V_Supply
VCE
Board
390 Ω, 1/4 W
500 Ω Potentiometer, 1/4 W
7.5K Ω, 1/4 W
2 x 4.7K Ω, 1/4 W
56 Ω, 2 W
75 Ω, 1/4 W
4.7 Ω, 1/4 W
4 Ω, 10 W
50 Ω, Microstrip Transmission Line
Microstrip Transmission Line
Microstrip Transmission Line
Microstrip Transmission Line
+ 26 Vdc ± 0.5 Vdc Due to Resistor Tolerance
+ 24 Vdc @ 0.5 A
0.030″ Glass–Teflon 2 oz. Cu, εr = 2.55
Figure 1. MRF858 Class A RF Test Fixture Schematic
MOTOROLA RF DEVICE DATA
MRF858 MRF858S
3
TYPICAL CHARACTERISTICS
13.5
4
3.5
Gpe
12.5
3
VCC = 24 Vdc
IC = 500 mA
Pout = 3.6 W (CW)
12
2.5
11.5
2
VSWR in , INPUT VSWR
G pe , POWER GAIN (dB)
13
1.5
11
VSWR
10.5
830
840
850
860
870
880
f, FREQUENCY (MHz)
890
1
910
900
Figure 2. Performance in Broadband Circuit
15
1
4
13
Gpe
5
VCC = 24 Vdc
IC = 500 mA
f = 870 MHz
4
1
2
11
3
Pout
2
10
1
9
0
8
0.1
0
0.2
0.3
0.4 0.5 0.6 0.7
Pin, INPUT POWER (WATTS)
0.8
0.9
1000
500
0
1
Tj = 150°C
Tf = 50°C
1500
IC (mAdc)
6
2000
G pe , POWER GAIN (dB)
Pout , OUTPUT POWER (WATTS)
7
2
0
4
6
Figure 3. Output Power & Power Gain versus
Input Power
10 12 14 16 18 20
VCE (Vdc)
22 24 26 28
Figure 4. DC SOA
1.00E+08
1000
900
Tj = 175°C
Tf = 50°C
800
700
600
50
00
2
4
6
8
10 12 14 16 18 20 22 24 26 28
VCE (Vdc)
Figure 5. DC SOA
(This device is MTBF limited for VCE < 20 Vdc.)
MRF858 MRF858S
4
MTBF FACTOR (HOURS x AMPS2)
1100
IC (mAdc)
8
1.72E+07
1.00E+07
3.58E+06
8.57E+05
1.00E+06
2.34E+05
7.17E+04
1.00E+05
2.43E+04
8.98E+03
1.00E+04
1.00E+03
100
120
3.59E+03
1.53E+03
140
160
180 200
220
240
260
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. MTBF Factor versus
Junction Temperature
MOTOROLA RF DEVICE DATA
R3 R2 R1
Q1
C5 +
R5
R7
R6
C6
Q1
R8
R4
B2
C15
+ C2
L2
B1
C4
C3
L1
C7
L3
C9
L4
C15
C16
C11
C8
C12
C11
C10
C14
C13
MRF858
Figure 7. MRF858 Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF858 MRF858S
5
PACKAGE DIMENSIONS
Q 2 PL
-AL
IDENTIFICATION
NOTCH
6
5
0.15 (0.006)
M
T A
M
N
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
-N1
2
3
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
K
F
D 2 PL
0.38 (0.015) M
B
0.38 (0.015)
T A
M
N
M
T A
M
N
M
M
J
C
H
E
-T-
SEATING
PLANE
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
INCHES
MIN
MAX
0.965 0.985
0.355 0.375
0.230 0.260
0.115 0.125
0.102 0.114
0.075 0.085
0.160 0.170
0.004 0.006
0.090 0.110
0.725 BSC
0.225 0.241
0.125 0.135
MILLIMETER
MIN
MAX
24.52 25.01
9.02
9.52
5.85
6.60
2.93
3.17
2.59
2.90
1.91
2.15
4.07
4.31
0.11
0.15
2.29
2.79
18.42 BSC
5.72
6.12
3.18
3.42
EMITTER (COMMON)
BASE (INPUT)
EMITTER (COMMON)
EMITTER (COMMON)
COLLECTOR (OUTPUT)
EMITTER (COMMON)
CASE 319–07
ISSUE M
MRF858
IDENTIFICATION
NOTCH
A
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
K
4
B
1
2
3
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
F
D
J
C
SEATING
PLANE
H
EMITTER
BASE
EMITTER
EMITTER
COLLECTOR
EMITTER
DIM
A
B
C
D
F
H
J
K
INCHES
MIN
MAX
0.355
0.365
0.225
0.235
0.110
0.125
0.115
0.125
0.075
0.085
0.035
0.045
0.004
0.006
0.090
0.110
MILLIMETERS
MIN
MAX
9.02
9.27
5.72
5.96
2.80
3.17
2.93
3.17
1.91
2.15
0.89
1.14
0.11
0.15
2.29
2.79
CASE 319A–02
ISSUE B
MRF858S
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: [email protected] – TOUCHTONE (602) 244–6609
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HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MRF858 MRF858S
6
◊
*MRF858/D*
MRF858/D
MOTOROLA RF DEVICE
DATA