Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (PEP) Power Gain = 11 dB Efficiency = 30% Intermodulation Distortion = –30 dBc • Specified Single–Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (CW) Power Gain = 11 dB Efficiency = 40% • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts (CW) Output Power • Gold Metallization for Improved Reliability 10 W, 2000 MHz, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 458–03, STYLE 1 (MRF282S) CASE 458A–01, STYLE 1 (MRF282Z) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS ± 20 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 60 0.34 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 2.9 °C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS — — 1.0 µAdc Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS — — 1.0 µAdc OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF282S MRF282Z 1 ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 µAdc) VGS(th) 2.0 3.0 4.0 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 0.5 Adc) VDS(on) — 0.4 0.6 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 0.5 Adc) gfs 0.5 0.7 — S Gate Quiescent Voltage (VDS = 26 Vdc, ID = 75 mAdc) VGS(q) 3.0 4.0 5.0 Vdc Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 15 — pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss — 8.0 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss — 0.45 — pF Common–Source Power Gain (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gps 11 12.6 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) η 30 34 — % Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD — –32.5 –30 dBc Input Return Loss (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 10 14 — dB Common–Source Power Gain (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 11 12.6 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) η — 30 — % Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD — –32.5 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL 10 14 — dB Common–Source Power Gain (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) Gps 11 12.3 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) η 40 45 — % Output Mismatch Stress (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1, All Phase Angles at Frequency of Test) Ψ ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MRF282S MRF282Z 2 No Degradation In Output Power MOTOROLA RF DEVICE DATA B4 B1 B2 B3 VGG C8 B5 B6 C10 VDD + + C3 C1 C5 R1 R2 R3 C9 C14 R5 R4 C11 C15 R6 C17 L3 Z7 L2 Z1 RF INPUT Z2 Z3 Z4 Z5 B1, B2, B3, B4, B5, B6 C1, C17 C2, C4, C12 C3, C15 C5, C14 C6, C8, C10, C13 C7 C9, C11 C16 L1 L2 L3 L4 L1 C6 C4 Z10 Z6 C12 C2 Z9 Z8 C7 Ferrite Bead, Ferroxcube, 56–590–65–3B 470 µF, Electrolytic Capacitor, Mallory 0.6–4.5 pF, Variable Capacitor, Johanson 0.1 µF, Chip Capacitor, Kemet 1000 pF, B Case Chip Capacitor, ATC 12 pF, B Case Chip Capacitor, ATC 1.8 pF, B Case Chip Capacitor, ATC 100 pF, B Case Chip Capacitor, ATC 0.4–2.5 pF, Variable Capacitor, Johanson Straight Wire, 21 AWG, 0.3″ 8 Turns, 0.042″ ID, 24 AWG, Enamel 9 Turns, 0.046″ ID, 26 AWG, Enamel 3 Turns, 0.048″ ID, 25 AWG, Enamel C13 L4 DUT R1, R2, R3, R4, R5, R6 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Board RF OUTPUT C16 12 Ω, 0.2 W Chip Resistor, Rohm 0.155″ x 0.08″ Microstrip 0.280″ x 0.08″ Microstrip 0.855″ x 0.08″ Microstrip 0.483″ x 0.08″ Microstrip 0.200″ x 0.330″ Microstrip 0.220″ x 0.330″ Microstrip 0.490″ x 0.330″ Microstrip 0.510″ x 0.08″ Microstrip 0.990″ x 0.08″ Microstrip 0.295″ x 0.08″ Microstrip 35 Mils Glass Teflon, Arlon GX–300, εr = 2.55 Input/Output Connectors Type N Flange Mount Figure 1. Schematic of 1.93 – 2.0 GHz Broadband Test Circuit MOTOROLA RF DEVICE DATA MRF282S MRF282Z 3 R1 + VGG (BIAS) – RF INPUT Z1 + C1 L2 L3, L4 L5 B1 C4 B2 C7 B3 C5 C8 C14 C11 R4 R5 R6 B5 C10 B4 C13 B6 DC SUPPLY + + VDD C16 – L1 Z2 C2 B1, B2, B3, B4, B5, B6 C1, C16 C2, C9, C12 C3 C4, C13 C5, C14 C6, C8, C11, C15 C7, C10 C17 L1 R3 R2 L2 Z3 Z4 C6 Z5 C3 L3 Z6 L4 DUT Z8 Z9 L5 Z10 Z11 RF OUTPUT Z7 C9 Ferrite Bead, Fair Rite, (2743021446) 470 µF, 63 V, Electrolytic Capacitor, Mallory 0.6–4.5 pF, Variable Capacitor, Johanson Gigatrim 0.8–4.5 pF, Variable Capacitor, Johanson Gigatrim 0.1 µF, Chip Capacitor 100 pF, B Case Chip Capacitor, ATC 12 pF, B Case Chip Capacitor, ATC 1000 pF, B Case Chip Capacitor, ATC 0.1 pF, B Case Chip Capacitor, ATC 3 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.053″ Long, 6.0 nH 5 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.091″ Long, 15 nH 9 Turns, 26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH 4 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.078″ Long, 10 nH C12 R1, R2, R3, R4, R5, R6 W1, W2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Board C15 C17 12 Ω, 1/8 W Fixed Film Chip Resistor, 0.08″ x 0.13″ Berrylium Copper, 0.010″ x 0.110″ x 0.210″ 0.122″ x 0.08″ Microstrip 0.650″ x 0.08″ Microstrip 0.160″ x 0.08″ Microstrip 0.030″ x 0.08″ Microstrip 0.045″ x 0.08″ Microstrip 0.291″ x 0.08″ Microstrip 0.483″ x 0.330″ Microstrip 0.414″ x 0.330″ Microstrip 0.392″ x 0.08″ Microstrip 0.070″ x 0.08″ Microstrip 1.110″ x 0.08″ Microstrip 1 = 0.03 Glass Teflon, Arlon GX–0300–55–22, 2 oz Copper, 3 x 5″ Dimenson, 0.030″, εr = 2.55 Figure 2. Schematic of 1.81 – 1.88 GHz Broadband Test Circuit MRF282S MRF282Z 4 MOTOROLA RF DEVICE DATA VGG + C1 R5 R1 R2 VDD Q1 Q2 R3 R4 B2 B1 R6 C13 + R7 C2 C4 C5 B3 C6 C8 R8 C9 + R9 C14 R10 C16 C18 VDD C20 L2 L1 RF INPUT Z1 Z3 Z5 Z6 C7 C10 Ferrite Bead, Ferroxcube, 56–590–65–3B 470 µF, 63 V, Electrolytic Capacitor, Mallory 0.01 µF, B Case Chip Capacitor, ATC 0.6–4.5 pF, Variable Capacitor, Johanson 0.02 µF, B Case Chip Capacitor, ATC 100 µF, 50 V, Electrolytic Capacitor, Sprague 12 pF, B Case Chip Capacitor, ATC 51 pF, B Case Chip Capacitor, ATC 0.3 pF, B Case Chip Capacitor, ATC 0.1 µF, Chip Capacitor, Kemet 0.4–2.5 pF, Variable Capacitor, Johanson 8 Turns, 0.042″ ID, 24 AWG, Enamel 9 Turns, 0.046″ ID, 26 AWG, Enamel NPN, 15 W, Bipolar Transistor, MJD310 PNP, 15 W, Bipolar Transistor, MJD320 200 Ω, Axial, 1/4 W Resistor Z8 Z7 Z9 Z4 C15 C3 B1, B2, B3, C1, C20 C2 C3, C10, C15 C4, C16 C5 C6, C7, C9, C14, C17 C8, C13 C11, C12 C18 C19 L1 L2 Q1 Q2 R1 Z2 DUT C11 C17 RF OUTPUT C19 C12 R2 R3 R4, R6, R7 R5 R8, R9, R10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Board Input/Output 1.0 kΩ, 1/2 W Potentiometer 13 kΩ, Axial, 1/4 W Resistor 390 Ω, 1/8 W Chip Resistor, Rohm 1.0 Ω, 10 W 1% Resistor, DALE 12 Ω, 1/8 W Chip Resistor, Rohm 0.624″ x 0.08″ Microstrip 0.725″ x 0.08″ Microstrip 0.455″ x 0.08″ Microstrip 0.530″ x 0.330″ Microstrip 0.280″ x 0.330″ Microstrip 0.212″ x 0.330″ Microstrip 0.408″ x 0.08″ Microstrip 0.990″ x 0.08″ Microstrip 0.295″ x 0.08″ Microstrip 35 Mils Glass Teflon, Arlon GX–0300, εr = 2.55 Type N Flange Mount RF55–22, Connectors, Omni Spectra Figure 3. Schematic of Class A Test Circuit MOTOROLA RF DEVICE DATA MRF282S MRF282Z 5 TYPICAL CHARACTERISTICS 14 14 Pout 12 13 10 G ps , GAIN (dB) Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 14 0.8 W 12 10 8 12 Gps 6 4 11 VDD = 26 Vdc IDQ = 75 mA f = 2000 MHz Single Tone 2 0 0.0 8 Pin = 0.2 W 6 4 1800 10 1.0 0.25 0.75 0.5 Pin, INPUT POWER (WATTS) 0.5 W 1850 – 10 13 VDD = 26 Vdc I = 75 mA – 20 DQ f1 = 2000.0 MHz f2 = 2000.1 MHz – 30 12 3rd Order – 50 Gps –20 –25 10 –30 9 1.0 Pout, OUTPUT POWER (WATTS) PEP 8 16 10 18 –35 20 22 24 VDD, DRAIN SUPPLY VOLTAGE (Vdc) 26 –40 28 Figure 7. Power Gain and Intermodulation Distortion versus Supply Voltage 14 – 10 VDD = 26 Vdc f1 = 2000.0 MHz – 20 f2 = 2000.1 MHz IDQ = 125 mA G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) IMD Pout = 10 W (PEP) IDQ = 75 mA f1 = 2000.0 MHz f2 = 2000.1 MHz Figure 6. Intermodulation Distortion versus Output Power 25 mA – 30 50 mA – 40 2000 –15 7th Order – 70 0.1 1950 11 5th Order – 60 1900 f, FREQUENCY (MHz) Figure 5. Output Power versus Frequency G ps , GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Output Power & Power Gain versus Input Power – 40 VDD = 26 Vdc IDQ = 75 mA Single Tone IMD, INTERMODULATION DISTORTION (dBc) 16 100 mA IDQ = 125 mA – 50 75 mA 13 100 mA 12 75 mA 50 mA 11 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 10 25 mA – 60 0.1 1.0 10 9 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 8. Intermodulation Distortion versus Output Power Figure 9. Power Gain versus Output Power MRF282S MRF282Z 6 MOTOROLA RF DEVICE DATA 100 Tflange = 75°C 1.5 C, CAPACITANCE (pF) Tflange = 100°C 1 .5 Ciss 10 Coss 1.0 Crss TJ = 175°C 0.1 0 4 8 12 16 20 VDD, DRAIN SUPPLY VOLTAGE (Vdc) 24 0 28 4 Figure 10. Class A DC Safe Operating Area 14 FUNDAMENTAL G ps , GAIN (dB) 30 20 10 3rd Order 0 –10 VDD = 26 Vdc ID = 600 mAdc f1 = 2000.0 MHz f2 = 2000.1 MHz – 20 – 30 10 20 30 Pin, INPUT POWER (dBm) Gps 13 38 12 37 η 36 VSWR 40 Figure 12. Class A Third Order Intercept Point 39 Pout = 10 W (PEP) VDD = 26 Vdc IDQ = 75 mA 11 – 40 10 1930 1940 1950 1970 1960 1980 f, FREQUENCY MHz) 1990 35 2000 1.6:1 1.4:1 1.2:1 Figure 13. Performance in Broadband Circuit 1.E+09 MTBF FACTOR (HOURS x AMPS 2 ) Pout , OUTPUT POWER (dBm) TOI POINT 40 28 Figure 11. Capacitance versus Drain Source Voltage 60 50 12 20 24 8 16 VDS, DRAIN SOURCE VOLTAGE (VOLTS) COLLECTOR EFFICIENCY (%) 0 INPUT VSWR ID, DRAIN CURRENT (Adc) 2 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 0 50 100 150 200 250 TJ, JUNCTION TEMPERATURE (°C) This graph displays calculated MTBF in hours x ampere2 drain curent. Life tests at elevated temperature have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. Figure 14. MTBF Factor versus Junction Temperature MOTOROLA RF DEVICE DATA MRF282S MRF282Z 7 + j1 + j0.5 + j2 + j3 Zin + j0.2 Zo = 5 Ω + j5 2 GHz + j10 f = 1.8 GHz 0.2 0.0 ZOL* 2 GHz 0.5 1 2 3 5 1.8 GHz – j10 – j5 – j0.2 – j3 – j2 – j0.5 – j1 VCC = 26 V, ICQ = 75 mA, Pout = 10 W (PEP) f MHz Zin(1) Ω ZOL* Ω 1800 2.1 + j1.0 3.8 – j0.15 1860 2.05 + j1.15 3.77 – j0.13 1900 2.0 + j1.2 3.75 – j0.1 1960 1.9 + j1.4 3.65 + j0.1 2000 1.85 + j1.6 3.55 + j0.2 Zin(1)= Conjugate of fixture gate terminal impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. Figure 15. Series Equivalent Input and Output Impedence MRF282S MRF282Z 8 MOTOROLA RF DEVICE DATA Table 1. Common Source S–Parameters at VDS = 24 Vdc, ID = 600 mAdc f GHz GH S11 S21 S12 S22 |S11| ∠f |S21| ∠f |S12| ∠f |S22| ∠f 0.1 0.916 -81 33.41 128 0.016 41 0.498 -60 0.2 0.850 -118 20.81 101 0.020 16 0.499 -88 0.3 0.843 -135 14.45 84 0.020 2 0.532 -106 0.4 0.848 -144 10.61 73 0.019 -7 0.552 -117 0.5 0.861 -151 8.34 63 0.017 -15 0.609 -125 0.6 0.872 -154 6.61 55 0.015 -19 0.647 -132 0.7 0.882 -158 5.43 47 0.013 -23 0.675 -139 0.8 0.895 -160 4.54 41 0.011 -24 0.728 -145 0.9 0.901 -163 3.82 34 0.009 -24 0.740 -150 1.0 0.902 -164 3.27 29 0.008 -18 0.773 -160 1.1 0.909 -166 2.83 24 0.006 -6 0.794 -164 1.2 0.917 -168 2.48 19 0.006 10 0.813 -168 1.3 0.923 -169 2.18 14 0.006 14 0.826 -172 1.4 0.931 -171 1.94 10 0.006 15 0.842 -176 1.5 0.933 -172 1.73 6 0.005 43 0.853 -179 1.6 0.934 -174 1.55 2 0.007 60 0.859 177 1.7 0.937 -175 1.40 -1 0.009 60 0.869 174 1.8 0.938 -176 1.27 -4 0.010 63 0.869 171 1.9 0.942 -177 1.16 -7 0.011 71 0.874 169 2.0 0.943 -178 1.06 -10 0.014 73 0.876 166 2.1 0.946 -178 0.98 -12 0.016 71 0.884 163 2.2 0.950 -179 0.92 -15 0.019 67 0.897 160 2.3 0.953 -180 0.86 -18 0.019 63 0.903 157 2.4 0.954 179 0.80 -21 0.020 62 0.907 154 2.5 0.955 178 0.76 -24 0.020 65 0.907 151 2.6 0.961 177 0.71 -26 0.024 69 0.912 149 MOTOROLA RF DEVICE DATA MRF282S MRF282Z 9 PACKAGE DIMENSIONS A 1 U 4 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 P B W 4 PL DIM A B C D E H J K N P U V W K 2 PL V 4 PL 2 D 2 PL E C INCHES MIN MAX 0.197 0.203 0.157 0.163 0.085 0.110 0.047 0.053 0.006 0.010 0.025 0.031 0.006 0.010 0.060 0.100 0.177 0.183 0.137 0.143 0.000 0.005 0.030 0.040 0.017 0.023 MILLIMETERS MIN MAX 5.00 5.16 3.99 4.14 2.16 2.79 1.19 1.35 0.15 0.25 0.64 0.79 0.15 0.25 1.52 2.54 4.50 4.65 3.48 3.63 0.00 0.13 0.76 1.02 0.43 0.58 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE J H N CASE 458–03 ISSUE C (MRF282S) J A U 4 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION –H– (PACKAGE COPLANARITY): THE BOTTOM OF THE LEADS AND REFERENCE PLANE –T– MUST BE COPLANAR WITHIN DIMENSION –H–. S 1 Y 3 P B W 4 PL V 4 PL 2 K 2 PL D 2 PL E C H DIM A B C D E H J K N P S U V W Y INCHES MIN MAX 0.197 0.203 0.157 0.163 0.085 0.110 0.047 0.053 0.006 0.010 0.000 0.004 0.006 0.010 0.050 0.080 0.177 0.183 0.137 0.143 0.020 0.040 0.000 0.005 0.030 0.040 0.017 0.023 0.030 0.040 MILLIMETERS MIN MAX 5.00 5.16 3.99 4.14 2.16 2.79 1.19 1.35 0.15 0.25 0.00 0.10 0.15 0.25 1.27 2.03 4.50 4.65 3.48 3.63 0.51 1.02 0.00 0.13 0.76 1.02 0.43 0.58 0.76 1.02 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE N CASE 458A–01 ISSUE O (MRF282Z) MRF282S MRF282Z 10 MOTOROLA RF DEVICE DATA Motorola reserves the right to make changes without further notice to any products herein. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MOTOROLA RF DEVICE DATA MRF282/D MRF282S MRF282Z 11