Order this document by MJE1320/D SEMICONDUCTOR TECHNICAL DATA Switchmode Series This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for line–operated switchmode applications. POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS Typical Applications: • Fluorescent Lamp Ballasts • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits Features: • High VCEV Capability (1800 Volts) • Low Saturation Voltage • 100_C Performance Specified for: Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents CASE 221A–06 TO–220AB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO(sus) 900 Vdc Collector–Emitter Voltage VCEV 1800 Vdc Emitter Base Voltage VEB 9 Vdc Collector Current — Continuous Peak(1) IC ICM 2 5 Adc Base Current — Continuous Peak(1) IB IBM 1.5 2.5 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C PD 80 32 0.64 Watts TJ, Tstg – 65 to + 150 _C Symbol Max Unit RθJC 1.56 _C/W TL 275 _C Operating and Storage Junction Temperature Range W/_C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. SWITCHMODE is a trademark of Motorola, Inc. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJE1320 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 900 — — Vdc — — — — 0.25 2.5 — — 0.25 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 50 mA, IB = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV Emitter Cutoff Current (VEB = 9 Vdc, IC = 0) IEBO mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 13 RBSOA See Figure 14 ON CHARACTERISTICS(1) DC Current Gain (VCE = 5 Vdc) IC = 2 Adc IC = 1 Adc hFE 2.5 3 4.5 7 — — — — — 0.18 0.3 0.3 1 2.5 1.5 — — — 0.2 0.9 0.15 1.5 2.8 1.5 Cob — 80 — pF td — 0.1 — µs Collector–Emitter Saturation Voltage (IC = 1 Adc, IB = 0.5 Adc) (IC = 2 Adc, IB = 1 Adc) (IC = 1 Adc, IB = 0.5 Adc, TC = 100_C) VCE(sat) Base–Emitter Saturation Voltage (IC = 1 Adc, IB = 0.5 Adc) (IC = 2 Adc, IB = 1 Adc) (IC = 1 Adc, IB = 0.5 Adc, TC = 100_C) VBE(sat) — — Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time VCC = 250 Vdc, IC = 1 A IB1 = IB2 = 0.5 Adc 2% tp = 25 µs, Duty Cycle Fall Time tr — 0.8 — µs ts — 4 — µs tf — 0.8 — µs tsv — 2.8 — µs tc — 2.2 — µs tsv — 3.7 10.5 µs tc — 3.5 10 µs Inductive Load, Clamped (Table 2) Storage Time TC = 25_C Crossover Time Storage Time IC = 1 A, Vclamp = 400 Vdc, VBE(off) = 2 Vdc, IB1 = 0.5 Adc Crossover Time TC = 100_C Fall Time (1) Pulse Test: Pulse Width = 300 µs. Duty Cycle 2 2%. Motorola Bipolar Power Transistor Device Data MJE1320 TYPICAL STATIC CHARACTERISTICS 30 20 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 100 70 50 VCE = 5 V TC = 100°C 25°C 10 7 5 3 2 1 0.05 0.07 0.1 2 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMPS) 5 3 2.8 2.4 1.6 1.2 0.8 TJ = 25°C 0.4 0 0.1 0.2 0.3 2 5 7 10 2 2.5 1.3 1.6 VBE, BASE–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 0.5 0.7 1 2 IB, BASE CURRENT (AMP) Figure 2. Collector Saturation Region Figure 1. DC Current Gain IC/IB = 2 1.2 0.8 TJ = 100°C 0.4 25°C 0 0.25 0.3 0.4 0.5 0.7 1 1.5 1.1 IC/IB = 2 TJ = 25°C 0.9 0.7 100°C 0.5 0.3 0.25 0.3 2.5 2 0.4 0.5 0.7 1 1.5 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Voltage Figure 4. Base–Emitter Saturation Voltage 10K 1K 100 10K VCE = 250 V 5K TJ = 150°C 3K 2K C, CAPACITANCE (pF) IC, COLLECTOR CURRENT ( µ A) 2 A 2.5 A IC = 1 A 2 125°C 100°C 75°C 10 25°C 1 REVERSE 0.1 – 0.4 FORWARD 0 – 0.2 + 0.2 + 0.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Motorola Bipolar Power Transistor Device Data + 0.6 f = 1 MHz TJ = 25°C Cib 1K 500 300 200 Cob 100 50 30 20 10 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 VR, REVERSE VOLTAGE (VOLTS) 500 1K 2K Figure 6. Capacitance Variation 3 MJE1320 TYPICAL DYNAMIC CHARACTERISTICS 10 IC pk VCE(pk) tsv trv 90% IC(pk) tfi tc 10% VCE(pk) VCE IB 90% IB1 tti 10% IC pk 5 t SV, STORAGE TIME (µs) 90% VCE(pk) IC VBE(off) = 1 V 7 2% IC 2V 3 3V 2 TJ = 100°C IC/IB1 = 2 1 0.7 0.5 0.3 TIME 0.5 Figure 7. Inductive Switching Measurements 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) 5 6 5 6 Figure 8. Inductive Storage Time 6 5 6 5 2V 2 1V 3 t fi , FALL TIME ( µs) TC, CROSSOVER TIME ( µ s) VBE(off) = 3 V 3 1 0.7 0.5 VBE(off) = 3 V 2V 2 1V 1 0.7 0.5 0.3 0.3 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) 5 6 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) Figure 10. Inductive Fall Time Figure 9. Inductive Crossover Time Table 1. Resistive Load Switching td and tr 0V 20 100 2N6191 ≈ – 35 V H.P. 214 OR EQUIV. P.G. 10 µF *IC *IB T.U.T. RB = 22 Ω RL + H.P. 214 OR EQUIV. P.G. VCC 50 ≈ 11 V 0V tr ≤ 15 ns *Tektronix AM503 *P6302 or Equivalent RB1 0.02 µF A RB2 0.02 µF 2N5337 50 500 Vin + Vdc ≈ 11 Vdc ts and tf 1 µF 100 –V VCC = 250 Vdc RL = 250 Ω IC = 1 Adc IB = 0.5 Adc 0V +V –5 V T.U.T. A RL *IC 50 *IB VCC VCC = 250 Vdc IB1 = 0.5 Adc RB1 = 22 Ω RL = 250 Ω IB2 = 0.5 Adc RB2 = 10 Ω IC = 1 Adc For VBE(off) = 5 V RB2 = 0 Ω Note: Adjust – V to obtain desired VBE(off) at Point A. 4 Motorola Bipolar Power Transistor Device Data MJE1320 Table 2. Inductive Load Switching 0.02 µF H.P. 214 OR EQUIV. P.G. + V ≈ 11 V 100 2N6191 20 + 0 – 10 µF RB1 ≈ – 35 V A 0.02 µF RB2 1 µF + – 50 2N5337 100 500 IC(pk) –V T1 +V IC 0V *IC –V [ VCE T.U.T. A T1 VCE(pk) L MR856 Lcoil (ICpk) VCC *IB 50 Vclamp IB1 VCC T1 adjusted to obtain IC(pk) IB V(BR)CEO L = 10 mH RB2 = VCC = 20 Volts Inductive Switching L = 1.1 mH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 RBSOA L = 1.1 mH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 *Tektronix *P–6042 or *Equivalent Scope — Tektronix 7403 or Equivalent Note: Adjust – V to obtain desired VBE(off) at Point A. R IB2 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 11. T J(pk) may be calculated from the data in Figure 14. At high case temperatures, thermal limitations will reduce the Motorola Bipolar Power Transistor Device Data power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base–to–emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the RBSOA characteristics. 5 MJE1320 GUARANTEED SAFE OPERATING AREA 10 IC, COLLECTOR CURRENT (AMPS) POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 10 µs 5 2 5 ms 1 dc 0.5 TC = 25°C 0.2 0.1 WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.05 0.02 0 20 0.01 60 40 80 100 140 120 1 160 TC, CASE TEMPERATURE (°C) 900 100 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 12. Maximum Rated Forward Bias Safe Operating Area Figure 11. Power Derating IC, COLLECTOR CURRENT (AMPS) 5 4 IC/IB = 1 TJ ≤ 100°C VBE(off) = 2 V 3 2 IC/IB = 2 1 0 0 600 900 1200 1500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1800 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 13. Maximum Rated Reverse Bias Safe Operating Area 1 D = 0.5 0.2 0.1 0.1 0.05 ZθJC(t) = r(t) RθJC RθJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) ZθJC 0.02 0.01 0.01 0.01 SINGLE PULSE 0.1 1 10 t, TIME (ms) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 Figure 14. Thermal Response 6 Motorola Bipolar Power Transistor Device Data 1K MJE1320 PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 7 MJE1320 Motorola reserves the right to make changes without further notice to any products herein. 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