Order this document by BUT33/D SEMICONDUCTOR TECHNICAL DATA !" %! !# !""#!" %# "##! $ 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications such as: • • • • • AC and DC Motor Controls Switching Regulators Inverters Solenoid and Relay Drivers Fast Turn Off Times 800 ns Inductive Fall Time at 25_C (Typ) 2.0 µs Inductive Storage Time at 25_C (Typ) • Operating Temperature Range –65 to 200_C CASE 197A–05 TO–204AE (TO–3) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ x ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ≈ 100 ≈ 16 MAXIMUM RATINGS Rating Symbol BUT33 Unit Collector–Emitter Voltage VCEO(sus) 400 Vdc Collector–Emitter Voltage VCEV 600 Vdc Emitter Base Voltage VEB 10 Vdc Collector Current — Continuous Collector Current — Peak (1) IC ICM 56 75 Adc Base Current — Continuous Base Current — Peak (1) IB IBM 12 15 Adc Free Wheel Diode Forward Current — Continuous Free Wheel Diode Forward Current — Peak IF IFM 56 75 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C PD 250 140 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200 _C Symbol Max Unit RθJC 0.7 _C/W TL 275 _C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purpose 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BUT33 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 — — Vdc — — — — 0.2 4.0 — — 350 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV Emitter Cutoff Current (VEB = 20 V, IC = 0) IEBO mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 16 RBSOA See Figure 17 ON CHARACTERISTICS (1) DC Current Gain (IC = 20 A, VCE = 5 V) (IC = 36 A, VCE = 5 V) hFE 30 20 — — — — — — — — — — — — 2.0 2.5 3.0 5.0 — — — — — — 2.5 2.9 3.3 Vf — — 4.0 Vdc IC = 36 A ts — 2.0 3.3 µs IB = 3.6 A tf — 0.8 1.6 µs ts — 2.2 — µs tf — 0.8 — µs Collector–Emitter Saturation Voltage (IC = 20 A, IB = 1 A) (IC = 36 A, IB = 3.6 A) (IC = 44 A, IB = 4.4 A) (IC = 56 A, IB = 11.2 A) VCE(sat) Base–Emitter Saturation Voltage (IC = 20 A, IB = 1 A) (IC = 36 A, IB = 3.6 A) (IC = 44 A, IB = 4.4 A) VBE(sat) Diode Forward Voltage (IF = 44 A) Vdc Vdc SWITCHING CHARACTERISTICS Inductive Load Clamped (Table 1) Storage Time TC = 25_C Fall Time Storage Time Fall Time See Table 1 TC = 100_C (1) Pulse Test: PW = 300 µs, Duty Cycle 2 VBE(off) = 5 V 2%. Motorola Bipolar Power Transistor Device Data BUT33 TYPICAL CHARACTERISTICS VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 400 hFE , DC CURRENT GAIN 200 100 50 30 20 10 5 TC = 25°C VCE = 5.0 V 3 2 1 1 2 3 4 6 10 20 IC, COLLECTOR CURRENT (AMPS) 30 40 60 4 3 IC = 40 A 2 IC = 20 A 1 TC = 25°C 0 0.1 VBE, BASE–EMITTER VOLTAGE (VOLTS) 2.2 1.9 1.6 1.3 1.0 0.7 0.4 1 2 3 5 7 10 20 5 10 30 50 TC = 25°C IC/IB = 10 3.2 2.8 2.5 2.2 1.9 1.6 1.3 1.0 1 2 3 5 7 10 20 30 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Voltage Figure 4. Base–Emitter Voltage 1 0.7 0.5 7 Figure 2. Collector Saturation Region TC = 25°C IC/IB = 10 2.5 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 2 3 0.5 1 IB, BASE CURRENT (AMPS) 0.2 0.3 50 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.01 0.03 0.02 0.01 0.01 SINGLE PULSE 0.02 0.03 0.05 P(pk) RθJC(t) = r(t) RθJC RθJC(t) = 1.17°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 Figure 5. Thermal Response Motorola Bipolar Power Transistor Device Data 3 BUT33 Table 1. Test Conditions for Dynamic Performance VCEO(sus) RBSOA AND INDUCTIVE SWITCHING INPUT CONDITIONS 20 Ω 33 2W 1 5V 220 0 +10 V 22 µF 160 2N6438 D3 MR854 100 22 680 pF 2 Ib1 ADJUST D1 D2 D3 D4 1N4934 CIRCUIT VALUES 680 pF PULSES δ = 3% 2N3763 TEST CIRCUITS D3 TUT t1 Adjusted to Obtain IC t1 VCE VCC RS = 0.1 Ω tf VCEM TIME 15 10 tf Clamped t ICM Lcoil Vclamp – AV up to 50 V OUTPUT WAVEFORMS Rcoil 1N4937 OR EQUIVALENT 2 5 4 3 1 40°C t2 (ICM) [ Lcoil Vclamp 0.5 CRONETICS PG130 up to 50 V 5 µs 1% tS 10 V 1 VBE(off) = 5 V 0.5 IC = 25 A 1 2 3 4 5 Ib2/Ib1 VBE(off) = 5 V 0.2 6 7 8 9 0.1 10 10 V 1 2 3 5 7 10 20 IC, COLLECTOR CURRENT (AMPS) 50 10 8 8 TC = 25°C IC/IB = 5 IC = 25 A 6 t, TIME ( µs) 6 t, TIME ( µs) 30 Figure 7. Turn–Off Time versus IC 10 5 4 IC = 50 A IC = 25 A 5 4 3 3 4 IC/IB = 10 tF Figure 6. Fall Time versus IB2/IB1 1 ID 0.3 0.3 0.2 2 VD 510 TC = 25°C IC/IB = 20 σ tF = 200 ns IC = 20 A σ t = 400 ns S 2 IC = 50 A [ LcoilVCC(ICM) Test Equipment Scope — Tektronix 475 or Equivalent t t2 t, TIME ( µs) 5 t1 Vclamp TC = 25°C IC/IB = 5 3 2 2N6339 22 µF IC 1 ID VCC INDUCTIVE TEST CIRCUIT INPUT SEE ABOVE FOR DETAILED CONDITIONS D4 VD DRIVER Ib2 ADJUST dTb ADJUST dT MR854 160 33 2W Lcoil = 180 µH Rcoil = 0.05 Ω VCC = 10 V 1 µF 22 100 680 pF Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Ω Vclamp = VCEO(sus) 0.1 + MM3735 PW Varied to Attain IC = 100 mA t, TIME ( µs) D1 TEST CIRCUIT for FREE–WHEEL DIODE TC = 25°C VBE(off) = 5 V 1 2 3 2 4 5 6 7 8 9 10 1 IC = 50 A IC = 10 A 1 2 3 4 5 6 7 8 βf, FORCED GAIN Ib2/Ib1 Figure 8. Storage Time versus Forced Gain Figure 9. Storage Time versus Ib2/Ib1 9 Motorola Bipolar Power Transistor Device Data 10 BUT33 FREE–WHEEL DIODE CHARACTERISTICS 50 I IE , EMITTER CURRENT (AMPS) IFM 25 IRM t Id IRM 1 0 VD trr DYN –σ di/dt = 25 A/µs 10 (VDYN VFM) VFM +σ 40 30 20 10 TC = 25°C TFR 0 0 1 2 3 4 VEC, EMITTER COLLECTOR VOLTAGE (VOLTS) Figure 11. Forward Voltage 30 25 20 15 10 5 0 40°C 0 10 TC = 25°C 20 30 IE, EMITTER CURRENT (AMPS) 40 50 I RM , PEAK REVERSE RECOVERY CURRENT (AMPS) Vdyn , FORWARD MODULATION VOLTAGE (VOLTS) Figure 10. Free Wheel Diode Measurements 5 50 TC = 25°C 40 30 20 10 0 0 Figure 12. Forward Modulation Voltage 10 20 30 IE, EMITTER CURREMT (AMPS) 40 50 Figure 13. Peak Reverse Recovery Current 2.2 TRR, REVERSE RECOVERY TIME ( µs) TFR , FORWARD RECOVERY TIME ( µs) 15 TC = 25°C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 IE, EMITTER CURRENT (AMPS) 40 Figure 14. Forward Recovery Time Motorola Bipolar Power Transistor Device Data 50 10 TC = 25°C 7 5 3 2 1 0.7 0.5 0.3 0 10 20 30 IE, EMITTER CURRENT (AMPS) 40 50 Figure 15. Reverse Recovery Time 5 BUT33 The Safe Operating Area figures shown in Figures 16 and 17 are specified for the devices under the test conditiond shown. SAFE OPERATING AREA INFORMATION FORWARD BIAS IC, COLLECTOR CURRENT (AMPS) 60 10 µs 100 µs 30 1 ms 10 DC 3.0 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subject to greater dissipation than the curves indicate. The data of Figure 16 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 16 may be found at any case temperature by using the appropriate curve on Figure 18. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. y 0.5 0.3 TC = 25°C 0.1 1 300 5 10 30 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1000 Figure 16. Safe Operating Area ICM , PEAK COLLECTOR CURRENT (AMPS) REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode Figure 17 gives the RBSOA characteristics. 60 40 20 VBE(off) = 5 V TC = 25°C IC/IB = 10 0 0 200 400 600 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 17. Reverse Bias Safe Operating Area POWER DERATING (FACTOR) 100 80 SECOND BREAKDOWN DERATING 60 THERMAL DERATING 40 20 0 0 40 80 120 IC, CASE TEMPERATURE (°C) 160 200 Figure 18. Power Derating 6 Motorola Bipolar Power Transistor Device Data BUT33 PACKAGE DIMENSIONS A N C –T– E D K 2 PL 0.30 (0.012) U V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE T Q M M Y M –Y– L 2 H G B M T Y 1 –Q– 0.25 (0.010) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A–05 TO–204AE (TO–3) ISSUE J Motorola Bipolar Power Transistor Device Data 7 BUT33 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Bipolar Power Transistor Device Data *BUT33/D* BUT33/D