FAIRCHILD KSD1273

KSD1273
KSD1273
High hFE, AF Power Amplifier
• ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires
no Insulator.
TO-220F
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
80
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
3
A
ICP
Collector Current (Pulse)
6
A
IB
Base Current
1
A
PC
Collector Dissipation (Ta=25°C)
2
W
PC
Collector Dissipation (TC=25°C)
40
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
60
V
6
V
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Voltage
Test Condition
IC = 25mA, IB = 0
Min.
60
Typ.
Max.
Units
V
ICBO
Collector Cut-off Current
VCB = 80V, IE = 0
100
µA
ICEO
Collector Cut-off Current
VCE = 60V, IB = 0
100
µA
IEBO
Emitter Cut-off Current
VEB = 6V, IC = 0
100
µA
hFE
DC Current Gain
VCE = 4V, IC = 0.5A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.05A
fT
Current Gain Bandwidth Product
VCE = 12V, IC = 0.2A
500
2500
1
V
30
MHz
hFE Classification
Classification
Q
P
O
hFE
500 ~ 1000
800 ~ 1500
1200 ~ 2500
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSD1273
Typical Characteristics
2.0
10000
VCE = 4V
1.6
IB = 1.2mA
1.4
IB = 1mA
1.2
IB = 800uA
1.0
hFE, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
1.8
IB = 600uA
0.8
IB = 400uA
0.6
IB = 200uA
0.4
1000
100
0.2
0.0
0
1
2
3
4
5
6
7
8
9
10
0.01
10
Figure 1. Static Characteristic
VCE(sat)[mV], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
10
10000
VCE = 4V
1000
O
25 C
O
75 C
O
125 C
100
10
0.01
0.1
1
IC = 50 IB
o
125 C
o
100
10
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC = 50 IB
o
25 C
o
75 C
o
125 C
100
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Base Saturation Voltage
©2001 Fairchild Semiconductor Corporation
1
10
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
10
0.01
0.1
Ic[A], COLLECTOR CURRENT
Figure 3. DC current Gain
V BE(sat)
o
25 C
1
0.01
10
75 C
1000
IC[A], COLLECTOR CURRENT
VBE(sat)[mV], SATURATION VOLTAGE
1
Figure 2. DC current Gain
10000
1000
0.1
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
10
IC = 40 IB
1
V BE(sat)
0.1
V CE(sat)
0.01
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 6. Base-Emitter Saturation Voltage
Rev. A1, June 2001
KSD1273
1000
Cob[pF], CAPACITANCE
f = 1MHz
100
10
1
1
10
100
1000
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
Typical Characteristics (Continued)
1000
100
10
1
0.01
0.1
1
Figure 7. Collector Output Capacitance
Figure 8. Current Gain Bandwidth Product
50
10
ICmax(pulse)
(1): TC=Ta
(2): With a 100x100x2mm
AL Heat Sink
(3): Without Heat Sink
(PC=2W)
45
(1)
DC
s
10m
IC(max)
PC[W], POWER DISSIPATION
1mS
IC[A], COLLECTOR CURRENT
10
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTO-BASE VOLTAGE
1
40
35
30
25
20
15
(2)
10
5
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
100
(3)
0
0
25
50
75
100
125
150
175
o
TA[ C], TEMPERATURE
Figure 10. Power Derating
Rev. A1, June 2001
KSD1273
Package Demensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
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OPTOPLANAR™
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CROSSVOLT™
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FACT™
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FASTr™
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LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
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Power247™
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QFET™
QS™
QT Optoelectronics™
Quiet Series™
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Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
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UHC™
UltraFET®
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STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3