PD 91652B IRG4BC20W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V VCE(on) typ. = 2.16V G @VGE = 15V, IC = 6.5A E n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-220AB Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 600 13 6.5 52 52 ± 20 200 60 24 -55 to + 150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.5 ––– 2.0 (0.07) 2.1 ––– 80 ––– Units °C/W g (oz) 1 12/30/00 IRG4BC20W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 0.48 — V/°C VGE = 0V, IC = 1.0mA — 2.16 2.6 IC = 6.5A VGE = 15V Collector-to-Emitter Saturation Voltage — 2.55 — IC = 13A See Fig.2, 5 V — 2.05 — IC = 6.5A , TJ = 150°C Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -8.8 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance U 5.5 8.3 — S VCE = 100 V, IC = 6.5A — — 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current µA — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 26 38 IC = 6.5A 3.7 5.5 nC VCC = 400V See Fig.8 10 15 VGE = 15V 22 — 14 — TJ = 25°C ns 110 160 IC = 6.5A, VCC = 480V 64 96 VGE = 15V, RG = 50Ω 0.06 — Energy losses include "tail" 0.08 — mJ See Fig. 9, 10, 14 0.14 0.2 21 — TJ = 150°C, 15 — IC = 6.5A, VCC = 480V ns 150 — VGE = 15V, RG = 50Ω 150 — Energy losses include "tail" 0.34 — mJ See Fig. 10, 11, 14 7.5 — nH Measured 5mm from package 490 — VGE = 0V 38 — pF VCC = 30V See Fig. 7 8.8 — ƒ = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω, (See fig. 13a) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC20W 25 F o r b o th : T ria n g u la r w a ve : D uty c yc le: 50% TJ = 125° C Ts ink = 90°C G ate drive as spec ified 20 C la m p vo l ta g e : 8 0 % o f ra te d Load Current ( A ) P o w e r D is s ip a tio n = 1 3 W 15 S q u a re wave : 6 0 % o f ra te d v o lta g e 10 5 Id e al d io de s A 0 0.1 1 10 100 1000 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 10 TJ = 150 °C TJ = 25 °C V = 15V 20µs PULSE WIDTH GE 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 °C 10 TJ = 25 °C V = 50V 5µs PULSE WIDTH CC 1 5 6 7 9 10 11 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC20W 14 3.0 V = 15V 80 us PULSE WIDTH VCE , Collector-to-Emitter Voltage(V) GE Maximum DC Collector Current(A) 12 10 8 6 4 2 0 25 50 75 100 125 150 I C = 13 A I C = 6.5 A 2.0 I C =3.25 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) TC , Case Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.01 0.00001 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20W VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 800 Cies 600 400 C oes 200 C res 20 VGE , Gate-to-Emitter Voltage (V) 1000 0 1 10 12 8 4 0 100 0 Total Switching Losses (mJ) Total Switching Losses (mJ) 10 0.14 0.13 0.12 20 30 40 RG , Gate Resistance (Ohm) Ω Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 10 15 20 25 30 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 ° C I C = 6.5A 10 5 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0 VCC = 400V I C = 6.5A 16 VCE , Collector-to-Emitter Voltage (V) 0.15 50 50 Ω RG = Ohm VGE = 15V VCC = 480V IC = 13 A 1 IC = 6.5 A IC = 3.25 A 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC20W 0.6 RG TJ VCC VGE 100 Ω = 50 Ohm = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 0.8 0.4 0.2 VGE = 20V T J = 125 oC 10 SAFE OPERATING AREA 0.0 1 0 2 4 6 8 10 12 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 14 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC20W L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X I C@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 90 % 10 % S VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5µ s Eon E o ff E ts = (E o n +E o ff ) www.irf.com 7 IRG4BC20W Case Outline and Dimensions — TO-220AB 2.8 7 (.1 1 3 ) 2.6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 4 3.78 (.149) 3.54 (.139) -A - 1.32 (.05 2) 1.22 (.04 8) 6 .4 7 (.255) 6 .1 0 (.240) 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1.15 (.0 45) M IN 1 2 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2. 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 20 A B . LEAD 1234- 3 3X 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) -B - 4.69 (.185) 4.20 (.165) 3.96 (.1 60) 3.55 (.1 40) A S S IG N M E N T S G A TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160) 3.55 (.140) 3X 0.93 (.037) 0.69 (.027) 0 .3 6 (.0 1 4 ) M B A M 2 .5 4 (.1 0 0 ) 3X 0.55 (.0 22) 0.46 (.0 18) 2.92 (.115 ) 2.64 (.104 ) 2X CONFORMS TO JEDEC OUTLINE TO-220AB D im e n s io n s in M illim e te rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 8 www.irf.com