FAIRCHILD 2N3906

2N3906 / MMBT3906 / PZT3906
2N3906
MMBT3906
C
E
C
B
TO-92
B
SOT-23
E
Mark: 2A
PZT3906
C
E
C
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
 1997 Fairchild Semiconductor Corporation
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
IBL
Base Cutoff Current
VCE = 30 V, VBE = 3.0 V
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, VBE = 3.0 V
50
nA
V
ON CHARACTERISTICS
hFE
DC Current Gain *
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
60
80
100
60
30
0.65
300
0.25
0.4
0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo
Input Capacitance
NF
Noise Figure (except MMPQ3906)
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 100 kHz
VEB = 0.5 V, IC = 0,
f = 100 kHz
IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ, f=10 Hz to 15.7 kHz
250
MHz
4.5
pF
10.0
pF
4.0
dB
SWITCHING CHARACTERISTICS (except MMPQ3906)
td
Delay Time
VCC = 3.0 V, VBE = 0.5 V,
35
ns
tr
Rise Time
IC = 10 mA, IB1 = 1.0 mA
35
ns
ts
Storage Time
VCC = 3.0 V, IC = 10mA
225
ns
tf
Fall Time
IB1 = IB2 = 1.0 mA
75
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4
Vtf=4 Xtf=6 Rb=10)
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
Max
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Symbol
PD
2N3906
625
5.0
83.3
*PZT3906
1,000
8.0
200
125
Characteristic
mW
mW/°C
°C/W
°C/W
Max
**MMBT3906
350
2.8
357
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
RθJA
Units
Units
MMPQ3906
1,000
8.0
mW
mW/°C
°C/W
°C/W
°C/W
125
240
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
250
Vce = 1V
200
- 40 °C
50
0.1 0.2
0.5 1
2
5 10 20
50 100
I C - COLLECTOR CURRENT (mA)
β = 10
- 40 ºC
25 °C
0.8
125 ºC
0.6
0.4
0.2
1
β = 10
0.2
25 °C
0.1
125 ºC
0.05
Base-Emitter Saturation
Voltage vs Collector Current
0
0.3
0.15
25 °C
1
Collector-Emitter Saturation
Voltage vs Collector Current
0.25
125 °C
150
100
VCESAT- COLLECTOR EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
10
100
I C - COLLECTOR CURRENT (mA)
P 66
200
VBEON - BASE EMITTER ON VOLTAGE (V)
VBESAT- BASE EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
- 40 ºC
0
1
10
100
I C - COLLECTOR CURRENT (mA)
200
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 ºC
25 °C
0.6
125 ºC
0.4
V CE = 1V
0.2
0
0.1
1
10
I C - COLLECTOR CURRENT (mA)
P 66
25
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
100
V
10
= 25V
C obo
CB
CAPACITANCE (pF)
I CBO- COLLECTOR CURRENT (nA)
Collector-Cutoff Current
vs. Ambient Temperature
10
1
0.1
0.01
25
50
75
100
TA - AMBIENT TEMPERATURE ( º C)
8
6
4
C ibo
2
0
0.1
125
1
REVERSE BIAS VOLTAGE (V)
Noise Figure vs Source Resistance
Noise Figure vs Frequency
6
12
V CE = 5.0V
f = 1.0 kHz
NF - NOISE FIGURE (dB)
NF - NOISE FIGURE (dB)
V CE = 5.0V
5
4
I C = 100 µA, R S = 200Ω
3
2
I C = 1.0 mA, R S = 200Ω
1
I C = 100 µA, R S = 2.0 kΩ
0
0.1
1
10
f - FREQUENCY (kHz)
10
I C = 1.0 mA
8
6
I C = 100 µA
4
2
0
0.1
100
Switching Times
vs Collector Current
100
500
ts
tf
10
tr
I B1 = I B2 =
Ic
t on I B1 =
10
Ic
10
t off I = I =
B1
B2
td
10
I C - COLLECTOR CURRENT (mA)
100
t on
V BE(OFF)= 0.5V
10
1
1
t off
100
TIME (nS)
100
1
1
10
R S - SOURCE RESISTANCE ( kΩ )
Turn On and Turn Off Times
vs Collector Current
500
TIME (nS)
10
1
Ic
10
10
I C - COLLECTOR CURRENT (mA)
100
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Power Dissipation vs
Ambient Temperature
PD - POWER DISSIPATION (W)
1
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
TEMPERATURE (o C)
125
150
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.