FSBCW30 C E B SuperSOTTM-3 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 32 V Collector-Base Voltage 32 V Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C VCEO Collector-Emitter Voltage VCBO VEBO *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 4.5" x 5"; mounting pad 0.02 in 1998 Fairchild Semiconductor Corporation 2 Max Units FSBCW30 500 4 250 mW mW/°C °C/W of 2oz copper. FSBCW30, Rev B FSBCW30 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS B V CEO C ollector-E m itter B reakdow n V oltage C ollector-B ase B reakdow n V oltage I C = 2.0 m A , I B = 0 32 V I C = 10 µA , I E = 0 32 V I C = 10 µA , I E = 0 32 V B V EBO C ollector-E m itter B reakdow n V oltage E m itter-B ase B reakdow n V oltage I E = 10 µA , I C = 0 5.0 IC B O C ollector-C utoff C urrent V C B = 32 V , I E = 0 V C B = 32 V , I E = 0, T A = + 100 °C B V CBO B V CES V 100 10 nA µA ON CHARACTERISTICS hFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA VBE(on) Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mA 215 0.60 500 0.30 V 0.75 V 10 dB SMALL SIGNAL CHARACTERISTICS NF Noise Figure VCE = 5.0 V, IC = 200 µA, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz FSBCW30, Rev B FSBCW30 PNP General Purpose Amplifier (continued) 500 V CE = 5V 125 °C 400 300 25 °C 200 100 - 40 °C 0 0.01 0.1 1 10 100 IC - COLLECTOR CURRENT (mA) Base-Emitter Saturation Voltage vs Collector Current 1.2 β = 10 1 0.8 - 40 ºC 25 °C 125 ºC 0.6 0.4 0.2 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 300 VCESAT- COLLECTOR EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.2 0.15 25 °C 0.1 0.05 1 0.1 0.01 25 50 75 100 T A - AMBIENT TEMPERATURE ( º C) 125 - 40 ºC 1 10 100 I C - COLLECTOR CURRENT (mA) 300 P 68 Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 ºC 25 °C 0.6 125 ºC 0.4 V CE = 5V 0.2 BV CER - BREAKDOWN VOLTAGE (V) ICBO- COLLECTOR CURRENT (nA) V CB = 50V 10 125 ºC 0 0.1 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 200 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Collector-Cutoff Current vs. Ambient Temperature 100 β = 10 0.25 95 90 85 80 75 70 0.1 1 10 100 1000 RESISTANCE (kΩ ) FSBCW30, Rev B FSBCW30 PNP General Purpose Amplifier (continued) (continued) Input and Output Capacitance vs Reverse Voltage Collector Saturation Region 4 100 Ta = 25°C f = 1.0 MHz CAPACITANCE (pF) VCE - COLLECTOR-EMITTER VOLTAGE (V) Typical Characteristics 3 Ic = 2 100 uA 300 mA 50 mA 1 10 Cib Cob 0 100 300 700 2000 4000 0.1 1 10 100 Vce- COLLECTOR VOLTAGE(V) Switching Times vs Collector Current Gain Bandwidth Product vs Collector Current 300 40 270 Vce = 5V ts 240 30 TIME (nS) 210 20 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 10 tf 60 30 0 10 0 1 10 20 50 100 150 tr td 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) I C- COLLECTOR CURRENT (mA) 300 P 68 Power Dissipation vs Ambient Temperature 700 P D - POWER DISSIPATION (mW) f T - GAIN BANDWIDTH PRODUCT (MHz) I B - BASE CURRENT (uA) 600 500 TO-92 SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 FSBCW30, Rev B FSBCW30 PNP General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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