MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 40 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.0 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 1997 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A PN2222A (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 75 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 ICEX Collector Cutoff Current VCE = 60 V, VEB(OFF) = 3.0 V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150°C VEB = 3.0 V, IC = 0 IBL Base Cutoff Current VCE = 60 V, VEB(OFF) = 3.0 V V 10 nA 0.01 10 10 µA µA nA 20 nA ON CHARACTERISTICS hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage* SMALL SIGNAL CHARACTERISTICS IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, TA = -55°C IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 35 100 50 40 0.6 300 0.3 1.0 1.2 2.0 V V V V (except MMPQ2222 and NMT2222) fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 8.0 Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 25 pF rb’CC Collector Base Time Constant IC = 20 mA, VCB = 20 V, f = 31.8 MHz 150 pS NF Noise Figure 4.0 dB Re(hie) Real Part of Common-Emitter High Frequency Input Impedance IC = 100 µA, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz IC = 20 mA, VCE = 20 V, f = 300 MHz 60 Ω 10 ns SWITCHING CHARACTERISTICS 300 MHz pF (except MMPQ2222 and NMT2222) td Delay Time VCC = 30 V, VBE(OFF) = 0.5 V, tr Rise Time IC = 150 mA, IB1 = 15 mA 25 ns ts Storage Time VCC = 30 V, IC = 150 mA, 225 ns tf Fall Time IB1 = IB2 = 15 mA 60 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10) PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic Max RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Symbol PD PN2222A 625 5.0 83.3 *PZT2222A 1,000 8.0 200 125 Characteristic mW mW/°C °C/W °C/W Max **MMBT2222A 350 2.8 357 Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die RθJA Units Units MMPQ2222 1,000 8.0 mW mW/°C °C/W °C/W °C/W 125 240 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." VCE = 5V 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 1 IC 10 100 - COLLECTOR CURRENT (mA) 500 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) 500 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBESAT- BASE-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 0.3 125 °C 0.2 25 °C 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 500 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 0.6 25 °C 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Emitter Transition and Output Capacitance vs Reverse Bias Voltage 500 100 V CB 20 = 40V CAPACITANCE (pF) I CBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature 10 1 0.1 f = 1 MHz 16 12 C te 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( °C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) Turn On and Turn Off Times vs Collector Current Switching Times vs Collector Current 400 400 I B1 = I B2 = 320 Ic 10 320 V cc = 25 V TIME (nS) V cc = 25 V 160 t off 80 240 ts 160 tr tf 80 t on td 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 100 I C - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TIME (nS) Ic I B1 = I B2 = 10 240 0 10 100 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 1000 PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Test Circuits 30 V 200 Ω 16 V 1.0 KΩ Ω 0 ≤ 200ns 500 Ω FIGURE 1: Saturated Turn-On Switching Time 6.0 V - 15 V 1k 30 V 1.0 KΩ Ω 0 ≤ 200ns 50 Ω FIGURE 2: Saturated Turn-Off Switching Time 37 Ω PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E