BCW65C C E SOT-23 B Mark: ED NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 32 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. ã 1997 Fairchild Semiconductor Corporation Max Units *BCW65C 350 2.8 357 mW mW/°C °C/W BCW65C Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 32 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 ICES Collector-Cutoff Current IEBO Emitter-Cutoff Current VCB = 32 V, IE = 0 VCB = 32 V, IE = 0, TA = 150°C VEB = 4.0 V, IC = 0 V 20 20 20 nA µA nA ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 100 µA, VCE = 10 V IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V IC = 100 mA, IB = 10 mA IC = 500 mA, B = 50 mA IC = 500 mA, IB = 50 mA 80 180 250 50 100 630 0.3 0.7 2.0 V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance IC = 20 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz MHz Cibo NF Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 80 pF Noise Figure IC = 0.2 mA, VCE = 5.0, RS = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz 10 dB 12 pF Typical Pulsed Current Gain vs Collector Current 500 VCE = 5V 400 300 125 °C 200 25 °C 100 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 0.3 125 °C 0.2 25 °C 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 500 BCW65C NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 1 IC 10 100 - COLLECTOR CURRENT (mA) 500 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Typical Characteristics 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Emitter Transition and Output Capacitance vs Reverse Bias Voltage 500 V CB 20 = 40V CAPACITANCE (pF) 100 10 1 0.1 f = 1 MHz 16 12 C te 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( °C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) Power Dissipation vs Ambient Temperature 350 P D - POWER DISSIPATION (mW) I CBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature Base-Emitter ON Voltage vs Collector Current 300 250 SOT-23 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 100 BCW65C NPN General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.