FAIRCHILD 2N3905_01

2N3905
2N3905
C
TO-92
BE
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
V
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
 2001 Fairchild Semiconductor Corporation
Max
Units
2N3905
625
5.0
83.3
mW
mW/°C
°C/W
200
°C/W
2N3905, Rev A
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
I C = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
I C = 10 µA, I E = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
I E = 10 µA, IC = 0
5.0
ICEX
Collector Cutoff Current
VCE = 30 V, VOB = 3.0 V
50
nA
IBL
Base Cutoff Current
VCE = 30 V, VOB = 3.0 V
50
nA
V
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat )
Collector-Emitter Saturation Voltage
VBE( sat)
Base-Emitter Saturation Voltage
VCE = 1.0 V, IC = 0.1 mA
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 1.0 V, IC = 50 mA
VCE = 1.0 V, IC = 100 mA
I C = 10 mA, I B = 1.0 mA
I C = 50 mA, I B = 5.0 mA
I C = 10 mA, I B = 1.0 mA
I C = 50 mA, I B = 5.0 mA
30
40
50
30
15
0.65
150
0.25
0.40
0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 5.0 V, f = 1.0 MHz
4.5
pF
Cib
Input Capacitance
VEB = 0.5 V, f = 1.0 MHz
10
pF
hfe
Small-Signal Current Gain
2.0
hfe
Small-Signal Current Gain
I C = 10 mA, VCE = 20 V,
f = 100 MHz
I C = 1.0 mA, VCE =10 V,
50
200
hre
Voltage Feedback Ratio
f = 1.0 KHz
0.1
5.0
hie
Input Impedance
0.5
8.0
kΩ
hoe
NF
Output Impedance
1.0
40
µmhos
VCE = 5.0 V, IC = 100 µA,
RS = 1.0 kΩ,
BW = 10 Hz to 15.7 KHz
5.0
dB
ns
Noise Figure
x10
-4
SWITCHING CHARACTERISTICS
td
Delay Time
VCC = 3.0 V, ICS = 10 mA,
35
tr
Rise Time
35
ns
ts
Storage Time
I B1 = 1.0 mA ,VOB ( off ) = 3.0 V
VCC = 3.0 V, ICS = 10 mA,
200
ns
tf
Fall Time
I B1 = IB2 = 1.0 mA
60
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
2N3905
PNP General Purpose Amplifier
(continued)
250
V CE = 1 .0V
125 °C
200
150
25 °C
100
50
0.1
- 40 °C
0.2
0.5 1
2
5
10 20
I C - COLLECTOR CURRE NT (mA)
50
100
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
1
- 40 °C
0.8
25 °C
125 °C
0.6
0.4
0.2
0
1
10
100
I C - COLLECTOR CURRE NT (mA)
200
V CESAT - COLLECTOR EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
VBE( ON)- BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)
h F E - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
β = 10
0.25
0.2
0.15
25 °C
0.1
125°C
0.05
0
- 40 °C
1
1
0.8
- 40 °C
125 °C
0.4
= 25V
0
0.1
1
10
I C - COLLECTOR CURRENT (mA)
25
10
C obo
CAPACITANCE (pF)
I CBO - COLLE CTOR CURRENT (nA)
V CE = 1V
0.2
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
10
1
0.1
0.01
25
25 °C
0.6
100
CB
200
Base Emitter ON Voltage vs
Collector Current
Collector-Cutoff Current
vs Ambient Temperature
V
10
100
I C - COLLECTOR CURRENT (mA)
50
75
100
TA - AMBIE NT TEMP ERATURE (° C)
125
8
6
4
C ibo
2
0
0.1
1
REVERSE BIAS VOLTAGE (V)
10
2N3905
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
6
12
NF - NOISE FIGURE (dB)
NF - NOISE FIGURE (dB)
V CE = 5.0V
5
4
3
I C = 100 µA, R S = 200Ω
2
I C = 1.0 mA, R S = 200Ω
1
I C = 100 µA, R S = 2.0 kΩ
0
0.1
1
10
f - FREQUENCY (kHz)
V CE = 5.0V
f = 1.0 kHz
10
I C = 1.0 mA
8
6
4
I C = 100 µA
2
0
0.1
100
1
10
R S - SOURCE RESISTANCE ( kΩ )
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
500
500
ts
tf
10
I B1 = I B2 =
tr
Ic
t off
100
TIME (nS)
100
t on I
B1 =
Ic
10
t on
VBE(OFF) = 0.5V
10
Ic
t off I = I =
B1
B2
10
10
td
1
1
10
I C - COLLECTOR CURRENT (mA)
1
100
1
I
10
- COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)
TIME (nS)
100
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
TEMPERATURE (o C)
125
150
100
2N3905
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Input Impedance
Voltage Feedback Ratio
)
10
100
h ie - INPUT IMPEDANCE (k Ω)
_ 4
h re - VOLTAGE FEEDBACK RATIO (x10
(continued)
10
1
0.1
1
I C - COLLECTOR CURRENT (mA)
1
0.1
0.1
10
1
I C - COLLECTOR CURRENT (mA)
10
Current Gain
1000
V CE = 10 V
f = 1.0 kHz
500
h fe - CURRENT GAIN
h oe - OUTPUT ADMITTANCE ( µmhos)
Output Admittance
1000
VCE = 10 V
f = 1.0 kHz
100
V CE = 10 V
f = 1.0 kHz
200
100
50
20
10
0.1
1
I C - COLLECTOR CURRENT (mA)
10
10
0.1
1
I C - COLLECTOR CURRENT (mA)
10
2N3905
PNP General Purpose Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G