MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 800 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max *MMBT2907A 350 2.8 **PZT2907A 1,000 8.0 200 357 125 *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. 1998 Fairchild Semiconductor Corporation Units PN2907A 625 5.0 83.3 mW mW/°C °C/W °C/W PN2907A / MMBT2907A / PZT2907A PN2907A (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 60 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 IB Base Cutoff Current VCB = 30 V, VEB = 0.5 V 50 nA ICEX Collector Cutoff Current VCE = 30 V, VBE = 0.5 V 50 nA ICBO Collector Cutoff Current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 150°C 0.02 20 µA µA V ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage* VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA* IC = 500 mA, IB = 50 mA 75 100 100 100 50 IC = 50 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 2.0 V, IC = 0, f = 100 kHz 200 300 0.4 1.6 1.3 2.6 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance MHz 8.0 pF 30 pF 45 ns SWITCHING CHARACTERISTICS ton Turn-on Time VCC = 30 V, IC = 150 mA, td Delay Time IB1 = 15 mA tr Rise Time toff Turn-off Time VCC = 6.0 V, IC = 150 mA 100 ns ts Storage Time IB1 = IB2 = 15 mA 80 ns tf Fall Time 30 ns 10 ns 40 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Spice Model PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2 Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p Itf=.65 Vtf=5 Xtf=1.7 Rb=10) PN2907A / MMBT2907A / PZT2907A PNP General Purpose Amplifier (continued) 500 VCE = 5V 400 125 °C 300 200 100 0 0.1 25 °C - 40 °C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 β = 10 0.2 0 1 10 100 I C - COLLECTOR CURRENT (mA) 500 VCESAT - COLLECTOR EMITTE R VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.5 β = 10 0.4 0.3 25 °C 0.2 125 °C 0.1 - 40 °C 0 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 1 500 Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 - 40 °C 25 °C 125 °C VCE = 5V 0.2 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) 25 Input and Output Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature 20 100 V CB = 35V CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) 10 100 I C - COLLECTOR CURRE NT (mA) 10 1 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE (° C) 125 16 12 C ib 8 4 0 0.1 C ob 1 10 REVERSE BIAS VOLTAGE (V) 50 PN2907A / MMBT2907A / PZT2907A PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Switching Times vs Collector Current 250 I B1 = I B2 = Turn On and Turn Off Times vs Collector Current 500 Ic I B1 = I B2 = 10 400 200 V cc = 15 V ts 150 TIME (nS) TIME (nS) V cc = 15 V 100 tr 300 200 tf t off 100 50 t on td 0 10 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 100 I C - COLLECTOR CURRENT (mA) 1 50 PD - POWER DISSIPATION (W) I B1 - TURN 0N BASE CURRENT (mA) 1000 Power Dissipation vs Ambient Temperature Rise Time vs Collector and Turn On Base Currents 20 10 Ic 10 SOT-223 0.75 t r = 15 V 5 30 ns TO-92 0.5 SOT-23 0.25 2 60 ns 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 0 25 50 75 100 TEMPERATURE ( oC) 125 150 PN2907A / MMBT2907A / PZT2907A PNP General Purpose Amplifier (continued) hoe h re 2 h fe 1 0.5 h ie 0.2 V CE = -10 V T A = 25 oC 0.1_ 1 _ _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _ 50 CHAR. RELATIVE TO VALUES AT VCE = -10V Common Emitter Characteristics 5 CHAR. RELATIVE TO VALUES AT TA = 25oC CHAR. RELATIVE TO VALUES AT I C= -10mA Typical Common Emitter Characteristics (f = 1.0kHz) Common Emitter Characteristics 1.3 1.2 h re and hoe 1.1 1 h ie 0.9 I C = -10mA T A = 25oC h fe 0.8 -4 -8 -12 -16 V CE - COLLECTOR VOLTAGE (V) Common Emitter Characteristics 1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 h fe h ie h re hoe 1.1 hoe 1 0.9 0.8 h re h ie 0.7 0.6 0.5 -40 h re h ie h fe hoe h fe -20 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 -20 PN2907A / MMBT2907A / PZT2907A PNP General Purpose Amplifier (continued) Test Circuits - 30 V 200 Ω Ω 1.0 KΩ 0 - 16 V 50 Ω ≤ 200ns FIGURE 1: Saturated Turn-On Switching Time Test Circuit 1.5 V 1 KΩ Ω NOTE: BVEBO = 5.0 V - 6.0 V 37 Ω Ω 1.0 KΩ 0 - 30 V 50 Ω ≤ 200ns FIGURE 2: Saturated Turn-Off Switching Time Test Circuit PN2907A / MMBT2907A / PZT2907A PNP General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G