Order this document by MRF847/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for 12.5 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of 806 – 960 MHz. • Specified 12.5 Volt, 870 MHz Characteristics Output Power = 45 Watts Power Gain = 4.5 dB Min Efficiency = 60% Min 45 W, 870 MHz RF POWER TRANSISTOR NPN SILICON • Series Equivalent Large–Signal Characterization • Internally Matched Input for Broadband Operation • Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ High Line and Rated Drive • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Silicon Nitride Passivated CASE 319–07, STYLE 1 MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 16.5 Vdc Collector–Base Voltage VCBO 38 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 12 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 150 0.85 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 1.17 °C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 16.5 — — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 38 — — Vdc ICES — — 10 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = 15 Vdc, VBE = 0) (continued) RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF847 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 40 65 120 — Cob — 75 90 pF Common–Base Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 45 W, f = 870 MHz) GPB 4.5 5.5 — dB Collector Efficiency (VCC = 12.5 Vdc, Pout = 45 W, f = 870 MHz) ηc 60 68 — % Load Mismatch (VCC = 15.5 Vdc, Pin = 16 W, f = 870 MHz, VSWR = 10:1, All Phase Angles) ψ ON CHARACTERISTICS DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS No Degradation in Output Power L4 L3 B B Vre PORT C8 C12 TL1 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ L1 C1 C13 C11 C10 ÇÇ ÇÇ ÇÇ ÇÇ 50 Ω + SOCKET ASSY. C9 + +12.5 V C3 C4 D.U.T. TL2 L2 TL3 C2 C1 — 51 pF, 100 mil Chip Capacitor C2 — 12 pF, Mini–Underwood C3 — 11 pF, Mini–Underwood C4, C5 — 21 pF, Mini–Underwood C6 — 0.08 – 8.0 pF Johansen Gigatrim C7 — 47 pF, 100 mil Chip Capacitor C8, C13 — 10 µF, 25 WV Electrolytic Capacitor C9, C12 — 1000 pF Unelco J101 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ C5 C7 ÇÇ ÇÇ ÇÇ ÇÇ TL4 50 Ω C6 C10, C11 — 91 pF Mini–Underwood L1, L2 — 4 Turns #18 Enameled, 200 mil ID L3, L4 — 12 Turns #22 Enameled, Wound Over 10 Ω Resistor TL1, TL4 — 50 Ω Microstrip Line TL2 — Microstrip (Zo = 38 ohms, λ/4 @ 838 MHz) TL3 — Microstrip (Zo = 28 ohms, λ/4 @ 838 MHz) Board Material — 0.032″ Glass–Teflon, 2 oz. cu. clad, εr = 2.56 B — Ferrite Bead, Ferroxcube 56–590–65–3B Figure 1. 806 – 870 MHz Broadband Test Circuit MRF847 2 MOTOROLA RF DEVICE DATA 70 70 f = 806 MHz VCC = 12.5 V 60 Pout , OUTPUT POWER (WATTS) 870 MHz 50 960 MHz 40 30 20 10 60 50 Pin = 16 W 12 W 40 8W 30 20 0 4 8 12 16 Pin, INPUT POWER (WATTS) 20 800 Figure 2. Output Power versus Input Power 820 840 860 880 900 f, FREQUENCY (MHz) 960 6.5 f = 870 MHz GPB 70 5.5 Pin = 16 W G PB , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) 940 Figure 3. Output Power versus Frequency 80 60 12 W 80 ηc 4.5 50 40 70 60 3.5 8W 30 50 VCC = 12.5 V Pin = 16 W 2.5 20 10 920 40 1.6:1 1.4:1 INPUT VSWR 6 8 10 12 VCC, SUPPLY VOLTAGE (VOLTS) 14 Figure 4. Output Power versus Supply Voltage 960 915 f = 960 MHz 870 915 838 ZOL* 806 Zo = 10 Ω 800 820 Zin 840 860 f, FREQUENCY (MHz) 880 20 1.2:1 10 900 Figure 5. Typical Broadband Circuit Performance f MHz f = 806 MHz 838 870 16 1.5 30 η c , COLLECTOR EFFICIENCY Pout , OUTPUT POWER (WATTS) VCC = 12.5 V VCC = 12.5 Vdc, Pin = 16 W, Pout = 45 W Zin f ZOL* (Ohms) MHz (Ohms) 806 0.99 +j5.52 806 0.67 +j1.33 838 1.48 +j5.47 838 0.68 +j1.66 870 1.79 +j5.25 870 0.72 +j2.16 915 2.12 +j4.80 915 0.83 +j2.40 960 2.11 +j4.28 960 0.99 +j2.50 ZOL* = Conjugate of the optimum load impedance into which the ZOL* = device output operates at a given output power, voltage and ZOL* = frequency. Figure 6. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF847 3 PACKAGE DIMENSIONS Q 2 PL -AL IDENTIFICATION NOTCH 6 5 0.15 (0.006) M T A M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 -N1 2 3 DIM A B C D E F H J K L N Q K F D 2 PL 0.38 (0.015) M B 0.38 (0.015) T A M N M T A M M N M J C H E -T- SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 BASE (COMMON) EMITTER (INPUT) BASE (COMMON) BASE (COMMON) COLLECTOR (OUTPUT) BASE (COMMON) CASE 319–07 ISSUE M Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF847 4 ◊ *MRF847/D* MRF847/D MOTOROLA RF DEVICE DATA