Order this document by MRF652/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65% (Typ) 5.0 W, 512 MHz RF POWER TRANSISTORS NPN SILICON • Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB • Series Equivalent Large–Signal Characterization • Gold Metallized, Emitter Ballasted for Long Life and Reliability • Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 16 Vdc Collector–Base Voltage VCBO 36 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 2.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 25 143 Watts mW/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 7.0 °C/W Operating Junction Temperature CASE 244–04, STYLE 1 MRF652 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case CASE 249–06, STYLE 1 MRF652S ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) V(BR)CEO 16 — — Vdc Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 36 — — Vdc Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 36 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICES — — 1.0 mAdc hFE 10 — 150 — OFF CHARACTERISTICS Collector Cutoff Current (VCE = 15 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (continued) REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF652 MRF652S 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Cob — 9.5 15 pF Gpe 10 — 11 6.0 — — dB Collector Efficiency (VCC = 12.5 Vdc, Pout = 5.0 W, f = 512 MHz) η 60 65 — % Load Mismatch (VCC = 15.5 Vdc, Pin = 500 mW, f = 512 MHz, VSWR = 30:1, At All Phase Angles) ψ DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 5.0 W) f = 512 MHz f = 870 MHz No Degradation in Output Power B2 B3 +12.5 Vdc + C6 C7 C9 – GRD L2 C4 D.U.T. C8 Z1 Z2 Z3 Z4 Z5 L1 C1 C2 C3 C5 C10 C11 C12 B1 B1, B2, B3 — Ferrite Bead C1 — 7.0 pF Unelco Mica C2 — 1.0 – 6.0 pF Johanson Variable 5201 C3 — 15 pF Unelco Mica C4 — 43 pF Mini–Underwood Mica C5 — 56 pF Mini–Underwood Mica C6 — 1000 pF Unelco Mica C7 — 0.1 µF Ceramic C8 — 68 pF Mini–Underwood Mica C9 — 1.0 µF Electrolytic 25 V C10, C11 — 5.0 pF Unelco Mica C12 — 1.0 – 10 pF Johanson Variable 5501 L1, L2 — 6 Turns, 20 AWG Wire 0.125″ ID Z1, Z2 — 25 Ohm µStripline Z3, Z4, Z5 — 50 Ohm µStripline Board — 0.032″ Glass–Teflon Figure 1. 440 – 512 MHz Broadband Test Circuit MRF652 MRF652S 2 MOTOROLA RF DEVICE DATA 10 f = 440 MHz 8 Pout , OUTPUT POWER (WATTS) 6 512 MHz 4 2 0 0.2 0.4 0.6 0.8 0.25 W 4 2 VCC = 12.5 V 0 440 1 460 480 500 f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 8 Pout , OUTPUT POWER (WATTS) Pin = 1 W 8 6 0.5 W 4 0.25 W 2 f = 512 MHz Pout 80 6 70 η 4 60 50 Pin = 0.5 W VCC = 12.5 V 2 VSWR 0 520 Pin, INPUT POWER (WATTS) 10 Pout , OUTPUT POWER (WATTS) 0.5 W 6 6 8 10 12 14 0 440 16 460 480 500 2:0 1:1 520 VCC, SUPPLY VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 4. Output Power versus Supply Voltage Figure 5. Typical Broadband Circuit Performance 0 1 1 Zin 2 1.0 3 470 512 2 3 VCC = 12.5 Vdc Pout = 5.0 W f = 400 MHz 2.0 440 3.0 Zo = 10 Ω 6.0 470 ZOL* 512 7.0 8.0 440 ohms 4.0 5.0 40 1:5 η c , COLLECTOR EFFICIENCY (%) 0 VCC = 12.5 V Pin = 1 W 8 INPUT VSWR Pout , OUTPUT POWER (WATTS) 10 f MHz Zin Ohms ZOL* Ohms 400 440 470 512 1.18 + j0.54 1.19 + j0.88 1.19 + j1.11 1.19 + j1.35 6.7 – j6.9 7.05 – j6.1 7.6 – j5.1 8.1 – j4.1 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. 9.0 10 f = 400 MHz Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF652 MRF652S 3 PACKAGE DIMENSIONS 2 3 D 1 4 K M T A J SEATING PLANE F U P S C STYLE 1: PIN 1. 2. 3. 4. 8–32 NC 2A WRENCH FLAT E EMITTER BASE EMITTER COLLECTOR DIM A B C D E G J K M P S T U MILLIMETERS MIN MAX 7.06 7.26 6.20 6.50 14.99 16.51 5.46 5.96 1.40 1.65 1.52 ––– 0.08 0.17 11.05 ––– 45_NOM ––– 1.27 3.00 3.25 1.40 1.77 2.92 3.68 INCHES MIN MAX 0.278 0.286 0.244 0.256 0.590 0.650 0.215 0.235 0.055 0.065 0.060 ––– 0.003 0.007 0.435 ––– 45 _NOM ––– 0.050 0.118 0.128 0.055 0.070 0.115 0.145 B CASE 244–04 ISSUE J MRF652 2 K H D 1 3 4 J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE = GROUND AND IS CONNECTED TO PIN 1 AND 3. M A C SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. DIM A C D H J K M INCHES MIN MAX 0.271 0.286 0.112 0.136 0.215 0.235 0.055 0.065 0.003 0.007 0.435 ––– 45_ REF MILLIMETERS MIN MAX 6.88 7.26 2.84 3.45 5.46 5.97 1.40 1.65 0.08 0.18 11.05 ––– 45 _ REF EMITTER BASE EMITTER COLLECTOR CASE 249–06 ISSUE H MRF652S Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF652 MRF652S 4 ◊ *MRF652/D* MRF652/D MOTOROLA RF DEVICE DATA