SSTA06 / MMSTA06 / MPSA06 Transistors NPN General Purpose Transistor SSTA06 / MMSTA06 / MPSA06 !External dimensions (Units : mm) !Features 1) BVCEO < 80V.( IC=1mA) 2) Complements the SSTA56 / MMSTA56 / MPSA56. SSTA06 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 (2) 1.3+0.2 −0.1 !Package, marking and packaging specifications Part No. SSTA06 MMSTA06 MPSA06 Packaging type SST3 R1G SMT3 R1G TO-92 - T116 T146 T93 3000 3000 3000 0.2Min. (3) +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions ROHM : SST3 MMSTA06 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 Collector power SSTA06, MMSTA06 dissipation MPSA06 Junction temperature Unit 80 80 4 0.5 V V V A VEBO IC 0.2 PC Tj 0.625 150 Tstg -55~+150 2.8±0.2 1.6 +0.2 −0.1 Limits VCBO VCEO (3) 0.4 +0.1 −0.05 +0.1 0.15 −0.06 All terminals have same dimensions ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector W ˚C ˚C MPSA06 4.8±0.2 3.7±0.2 (12.7Min.) 2.5Min. Storage temperature Symbol 0~0.1 4.8±0.2 Parameter (2) (1) !Absolute maximum ratings (Ta=25°C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (1) Emitter (2) Base (3) Collector 0.3~0.6 Mark Code Basic ordering unit (pieces) 0~0.1 2.4±0.2 (1) 0.5±0.1 (1) ROHM : TO-92 EIAJ : SC-43 (2) (3) 2.5 +0.3 −0.1 5 !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO 4 80 - - V V IC=100µA IC=1mA ICBO - - - - 0.1 1 µA VCB=80V Collector-emitter saturation voltage ICEO VCE(sat) - - 0.25 V IC/IB=100mA/10mA Base-emitter saturation voltage VBE(ON) - - 1.2 V VCE/IB=1V/100mA 100 - - 100 - - Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current DC current transfer ratio hFE Transition frequency fT 100 - MHz Conditions VCE=60V VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IE= −10mA, f=100MHz 0.45±0.1 2.3 (1) Emitter (2) Base (3) Collector SSTA06 / MMSTA06 / MPSA06 Transistors COLLECTOR CURRENT : IC (mA) 100 Ta=25˚C 500µA 450µA 400µA 80 350µA 300µA 60 250µA 200µA 40 150µA 100µA 20 50µA IB=0µA 0 0 5.0 1.0 2.0 3.0 4.0 COLLECTOR-EMITTER VOLTAGE : VCE (V) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) !Electrical characteristics curves Ta=25˚C IC / IB=10 0.3 0.2 Ta=125˚C 0.1 25˚C 0 −40˚C 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.2 Collector-emitter saturation voltage vs. collector current Fig.1 Grounded emitter output characteristics 1000 DC CURRENT GAIN : hFE Ta=25˚C 5V VCE=10V 100 3V 1V 10 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) 1000 1000 Ta=25˚C VCE=5V DC CURRENT GAIN : hFE Ta=125˚C 25˚C −40˚C 100 10 0.1 1.0 10 COLLECTOR CURRENT IC : (mA) 100 Fig.4 DC current gain vs. collector current ( II ) 1000 ASE EMITTER SATURATION VOLTAGEV : BE(sat) (V) Fig.3 DC current gain vs. collector current ( I ) 1.8 Ta=25˚C IC / IB=10 1.6 1.4 1.2 1.0 Ta=−40˚C 0.8 25˚C 0.6 125˚C 0.4 0.2 0 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.5 Base-emitter saturation voltage vs. collector current SSTA06 / MMSTA06 / MPSA06 Transistors Cib Ta=25˚C f=1MHz 1.4 1.2 1.0 Ta=−40˚C 0.8 25˚C 0.6 125˚C Cob 10 0.2 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.6 Grounded emitter propagation characteristics 0.5 1 2 5 10 20 REVERSE BIAS VOLTAGE (V) Ta=25˚C VCE=5V 100 0.4 0 CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) Ta=25˚C VCE=5V 1.6 CAPACITANCE (pF) BASE EMITTER VOLTAGE : VBE(ON) (V) 1000 100 1.8 50 Fig.7 Input / output capacitance vs. voltage 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.8 Gain bandwidth product vs. collector current