BC848BW / BC848B / BC848C Transistors NPN General Purpose Transistor BC848BW / BC848B / BC848C !External dimensions (Units : mm) !Features 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 0.7±0.1 0~0.1 0.1~0.4 (3) 2.1±0.1 (2) 1.25±0.1 (1) +0.1 0.3 −0 0.15±0.05 All terminals have same dimensions ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector BC848B, BC848C 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 2.4±0.2 (2) 1.3 +0.2 −0.1 (1) 0~0.1 0.2Min. (3) +0.1 0.4 −0.05 +0.1 0.15 −0.06 All terminals have same dimensions ROHM : SST3 (1) Emitter (2) Base (3) Collector !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Collector power dissipation Junction temperature Storage temperature Limits 30 30 5 0.1 0.2 0.35 150 −55~+150 PC Tj Tstg Unit V V V A W ∗ °C °C ∗ When mounted on a 7×5×0.6mm ceramic board. !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Symbol BVCBO BVCEO BVEBO ICBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(on) DC current transfer ratio hFE Transition frequency Collector output capacitance Collector output capacitance fT Cob Cib Min. 30 30 5 − − − − 0.58 200 420 − − − Typ. Max. Unit Conditions V IC=50µA − − V IC=1mA − − V IE=50µA − − 15 VCB=30V − µA 5 VCB=30V, Ta=150°C − 0.25 IC/IB=10mA/0.5mA − V 0.6 IC/IB=100mA/5mA − 0.77 V VCE/IC=5V/10mA − 450 VCE/IC=5V/2mA (BC848B/BW) − − 800 VCE/IC=5V/2mA (BC848C) − MHz VCE=5V, IE=−20mA, f=100MHz 200 − pF VCB=10V, IE=0, f=1MHz 3 − pF VEB=0.5V, IE=0, f=1MHz 8 − (SPEC-C22) 1/5 BC848BW / BC848B / BC848C Transistors !Packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) BC848BW UMT3 G1K T106 3000 BC848B SST3 G1K T116 3000 BC848C SST3 G1L T116 3000 !Electrical characteristic curves 10.0 IC−COLLECTOR CURRENT (mA) Ta=25°C 80 1.2 1.0 0.8 IC-COLLECTOR CURRENT (mA) 100 0.6 60 40 0.4 0.2 0.1 20 IB=0mA 0 0 2.0 1.0 VCE−COLLECTOR-EMITTER VOLTAGE (V) Fig.1 Grounded emitter output characteristics ( ) 35 30 8.0 25 6.0 20 15 4.0 10 2.0 5 IB=0µA Ta=25°C 0 0 2.0 1.0 VCE-COLLECTOR-EMITTER VOLTAGE (V) Fig.2 Grounded emitter output characteristics ( ) 1000 hFE-DC CURRENT GAIN Ta=25°C VCE=10V 1V 100 10 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 5V 100 1000 Fig.3 DC current gain vs. collector current ( ) hFE-DC CURRENT GAIN 1000 VCE=5V Ta=125°C Ta=25°C Ta=−55°C 100 10 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 1000 Fig.4 DC current gain vs. collector current ( ) 2/5 BC848BW / BC848B / BC848C Transistors 1000 hFE-AC CURRENT GAIN Ta=25°C VCE=5V f=1kHz 100 10 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) 10 100 0.16 Ta=25°C IC/IB=10 0.12 0.08 0.04 0 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 Fig.6 Collector-emitter saturation voltage vs. collector current 1000 Ta=25°C IC/IB=10 Ta=25°C IC/IB=10 1.8 1.6 1.2 0.8 0.4 0 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 1000 Ta=25°C IC/IB=10 1.6 1.2 0.8 0.4 0 0.1 100 Fig.7 Base-emitter saturation voltage vs. collector current Ta=25°C VCE=5V 1.8 VBE(ON)BASE EMITTER VOLTAGE (V) VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.18 VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V) Fig.5 AC current gain vs. collector current 1.0 10 IC-COLLECTOR CURRENT (mA) 100 Fig.8 Grounded emitter propagation characteristics 1000 40V Ta=25°C IC=101B1=101B2 100 10 1.0 VCC=40V 100 10 IC-COLLECTOR CURRENT (mA) Fig.9 Turn-on time vs. collector current 100 tS-STORAGE TIME (ns) t r -RISE TIME (ns) ton-TURN ON TIME (ns) 3V 10 1.0 10 IC-COLLECTOR CURRENT (mA) Fig.10 Rise time vs. collector current VCE=15V 100 100 10 1.0 10 IC-COLLECTOR CURRENT (mA) 100 Fig.11 Storage time vs. collector current 3/5 BC848BW / BC848B / BC848C CAPACITANCE (pF) t f -FALL TIME (ns) 100 10 IC-COLLECTOR CURRENT (mA) 1 10 REVERSE BIAS VOLTAGE (V) 100 500 100 h PARAMETER NORMALIZED TO 1mA CURRENT GAIN-BANDWIDTH PRODUCT (MHz) Cob Ta=25°C VCE=6V f=270Hz hoe hre 10 hie hre 1 hfe hfe IC=1mA hie=7.8kΩ hfe=280 hie hre=4.5×10−5 hoe=7.5µS hoe 0.1 0.1 Fig.15 Gain bandwidth product vs. collector current 1 10 IC-COLLECTOR CURRENT (mA) Fig.14 Gain bandwidth product 10n VCB=30V 1n 100P 10P 1P 0.1P 0 4 2 10k Fig.18 Noise vs. collector current 100k 25 50 75 100 125 TA-AMBIENT TEMPERATURE (°C) 150 Fig.17 Collector cutoff current 100k dB 12 B 8d B 5d 6 500 Ta=25°C VCE=5V f=10Hz B 8 10 100 IC-COLLECTOR CURRENT (mA) B NF NOISE FIGURE (dB) 0.5 0.5 d =1 NF 10 1k f-FREQUENCY (Hz) 300MHz 200MHz 100MHz 5.0 3d Ta=25°C VCE=5V IC=100µA RS=10kΩ 100 100 Ta=25°C 400MHz Fig.16 h parameter vs. collector current 12 0 10 50 50 100MHz 200MHz 300MHz 400MHz Fig.13 Input/output capacitance vs. voltage Ta=25°C VCE=5V 10 0.5 1.0 10 100 IC-COLLECTOR CURRENT (mA) Cib 10 1 0.5 100 Fig.12 Fall time vs. collector current 1000 Ta=25°C f=1MHz ICBO-COLLECTOR CUTOFF CURRENT (A) 10 1.0 100 Ta=25°C VCC=40V IC=101B1=101B2 RS-SOURCE RESISTANCE (Ω) 1000 VCE COLLECTOR-EMITTER VOLTAGE (V) Transistors 10k 1k 100 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) 10 Fig.19 Noise characteristics ( ) 4/5 BC848BW / BC848B / BC848C Transistors 0.1 1 IC-COLLECTOR CURRENT (mA) Fig.21 Noise characteristics ( RS-SOURCE RESISTANCE (Ω) RS-SOURCE RESISTANCE (Ω) 10 ) B 8d B 5d 100 0.01 B 3d Fig.20 Noise characteristics ( ) 1k Ta=25°C VCE=5V 10k f=10kHz dB =1 NF 10 dB =1 NF B 0.1 1 IC-COLLECTOR CURRENT (mA) Ta=25°C VCE=5V 10k f=1kHz dB 12 B B 100 0.01 100k B 5d B 3d dB 8d 5d 1d 1k 100k B 8d 12 Ta=25°C VCE=5V f=30Hz B 10k 3d = NF RS-SOURCE RESISTANCE (Ω) 100k 1k 100 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) Fig.22 Noise characteristics ( 10 ) 5/5