2SD2672 Transistors Low frequency amplifier 2SD2672 !External dimensions (Units : mm) !Application Low frequency amplifier Driver 0.4 2.9 (1) (3) 1.9 0.3 0.6 1.0MAX 0.85 0 0.1 0.7 0.16 (2) !Features 1) A collector current is large. (4A) 2) VCE(sat) ≤ 250mV At IC = 2A / IB = 40mA 0.95 0.95 2.8 1.6 Each lead has same dimensions ROHM : TSMT3 Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg (1) Emitter (2) Base (3) Collector !Packaging specifications !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Abbreviated symbol : YX Limits 15 12 6 4 8 500 150 −55~+150 Unit V V V A A∗ mW °C °C Package Type Taping Code T146 Basic ordering unit (pieces) 3000 2SD2672 ∗Single pulse, PW=1ms !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 15 12 6 − − − 270 − − Typ. − − − − − 70 − 250 60 Max. − − − 100 100 250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=15V VEB=6V IC=2A, IB=40mA VCE=2V, IC=200mA ∗ VCE=2V, IE=−200mA, f=100MHz ∗ VCB=10V, IE=0A, f=1MHz ∗ Pulsed 1/2 2SD2672 Transistors Ta=25°C Ta=−40°C 100 VCE=2V Pulsed 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Ta=25°C Ta=125°C 0.1 Ta=−40°C 0.01 2 BASE TO EMITTER CURRENT : VBE (V) Fig.4 Grounded emitter propagation characteristics SWITCHING TIME : (ns) 10000 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (A) 1 1 0.1 Ta=25°C Ta=125°C 0.01 Ta=−40°C 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current VBE=2V Pulsed 0.001 0 =20/1 IC/IB=20 Pulsed 0.001 0.001 Fig.1 DC current gain vs. collector current 10 1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE Ta=125°C 1 IC/IB=20/1 Pulsed Ta=−40°C Ta=25°C 0.1 0.01 0.001 Ta=125°C 0.01 0.1 1 1000 1000 Cib Cob 100 10 Ta=25℃ IC=0A f=1MHz 1 0.001 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.5 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 10 COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) 1000 BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) !Electrical characteristic curves Ta=25°C VCE=−2V f=100MHz 100 10 0.01 0.1 1 10 EMITTER CURRENT : IE (A) Fig.6 Gain bandwidth product vs. emitter current Ta=25°C VCE=−5V f=100MHz tdon 1000 tstg 100 tf 10 tr 1 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.7 Switching time 2/2