EMZ7 / UMZ7N Transistors General purpose transistor (dual transistors) EMZ7 / UMZ7N ! External dimensions (Units : mm) EMZ7 / UMZ7N (2) (1) Tr1 Tr2 (4) (5) (6) ! Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Tr1 Tr2 Unit Collector-base voltage VCBO 15 −15 V Collector-emitter voltage VCEO 12 −12 V Emitter-base voltage VEBO 6 −6 V Collector current IC 500 −500 mA Collector power dissipation PC 150(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55∼+150 °C ∗1 120mW per element must not be exceeded. ∗1 1.3 2.0 (3) (2) (1) 0.7 0to0.1 0.9 2.1 0.1Min. Abbreviated symbol : Z7 0.65 1.25 Each lead has same dimensions ! Equivalent Circuit (3) (5) (6) (1) ROHM : EMT6 !Structure NPN / PNP epitaxial planar silicon transistor 0.2 (2) 1.2 1.6 0.15 (6) 0.5 0.5 1.0 1.6 (5) 0.5 0.22 (3) (4) 0.65 UMZ7N (4) EMZ7 0.13 !Features 1) Both a 2SA2018 chip and 2SC5585 chip in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. 5) Low VCE(sat) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : Z7 EMZ7 / UMZ7N Transistors ! Electrical characteristics (Ta=25°C) Tr1 (NPN) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 15 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA Collector cutoff current ICBO − − 0.1 µA VCB=15V Emitter cutoff current IEBO µA VEB=6V Parameter Collector-emitter saturation voltage − − 0.1 VCE(sat) − 90 250 mV hFE 270 − 680 − DC current transfer ratio Transition frequency Output capacitance fT − 320 − MHz Cob − 7.5 − pF Conditions IC/IB=200mA/10mA VCE/IC=2V/10mA VCE=2V, IC=−10mA, f=100MHz VCB=10V, IE=0A, f=1MHz Tr2 (PNP) Parameter Conditions Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −15 − − V IC=−10µA Collector-emitter breakdown voltage BVCEO −12 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −6 − − V IE=−10µA ICBO − − −0.1 µA VCB=−15V VEB=−6V Collector cutoff current IEBO − − −0.1 µA VCE(sat) − −100 −250 mV hFE 270 − 680 − fT − 260 − MHz Cob − 6.5 − pF Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance IC/IB=−200mA/−10mA VCE/IC=−2V/−10mA VCE=−2V, IC=10mA, f=100MHz VCB=−10V, IE=0A, f=1MHz !Packaging specifications Taping Packaging type Code Part No. Basic ordering unit (pieces) TR T2R 3000 8000 − UMZ7N − EMZ7 1000 VCE=2V DC CURRENT GAIN : hFE 200 100 10 −40°C 25°C 20 25°C 50 5 −40°C 200 100 50 20 10 5 2 2 1 1 0 0.5 1.0 1.5 BASE TO EMITTER VOLTAGE : VBE(V) Fig.1 Grounded emitter propagation characteristics VCE=2V Ta=125°C 25°C 500 500 Ta = 1 COLLECTOR CURRENT : IC(mA) 1000 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA) Fig.2 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) !Electrical characteristic curves Tr1 (NPN) 1000 IC/IB=20 500 200 100 50 Ta=125°C 20 −40°C 25°C 10 5 2 1 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) EMZ7 / UMZ7N 200 100 50 20 IC/IB=50 10 20 10 5 2 1 2 5 10 20 5000 VCE=2V Ta=25˚C Pulsed 100 1000 500 200 50 20 10 100 5 50 2 20 1 1 2 5 10 20 1 50 100 200 5001000 2 5 10 20 50 100 200 5001000 COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 200 25°C 125°C COLLECTOR CURRENT : IC (mA) 1000 500 Ta=−40°C 2000 10 50 100 200 5001000 IC/IB=20 fT (MHZ) Ta=25°C 500 1 1000 10000 1000 BASE SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Transistors Fig.6 Collector output capacitance Emitter input capacitance vs. base voltage Fig.5 Base-emitter saturation voltage vs. collector current IE=0A f=1MHz Ta=25°C 500 200 100 50 Cib 20 Cob 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs collector-base voltage Emitter input capacitance vs emitter-base voltage 1000 VCE=2V 500 VCE=2V Ta=125°C 500 DC CURRENT GAIN : hFE Ta=25°C 200 100 Ta=125 ˚C 20 10 Ta= -40˚C 50 Ta=25˚C COLLECTOR CURRENT : IC (mA) 1000 5 200 50 20 10 5 2 2 1 1 0 0.5 1.0 1.5 BASE TO EMITTER VOLTAGE : VBE (V) Fig.8 Grounded emitter propagation characteristics Ta= −40°C 100 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.9 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Tr2 (PNP) 1000 IC/IB=20 500 200 100 Ta=125°C 50 Ta=25°C 20 Ta= −40°C 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.10 Collector-emitter saturation voltage vs. collector current ( Ι ) EMZ7 / UMZ7N Ta=25°C 500 200 100 50 IC / IB=50 IC / IB=20 20 IC / IB=10 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 EMITTER INPUT CAPACITANCE : Cib(F) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.11 Collector-emitter saturation voltage vs. collector current IE=0A 500 f=1MHz Ta=25°C 200 100 50 Cib 20 10 Cob 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.14 2000 Ta=25°C 1000 Ta= −40°C 500 Ta=125°C 200 100 50 20 10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 1000 1 2 5 10 20 50 100 200 500 1000 Fig.12 Base-emitter saturation voltage vs. collector current VCE=2V Ta=25°C 500 200 100 50 20 10 5 2 1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 1000 IC/IB=20 5000 TRANSITION FREQUENCY : fT (MHz) 10000 1000 BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IC (mA) Fig.13 Gain bandwidth product vs. emitter current