FAIRCHILD MPSA12

MPSA12
C
TO-92
BE
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at currents to 1.0 A. Sourced from Process
05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
V
VCES
Collector-Emitter Voltage
20
VCBO
Collector-Base Voltage
20
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current - Continuous
TJ, Tstg
Operating and Storage Junction Temperature Range
1.2
A
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
 1997 Fairchild Semiconductor Corporation
Max
Units
MPSA12
625
5.0
83.3
mW
mW/°C
°C/W
200
°C/W
MPSA12
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CES
Collector-Base Breakdown Voltage
I C = 100 µA, IE = 0
ICBO
Collector Cutoff Current
VCB = 15 V, IE = 0
100
nA
ICES
Emitter Cutoff Current
VCE = 15 V, IC = 0
100
nA
IEBO
Emitter Cutoff Current
VEB = 10 V, IC = 0
100
nA
20
V
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 0.01 mA
1.0
V
VBE(on)
Base-Emitter On Voltage
IC = 10 mA, VCE = 5.0 V
1.4
V
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCE = 5.0 V, IC = 10 Ma
20,000
MPSA12
NPN Darlington Transistor