MPSA12 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCES Collector-Emitter Voltage 20 VCBO Collector-Base Voltage 20 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.2 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units MPSA12 625 5.0 83.3 mW mW/°C °C/W 200 °C/W MPSA12 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CES Collector-Base Breakdown Voltage I C = 100 µA, IE = 0 ICBO Collector Cutoff Current VCB = 15 V, IE = 0 100 nA ICES Emitter Cutoff Current VCE = 15 V, IC = 0 100 nA IEBO Emitter Cutoff Current VEB = 10 V, IC = 0 100 nA 20 V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.01 mA 1.0 V VBE(on) Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 1.4 V *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% VCE = 5.0 V, IC = 10 Ma 20,000 MPSA12 NPN Darlington Transistor