TN5415A C TO-226 BE PNP High Voltage Amplifier This device is designed for use as high voltage drivers requiring collector currents to 100 mA. Sourced from Process 76. See MPSA92 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 200 VCBO Collector-Base Voltage 200 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units TN5415A 1.0 8.0 125 W mW/°C °C/W 50 °C/W TN5415A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 50 mA, I B = 0 200 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 µA, IC = 0 4.0 ICBO Collector Cutoff Current VCB = 175 V 50 µA ICEX Collector Cutoff Current VCE = 200 V, VBE = 1.5 V (rev) 50 µA ICEO Collector Cutoff Current VCE = 150 V 50 µA IEBO Emitter Cutoff Current VEB = 4.0 V, IC = 0 20 µA V ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, IC = 50 mA VCE( sat) Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 30 150 2.5 V VBE( on) Base-Emitter On Voltage IC = 50 mA, VCE = 10 V 1.5 V VCB = 10 V, f = 1.0 MHz 15 pF 75 pF SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance Cib Input Capacitance VEB = 5.0 V, f = 1.0 MHz hfe Small-Signal Current Gain Re(hie) Input Resistance I C = 5.0 mA, VCE = 10 V, f = 5.0 MHz I C = 5.0 mA, VCE = 10 V, f = 1.0 kHz VCE = 10 V, IC = 5.0 mA IS /b Safe Operating Area VCE = 100 V, t = 100 mS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 3.0 25 300 100 Ω mA TN5415A PNP High Voltage Amplifier