MPS6543 C TO-92 EB NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 µA to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 25 VCBO Collector-Base Voltage 35 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units MPS6543 350 2.8 125 mW mW/°C °C/W 357 °C/W MPS6543 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, I B = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 35 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 3.0 ICBO Collector Cutoff Current VCB = 25 V, IE = 0 0.1 µA IEBO Emitter Cutoff Current VEB = 2.0 V, IC = 0 1.0 µA V ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, IC = 4.0 mA 25 VCE( sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.35 V VBE( on) Base-Emitter On Voltage IC = 10 mA, IB = 1.0 mA 0.95 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cob rb’CC Output Capacitance Collector- Base Time Constant *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% IC = 4.0 mA, VCE = 10 V, f =100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz IE = 4.0 mA, VCE = 10 V, f = 31.8 MHz 750 MHz 1.0 pF 9.5 pS MPS6543 NPN RF Transistor