FAIRCHILD TIS97

TIS97
E
TO-92
BC
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100 for characteristics.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
V
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
500
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
 1997 Fairchild Semiconductor Corporation
Max
Units
TIS97
625
5.0
83.3
mW
mW/°C
°C/W
200
°C/W
TIS97
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
10
10
20
nA
µA
nA
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
I C = 10 mA, I B = 0
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB = 40 V, IE = 0
VCB = 60 V, IE = 0
VEB = 6.0 V, I C = 0
40
V
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 5.0 V, I C = 100 µA
250
700
VBE( on)
Base-Emitter On Voltage
VCE = 5.0 V, I C = 100 µA
0.45
0.65
1.0
4.0
pF
16
pF
V
SMALL SIGNAL CHARACTERISTICS
Ccb
Collector-Base Capacitance
VCB = 5.0 V, f = 1.0 MHz
Ceb
Emitter-Base Capacitance
VEB = 0.5 V, f = 1.0 MHz
hfe
Small-Signal Current Gain
I C = 100 µA, VCE = 5.0 V,
f = 1.0 kHz
I C = 10 mA, VCE = 5.0 V,
f = 100 MHz
VCE = 5.0 V, IC = 30 µA,
Rg = 10 kΩ, f = 1.0 kHz,
BW = 100 Hz
VCE = 5.0 V, IC = 100 µA,
Rg = 10 kΩ, BW = 15.7 kHz
NF
Noise Figure
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
250
800
2.0
2.0
dB
3.0
dB
TIS97
NPN General Purpose Amplifier