MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1.2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max Units MPSA63 625 5.0 83.3 *MMBTA63 350 2.8 **PZTA63 1,000 8.0 200 357 125 mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. 1997 Fairchild Semiconductor Corporation A63, Rev A MPSA63 / MMBTA63 / PZTA63 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage IC = 100 µA, IB = 0 ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 100 nA IEBO Emitter-Cutoff Current VEB = 10 V, IC = 0 100 nA 1.5 V 2.0 V 30 V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA VBE(on) Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V 5,000 10,000 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% IC = 10 mA, VCE = 5.0 V, f = 100 MHz 125 MHz MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor