PN930 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 45 VCBO Collector-Base Voltage 45 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units PN930 625 5.0 83.3 mW mW/°C °C/W 200 °C/W PN930 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 10 mA, I B = 0 45 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, IE = 0 45 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 nA, IC = 0 5.0 ICEO Collector Cutoff Current VCE = 5.0 V 2.0 nA ICBO Collector Cutoff Current VCB = 45 V, IE = 0 10 nA ICES Collector Cutoff Current IEBO Emitter Cutoff Current VCE = 45 V, IE = 0 VCE = 45 V, IE = 0, TA = 170 °C VEB = 5.0 V, IC = 0 10 10 10 nA µA nA V ON CHARACTERISTICS* VCE( sat) Collector-Emitter Saturation Voltage VCE = 5.0 V, IC = 10 µA VCE = 5.0 V, IC = 10 µA, T = − 55 °C VCE = 5.0 V, IC = 500 µA VCE = 5.0 V, IC = 10 mA IC = 10 mA, I B = 0.5 mA VBE( sat) Base-Emitter Saturation Voltage IC = 10 mA, I B = 0.5 mA hFE DC Current Gain 100 0.6 300 20 150 600 1.0 V 1.0 V 8.0 pF SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 5.0 V, f = 1.0 MHz hfe Small-Signal Current Gain hib Input Impedance IC = 500 µA, VCE = 5.0 V, f = 20 MHz IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 1.0 mA, VCE = 5.0 V, hrb Voltage Feedback Ratio f = 1.0 kHz hob NF Output Admittance Noise Figure *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% VCE = 5.0 V, IC = 10 µA, Rg = 10 kΩ, BW = 15.7 kHz 1.5 150 25 600 32 600 Ω − 6 1.0 x10 µmho 3.0 dB PN930 NPN General Purpose Amplifier