Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2405 and 2SC2406 Unit: mm ■ Features +0.2 Collector to 2SA1034 emitter voltage 2SA1035 V –55 –35 VCEO –55 VEBO –5 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1.45 0.95 0.95 +0.1 0.4 –0.05 0.1 to 0.3 0.4±0.2 V Emitter to base voltage ■ Electrical Characteristics 2 Unit –35 VCBO 3 +0.1 2SA1035 1 0.16 –0.06 2SA1034 base voltage Ratings 0.65±0.15 1:Base 2:Emitter 3:Collector 0 to 0.1 Symbol Collector to +0.2 (Ta=25˚C) 1.5 –0.05 0.8 Parameter 2.9 –0.05 ■ Absolute Maximum Ratings 1.9±0.2 ● +0.25 0.65±0.15 +0.2 ● 2.8 –0.3 Low noise voltage NV. High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.1 –0.1 ● JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : F(2SA1034) H(2SA1035) (Ta=25˚C) Symbol Parameter Conditions min typ max Unit ICBO VCB = –10V, IE = 0 –100 nA ICEO VCE = –10V, IB = 0 –1 µA VCBO IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 Forward current transfer ratio hFE*1 VCE = –5V, IC = –2mA 180 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA*2 – 0.7 – 0.6 V Base to emitter voltage VBE VCE = –1V, IC = –100mA*2 200 –1.0 V Transition frequency fT VCB = –5V, IE = 2mA, f = 200MHz Collector cutoff current Collector to base 2SA1034 voltage 2SA1035 Collector to emitter 2SA1034 voltage 2SA1035 Noise voltage *h FE1 V –55 –35 V –55 V 700 MHz VCE = –10V, IC = –1mA, GV = 80dB NV 150 Rg = 100kΩ, Function = FLAT *2 Rank classification Marking Symbol –35 Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 2SA1034 FR FS FT 2SA1035 HR HS HT mV Pulse measurement 1 2SA1034, 2SA1035 Transistor PC — Ta IC — VCE –160 IC — IB Ta=25˚C IB=–350µA –120 80 –120 –300µA –250µA –100 120 –200µA –80 –150µA –60 –100µA –40 –20 –80 –60 –40 –20 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –4 –6 –8 –10 –12 0 Collector to emitter voltage VCE (V) IB — VBE – 0.1 IC — VBE –800 25˚C Collector current IC (mA) –100 Base current IB (µA) –400 –300 –200 – 0.4 –100 VCE=–5V –700 –500 – 0.3 Ta=75˚C – 0.5 VCE(sat) — IC –120 VCE=–5V Ta=25˚C –600 – 0.2 Base current IB (mA) –25˚C –80 –60 Collector to emitter saturation voltage VCE(sat) (V) 0 IC/IB=10 –30 –10 –3 –1 – 0.3 –40 Ta=75˚C 25˚C – 0.1 –20 –100 –25˚C – 0.03 0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 0 Base to emitter voltage VBE (V) – 0.4 – 0.8 –1.2 hFE — IC Transition frequency fT (MHz) Ta=75˚C 25˚C –25˚C 200 100 400 350 300 250 200 150 100 50 –1 –3 –10 –30 Collector current IC (mA) –100 0 0.1 0.3 1 3 –3 –10 –30 –100 20 VCB=–5V Ta=25˚C 450 500 –1 Collector current IC (mA) Cob — VCB VCE=–5V 0 – 0.1 – 0.3 – 0.01 –0.1 –0.3 fT — IE 500 300 –2.0 Base to emitter voltage VBE (V) 600 400 –1.6 Collector output capacitance Cob (pF) 0 Forward current transfer ratio hFE –100 –50µA 40 0 2 VCE=–5V Ta=25˚C –140 200 160 –160 Collector current IC (mA) –140 Collector current IC (mA) Collector power dissipation PC (mW) 240 10 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 18 16 14 12 10 8 6 4 2 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2SA1034, 2SA1035 Transistor NV — VCE NV — VCE 160 Rg=100kΩ 100 80 22kΩ 40 4.7kΩ 240 Rg=100kΩ 180 120 22kΩ 60 –10 –30 0 –1 –100 Collector to emitter voltage VCE (V) –3 –30 180 Rg=100kΩ 22kΩ – 0.03 – 0.3 –1 VCE=–10V GV=80dB Function=RIAA 120 100 80 60 IC=–1mA 40 240 180 120 60 IC=–1mA – 0.1mA 20 –1 – 0.3 300 VCE=–10V GV=80dB Function=FLAT – 0.5mA – 0.1mA 0 Collector current IC (mA) – 0.1 Collector current IC (mA) NV — Rg – 0.5mA 4.7kΩ – 0.1 22kΩ 40 0 – 0.01 –100 Noise voltage NV (mV) Noise voltage NV (mV) Noise voltage NV (mV) –10 140 240 – 0.03 60 20 160 VCE=–10V GV=80dB Function=RIAA 0 – 0.01 Rg=100kΩ 80 NV — Rg 300 60 100 Collector to emitter voltage VCE (V) NV — IC 120 120 4.7kΩ 4.7kΩ 20 –3 VCE=–10V GV=80dB Function=FLAT 140 Noise voltage NV (mV) Noise voltage NV (mV) Noise voltage NV (mV) 120 60 160 IC=–1mA GV=80dB Function=RIAA IC=–1mA GV=80dB Function=FLAT 140 0 –1 NV — IC 300 0 1 3 10 30 100 Signal source resistance Rg (kΩ) 1 3 10 30 100 Signal source resistance Rg (kΩ) 3