Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit: mm For power switching 1.05 2.5±0.1 ±0.05 4.0 0.8 ● 1.0 1.0 14.5±0.5 0.65 max. +0.1 0.45–0.05 2.5±0.5 * (Ta=25˚C) 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –400 V Collector to emitter voltage VCEO –400 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics 0.45+–0.1 0.05 (HW type) (Ta=25˚C) Parameter Symbol Collector cutoff current 2.5±0.5 2 2.5±0.1 ■ Absolute Maximum Ratings +0.1 ● High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. 0.45–0.05 ● 0.2 ■ Features ● (1.45) 0.5 4.5±0.1 0.15 6.9±0.1 0.7 max Unit ICBO VCB = –400V, IE = 0 Conditions min typ –1 µA ICEO VCE = –100V, IB = 0 –1 µA Emitter cutoff current IEBO VBE = –5V, IC = 0 –1 µA Collector to emitter voltage VCEO IC = –1mA, IB = 0 hFE1*1 VCE = –5V, IC = –50mA 80 hFE2 VCE = –5V, IC = –300mA*2 10 VCE(sat) IC = –100mA, IB = –10mA*2 – 0.25 – 0.5 Base to emitter saturation voltage VBE(sat) IC = –100mA, IB = –10mA*2 – 0.8 –1.2 Transition frequency fT VCB = –10V, IE = 0.1A, f = 1MHz*2 25 Turn-on time ton IC = –100mA, RL = 1.5kΩ 0.4 1.0 µs Storage time tstg IB1 = –10mA, IB2 = 10mA 5.5 6.5 µs Collector current fall time tf VCC = –150V 0.5 1.0 µs Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 40 pF Forward current transfer ratio Collector to emitter saturation voltage –400 V 280 FE1 Rank classification Rank P Q hFE1 80 ~ 160 130 ~ 280 V MHz *2 *1h V Pulse measurement 1 2SB1488 Transistor PC — Ta IC — VCE 1.0 Ta=25˚C – 0.9 – 0.8 – 0.7 0.8 – 0.6 0.6 IB=100mA – 0.5 – 0.4 0.4 50mA – 0.2 10mA 5mA – 0.1 1mA 0.5mA 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 25˚C Ta=–25˚C 100˚C – 0.1 – 0.03 1000 –1 –3 25˚C 300 Ta=100˚C 100 –25˚C 30 10 3 –1 Collector current IC (A) Cob — VCB 100 80 70 60 50 40 30 20 Pulsed tw=1ms Duty cycle=1% IC/IB=5(–IB1=IB2) VCC=–100V Ta=25˚C 30 Switching time ton,tstg,tf (µs) IE=0 f=1MHz Ta=25˚C 10 tstg 3 1 tf 0.3 ton 0.1 0.03 10 0.01 –3 –10 –30 –100 Collector to base voltage VCB (V) –10 VCE=–10V Ta=25˚C 300 100 30 10 3 1 0 – 0.2 – 0.4 – 0.6 – 0.8 Collector current IC (A) 0.1 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) ton, tstg, tf — IC 100 –3 0.3 1 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 –1 Collector current IC (A) fT — IC VCE=–5V Collector current IC (A) 90 –1 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Transition frequency fT (MHz) –3 – 0.3 Collector output capacitance Cob (pF) –12 1000 –10 0 –1 –10 3000 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –25˚C – 0.03 –8 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) IC/IB=5 25˚C –3 hFE — IC –100 Ta=100˚C –10 Collector to emitter voltage VCE (V) VBE(sat) — IC –1 –6 –30 – 0.1 0.1mA 0 0 IC/IB=5 – 0.3 – 0.3 0.2 Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC –100 –1.0 Collector current IC (mA) Collector power dissipation PC (W) 1.2 – 1.0 –1