Transistor 2SD2258 (Tentative) Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 ● 14.5±0.5 Darlington connection. High foward current transfer ratio hFE. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5±0.5 2.5±0.5 2 3 2.5±0.1 1 +0.1 ● 0.65 max. 0.45–0.05 ● 1.0 1.0 ■ Features (1.45) 0.8 0.2 For low-frequency output amplification 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 ■ Absolute Maximum Ratings * (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) Internal Connection C B ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol min E typ max Unit Collector cutoff current ICBO VCB = 45V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 4V, IC = 0 0.1 µA Collector to base voltage VCBO IC = 100µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 100µA, IC = 0 5 V VCE = 10V, IC = 1A 4000 *1 Conditions ≈200Ω Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 1mA*2 1.8 V Base to emitter saturation voltage VBE(sat) IC = 1A, IB = 1mA*2 2.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz *1h 40000 150 MHz *2 FE Rank classification Rank hFE Q R Pulse measurement S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 1 2SD2258 Transistor VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 200 IC/IB=1000 10 3 25˚C 1 Ta=–25˚C 100˚C 0.3 0.1 0.03 0.01 0.01 Ambient temperature Ta (˚C) 0.03 0.1 0.3 24 25˚C –25˚C 103 IE=0 f=1MHz Ta=25˚C 20 0.1 0.3 1 3 16 12 8 4 1 3 10 30 IC/IB=1000 10 25˚C 3 Ta=–25˚C 1 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 Collector current IC (A) 0 0.03 Collector current IC (A) 2 Collector output capacitance Cob (pF) Forward current transfer ratio hFE TC=100˚C 102 0.01 3 Cob — VCB VCE=10V 104 1 Collector current IC (A) hFE — IC 105 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) PC — Ta 1.2 100 Collector to base voltage VCB (V) 3