Transistor 2SC5419 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 ■ Features 0.65 max. 14.5±0.5 ● 1.0 1.0 ● (1.45) 0.8 0.2 High collector to emitter voltage VCEO. High transition frequency fT. Allowing supply with the radial taping. ● 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 Symbol Ratings +0.1 0.45–0.05 2.5±0.5 Unit *1 Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO Peak collector current ICP Collector current Collector power dissipation Junction temperature Tj Storage temperature Tstg 7 V 100 mA IC 70 mA PC*1 1.0 W 150 ˚C –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 2.5±0.5 2 3 2.5±0.1 1 +0.1 Parameter (Ta=25˚C) 0.45–0.05 ■ Absolute Maximum Ratings Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. or more, and the board 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 1 µA Collector cutoff current ICEO VCE = 120V, IB = 0 Collector to emitter voltage VCEO IC = 100µA, IB = 0 300 V Emitter to base voltage VEBO IE = 1µA, IC = 0 7 V VCE = 10V, IC = 5mA 30 *1 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz *1h FE 220 1.2 50 V MHz 10 pF Rank classification Rank P Q R hFE 30 ~ 100 60 ~ 150 100 ~ 220 1 2SC5419 Transistor PC — Ta IC — VCE 1.6 1.2 0.8 0.4 120 100 80 60 0.4mA 40 0.2mA 60 80 100 120 140 160 100 80 60 40 20 0 0.8 1.2 1.6 2 4 6 8 10 12 2.0 IC/IB=10 3 Ta=75˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.001 3 10 30 100 300 1000 –25˚C 150 100 50 0 Collector output capacitance Cob (pF) 25˚C 200 f=1MHz IE=0 Ta=25˚C 10 8 6 4 2 0 30 100 300 Collector current IC (mA) 1000 1.0 1.2 1200 VCE=10V Ta=25˚C 800 600 400 1 3 10 30 0 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) Cob — VCB 250 0.8 0 1 12 VCE=10V 0.6 200 Collector current IC (mA) Ta=75˚C 0.4 0.003 hFE — IC 10 0.2 Base to emitter voltage VBE (V) 1000 1 2.4 300 3 0 IB — VBE 10 Base current IB (mA) 1 40 Collector to emitter voltage VCE (V) Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 0.4 60 VCE(sat) — IC 120 –25˚C 0 0 IC — IB 0 Ta=75˚C 80 20 Base current IB (µA) 40 Ambient temperature Ta (˚C) Collector current IC (mA) IB=2.0mA 0 20 25˚C 100 20 0 Forward current transfer ratio hFE VCE=10V Ta=25˚C 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VBE 120 Collector current IC (mA) Collector power dissipation PC (W) 2.0 100 Collector to base voltage VCB (V)