Transistors 2SB1322A Silicon PNP epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 14.5±0.5 0.65 max. +0.1 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −50 V Emitter to base voltage VEBO −5 V Peak collector current ICP −1.5 A Collector current IC −1 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 2.5±0.5 2 +0.1 2.5±0.5 Symbol 0.45−0.05 0.45−0.05 3 2.5±0.1 Parameter 1.0 1.0 ■ Features • Allowing supply with the radial taping (1.45) 0.5 4.5±0.1 For low-frequency power amplification Complementary to 2SD1994A Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT2 Type Package 1.2±0.1 Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion 0.65 max. 0.45+− 0.1 0.05 (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit − 0.1 µA Collector cutoff current ICBO VCB = −20 V, IE = 0 Collector to base voltage VCBO IC = −10 µA, IE = 0 −60 V Collector to emitter voltage VCEO IC = −2 mA, IB = 0 −50 V Emitter to base voltage VEBO IE = −10 µA, IC = 0 −5 V Forward current transfer ratio *1 hFE1 *2 hFE2 VCE = −10 V, IC = −500 mA 85 VCE = −5 V, IC = −1 A 50 340 Collector to emitter saturation voltage *1 VCE(sat) IC = −500 mA, IB = −50 mA − 0.4 V Base to emitter saturation voltage *1 VBE(sat) IC = −500 mA, IB = −50 mA −1.2 V Transition frequency fT Collector output capacitance Cob VCB = −10 V, IE = 50 mA, f = 200 MHz 200 VCB = −10 V, IE = 0, f = 1 MHz 20 MHz 30 pF Note) *1: Pulse measurement *2: Rank classification Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SB1322A Transistors PC Ta IC VCE 0.8 Ta = 25°C −9 mA −8 mA −7 mA −1.0 −6 mA − 0.75 0.6 −5 mA −4 mA −3 mA − 0.5 0.4 −2 mA − 0.25 0.2 20 40 60 0 80 100 120 140 160 –2 VCE(sat) IC −10 −3 −1 Ta = 100°C 25°C −25°C −3 −10 −2 −4 −3 25°C Ta = −25°C −1 −6 −8 −10 −12 hFE IC −10 100°C − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 500 VCE = −10 V 400 300 Ta = 100°C 25°C 200 −25°C 100 140 120 100 80 60 40 20 3 5 10 20 30 50 Emitter current IE (mA) −3 0 − 0.01 − 0.03 − 0.1 − 0.3 −10 100 40 30 20 10 0 −1 −3 −10 −30 −3 −10 VCER RBE IE = 0 f = 1 MHz Ta = 25°C 50 −1 Collector current IC (A) Cob VCB 60 160 2 −1 Collector current IC (A) Collector output capacitance Cob (pF) Transition frequency fT (MHz) 0 Base current IB (mA) IC / IB = 10 fT IE 2 0 –10 − 0.1 VCB = −10 V Ta = 25°C 1 –8 −30 Collector current IC (A) 0 − 0.2 − 0.03 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 180 –6 − 0.3 − 0.03 200 –4 −100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) IC / IB = 10 − 0.1 − 0.4 VBE(sat) IC −30 − 0.3 − 0.6 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) −100 − 0.8 Forward current transfer ratio hFE 0 −1.0 −1 mA 0 0 VCE = −10 V TC = 25°C IB = −10 mA −1.25 Collector current IC (A) 1.0 −1.2 Collector current IC (A) Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness. IC IB −1.5 −100 Collector to base voltage VCB (V) −120 Collector to emitter voltage VCER (V) Collector power dissipation PC (W) 1.2 IC = −10 mA Ta = 25°C −100 −80 −60 −40 −20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) Transistors 2SB1322A ICEO Ta 104 Area of safe operation (ASO) −10 VCE = −10 V −3 Collector current IC (A) ICEO (Ta) ICEO (Ta = 25°C) 103 102 −1 Single pulse Ta = 25°C ICP IC t = 10 ms − 0.3 t=1s − 0.1 − 0.03 − 0.01 10 − 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) − 0.001 − 0.1 − 0.3 −1 −3 −10 −30 −100 Collector to emitter voltage VCE (V) 3