PANASONIC 2SB1322A

Transistors
2SB1322A
Silicon PNP epitaxial planer type
Unit: mm
1.05 2.5±0.1
±0.05
0.15
6.9±0.1
4.0
0.8
0.2
0.7
14.5±0.5
0.65 max.
+0.1
■ Absolute Maximum Ratings Ta = 25°C
Rating
Unit
Collector to base voltage
VCBO
−60
V
Collector to emitter voltage
VCEO
−50
V
Emitter to base voltage
VEBO
−5
V
Peak collector current
ICP
−1.5
A
Collector current
IC
−1
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1
2.5±0.5
2
+0.1
2.5±0.5
Symbol
0.45−0.05
0.45−0.05
3
2.5±0.1
Parameter
1.0 1.0
■ Features
• Allowing supply with the radial taping
(1.45)
0.5
4.5±0.1
For low-frequency power amplification
Complementary to 2SD1994A
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
1.2±0.1
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
0.65
max.
0.45+− 0.1
0.05
(HW Type)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
− 0.1
µA
Collector cutoff current
ICBO
VCB = −20 V, IE = 0
Collector to base voltage
VCBO
IC = −10 µA, IE = 0
−60
V
Collector to emitter voltage
VCEO
IC = −2 mA, IB = 0
−50
V
Emitter to base voltage
VEBO
IE = −10 µA, IC = 0
−5
V
Forward current transfer ratio
*1
hFE1
*2
hFE2
VCE = −10 V, IC = −500 mA
85
VCE = −5 V, IC = −1 A
50
340
Collector to emitter saturation voltage *1
VCE(sat)
IC = −500 mA, IB = −50 mA
− 0.4
V
Base to emitter saturation voltage *1
VBE(sat)
IC = −500 mA, IB = −50 mA
−1.2
V
Transition frequency
fT
Collector output capacitance
Cob
VCB = −10 V, IE = 50 mA, f = 200 MHz
200
VCB = −10 V, IE = 0, f = 1 MHz
20
MHz
30
pF
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No-rank
hFE1
85 to 170
120 to 240
170 to 340
85 to 340
Product of no-rank is not classified and have no indication for rank.
1
2SB1322A
Transistors
PC  Ta
IC  VCE
0.8
Ta = 25°C
−9 mA
−8 mA
−7 mA
−1.0
−6 mA
− 0.75
0.6
−5 mA
−4 mA
−3 mA
− 0.5
0.4
−2 mA
− 0.25
0.2
20
40
60
0
80 100 120 140 160
–2
VCE(sat)  IC
−10
−3
−1
Ta = 100°C
25°C
−25°C
−3
−10
−2
−4
−3
25°C
Ta = −25°C
−1
−6
−8
−10
−12
hFE  IC
−10
100°C
− 0.01
− 0.01 − 0.03 − 0.1 − 0.3
500
VCE = −10 V
400
300
Ta = 100°C
25°C
200
−25°C
100
140
120
100
80
60
40
20
3
5
10
20 30 50
Emitter current IE (mA)
−3
0
− 0.01 − 0.03 − 0.1 − 0.3
−10
100
40
30
20
10
0
−1
−3
−10
−30
−3
−10
VCER  RBE
IE = 0
f = 1 MHz
Ta = 25°C
50
−1
Collector current IC (A)
Cob  VCB
60
160
2
−1
Collector current IC (A)
Collector output capacitance Cob (pF)
Transition frequency fT (MHz)
0
Base current IB (mA)
IC / IB = 10
fT  IE
2
0
–10
− 0.1
VCB = −10 V
Ta = 25°C
1
–8
−30
Collector current IC (A)
0
− 0.2
− 0.03
− 0.01
− 0.01 − 0.03 − 0.1 − 0.3
180
–6
− 0.3
− 0.03
200
–4
−100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
IC / IB = 10
− 0.1
− 0.4
VBE(sat)  IC
−30
− 0.3
− 0.6
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C)
−100
− 0.8
Forward current transfer ratio hFE
0
−1.0
−1 mA
0
0
VCE = −10 V
TC = 25°C
IB = −10 mA
−1.25
Collector current IC (A)
1.0
−1.2
Collector current IC (A)
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness.
IC  IB
−1.5
−100
Collector to base voltage VCB (V)
−120
Collector to emitter voltage VCER (V)
Collector power dissipation PC (W)
1.2
IC = −10 mA
Ta = 25°C
−100
−80
−60
−40
−20
0
0.1
0.3
1
3
10
30
100
Base to emitter resistance RBE (kΩ)
Transistors
2SB1322A
ICEO  Ta
104
Area of safe operation (ASO)
−10
VCE = −10 V
−3
Collector current IC (A)
ICEO (Ta)
ICEO (Ta = 25°C)
103
102
−1
Single pulse
Ta = 25°C
ICP
IC
t = 10 ms
− 0.3
t=1s
− 0.1
− 0.03
− 0.01
10
− 0.003
1
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
− 0.001
− 0.1 − 0.3
−1
−3
−10
−30
−100
Collector to emitter voltage VCE (V)
3