Transistors 2SD2177 Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 ■ Features • Low collector to emitter saturation voltage VCE(sat) • Ccomplementary pair with 2SB1434 • Allowing supply with the radial taping (1.45) 0.5 4.5±0.1 For low-frequency output amplification Complementary to 2SB1434 14.5±0.5 0.65 max. +0.1 Parameter 3 2.5±0.1 ■ Absolute Maximum Ratings Ta = 25°C 2.5±0.5 2 +0.1 2.5±0.5 1 0.45−0.05 0.45−0.05 Symbol Rating Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A Collector current IC 2 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+− 0.1 0.05 Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit 0.1 µA Collector cutoff current ICBO VCB = 20 V, IE = 0 Collector to base voltage VCBO IC = 10 µA, IE = 0 50 Collector to emitter voltage VCEO IC = 1 mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 5 V Forward current transfer ratio *1 hFE1 *2 VCE = 2 V, IC = 200 mA 120 hFE2 VCE = 2 V, IC = 1 A 80 Collector to emitter saturation voltage *1 VCE(sat) IC = 1 A, IB = 50 mA 0.15 0.3 V Base to emitter saturation voltage *1 VBE(sat) IC = 1 A, IB = 50 mA 0.85 1.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 110 VCB = 10 V, IE = 0, f = 1 MHz 23 Transition frequency fT Collector output capacitance Cob V 340 MHz 35 pF Note) *1: Pulse measurement *2: Rank classification Rank R S No-rank hFE1 120 to 240 170 to 340 120 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SD2177 Transistors Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 1.0 VCE(sat) IC Ta = 25°C 2.0 Collector current IC (A) Collector power dissipation PC (W) IC VCE 2.4 0.8 0.6 0.4 1.6 IB = 8 mA 1.2 7 mA 6 mA 5 mA 0.8 4 mA 3 mA 0.4 0.2 2 mA 0 20 40 60 80 100 120 140 160 0 2 VBE(sat) IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 0.3 Ta = 100°C 0.1 25°C −25°C 0.03 0.01 10 0.001 0.01 0.03 0.1 0.3 10 3 25°C Ta = −25°C 100°C 0.3 0.1 3 10 fT IE 200 400 300 1 Collector current IC (A) VCB = 10 V Ta = 25°C VCE = 2 V Ta = 100°C 25°C 200 −25°C 100 160 120 80 40 0.03 0.1 0.3 1 3 10 Cob VCB 60 IE = 0 f = 1 MHz Ta = 25°C 50 40 30 20 10 0 1 3 10 30 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Collector current IC (A) Collector output capacitance Cob (pF) 1 hFE IC IC / IB = 10 0.01 0.01 0.03 100 Collector to base voltage VCB (V) 2 8 500 30 1 6 IC / IB = 20 3 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) 100 4 Transition frequency fT (MHz) 0 10 0.003 1 mA 0 Collector to emitter saturation voltage VCE(sat) (V) PC Ta 1.2 10 0 −1 −3 −10 −30 Emitter current IE (mA) −100