Silicon Junction FETs (Small Signal) 2SK374 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low noise-figure (NF) ● High gate to drain voltage VGDO ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 2.9 –0.05 ■ Features Ratings Unit Drain to Source voltage Parameter VDSX Symbol 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage VGSO −55 V Drain current ID 30 mA Gate current IG 10 mA Allowable power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C +0.1 0.16 –0.06 0.1 to 0.3 0.4±0.2 0 to 0.1 ■ Absolute Maximum Ratings (Ta = 25°C) 0.8 +0.2 1.1 –0.1 2 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): 2B ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol IDSS* Gate to Source leakage current IGSS VGS = −30V, VDS = 0 Gate to Drain voltage VGDC IG = −100µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = 10V, ID = 10µA Mutual conductance gm VDS = 10V, ID = 5mA, f = 1kHz Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure * Conditions Drain to Source cut-off current NF VDS = 10V, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100kΩ f = 100Hz min typ 1 max Unit 20 mA −10 nA −55 −80 2.5 7.5 mS 6.5 pF 1.9 pF 2.5 dB V −5 V IDSS rank classification Runk P Q R S IDSS (mA) 1 to 3 2 to 6.5 5 to 12 10 to 20 Marking Symbol 2BP 2BQ 2BR 2BS 1 Silicon Junction FETs (Small Signal) PD Ta ID VDS 240 ID VDS 5 10 Ta=25˚C 200 120 80 8 3 VGS=0 – 0.2V – 0.4V 2 – 0.6V 1 40 Drain current ID (mA) 160 VGS=0V – 0.2V 6 – 0.4V 4 – 0.6V – 0.8V 2 – 0.8V –1.0V –1.0V 0 –1.2V 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 0.1 0.2 0.3 0.4 0.5 0.6 0 Drain to source voltage VDS (V) ID VGS Ta=–25˚C 25˚C 4 75˚C 10 12 gm ID VDS=10V Ta=25˚C Mutual conductance gm (mS) Mutual conductance gm (mS) 10 8 VDS=10V Ta=25˚C VDS=10V 12 6 12 14 6 4 Drain to source voltage VDS (V) 12 8 2 gm VGS 16 Drain current ID (mA) Ta=25˚C 4 Drain current ID (mA) Allowable power dissipation PD (mW) 2SK374 10 8 6 4 2 10 8 IDSS=7.5mA 6 4 2 2 0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 0 –2.0 –1.2 Gate to source voltage VGS (V) 0 –1.6 12 10 8 6 4 2 0 6 8 10 12 Drain to source voltage VDS (V) 2 Output capacitance (Common source) Coss (pF) Input capacitance (Common source) Ciss (pF) VGS=0 Ta=25˚C 4 – 0.4 0 Coss VDS 14 2 – 0.8 Gate to source voltage VGS (V) Ciss VDS 16 0 –1.2 8 VGS=0 Ta=25˚C 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V) 0 2 4 6 8 Drain current ID (mA) 10