PANASONIC 2SK620

Silicon MOS FETs (Small Signal)
2SK620
Silicon N-Channel MOS FET
For switching
unit: mm
+0.2
2.8 –0.3
■ Features
+0.25
0.65±0.15
1.45
0.95
1.5 –0.05
1
0.95
3
+0.1
0.4 –0.05
+0.2
2.9 –0.05
● High-speed switching
● Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
1.9±0.2
0.65±0.15
Unit
V
V
mA
mA
mW
°C
°C
+0.1
0.1 to 0.3
0.4±0.2
0 to 0.1
Ratings
50
8
100
200
150
150
−55 to +150
Symbol
VDSS
VGSO
ID
IDP
PD
Tch
Tstg
0.8
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
+0.2
1.1 –0.1
■ Absolute Maximum Ratings (Ta = 25°C)
0.16 –0.06
2
1: Gate
2: Source
3: Drain
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol: 3N
Internal Connection
D
G
S
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Conditions
VDS = 10V, VGS = 0
VGS = 8V, VDS = 0
ID = 100µA, VGS = 0
ID = 100µA, VDS = VGS
ID = 20mA, VGS = 5V
ID = 20mA, VDS = 5V, f = 1kHz
min
typ
50
1.5
20
3.5
50
30
15
5
1
VDS = 5V, VGS = 0, f = 1MHz
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
max
10
50
10
20
Unit
µA
nA
V
V
Ω
mS
pF
pF
pF
ns
ns
ton, toff measurement circuit
Vout
VGS = 5V
50Ω
200Ω
100µF
*
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
Ciss
Coss
Crss
ton*
toff*
90%
10%
Vin
VDD = 5V
Vout
10%
90%
ton
toff
1
Silicon MOS FETs (Small Signal)
2SK620
PD  Ta
ID  VDS
120
60
100
Drain current ID (mA)
200
160
120
80
VGS=6.0V
5.0V
60
20
0
0
20
40
60
4.5V
40
40
0
5.5V
80
80 100 120 140 160
4.0V
3.5V
3.0V
2.5V
0
Ambient temperature Ta (˚C)
2
6
4
Coss
2
Crss
3
10
100
VIN  IO
100
VO=5V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
10
0
2
100
Ta=–25˚C
80
25˚C
75˚C
60
40
100
0
2
4
6
4
6
8
10
12
Gate to source voltage VGS (V)
RDS(on)  VGS
0
30
20
0
20
0
30
12
VDS=5V
Ta=25˚C
Drain current ID (mA)
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
8
Drain to source voltage VDS (V)
Input voltage VIN (V)
10
40
ID  VGS
Ciss
1
2
8
120
VGS=0
f=1MHz
Ta=25˚C
10
6
VDS=5V
Ta=25˚C
50
Drain to source voltage VDS (V)
Ciss, Coss, Crss  VDS
12
4
8
10
12
Gate to source voltage VGS (V)
Drain to source ON-resistance RDS(on) (Ω)
Allowable power dissipation PD (mW)
Ta=25˚C
Forward transfer admittance |Yfs| (mS)
240
| Yfs |  VGS
120
ID=20mA
100
80
60
Ta=75˚C
40
25˚C
–25˚C
20
0
0
2
4
6
8
10
12
Gate to source voltage VGS (V)