PANASONIC 2SK2211

Silicon MOS FETs (Small Signal)
2SK2211
Silicon N-Channel MOS FET
Unit : mm
For switching
1.5±0.1
4.5±0.1
0.4±0.08
2.5±0.1
0.4 max.
45˚
+0.1
• Low ON-resistance RDS(ON)
• High-speed switching
• Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
1.0–0.2
■ Features
4.0+0.25
–0.20
2.6±0.1
1.6±0.2
0.5±0.08
0.4±0.04
1.5±0.1
3.0±0.15
■ Absolute Maximum Ratings Ta = 25°C
Parameter
3
2
1
Symbol
Ratings
Unit
Drain to Source voltage
VDS
30
V
Gate to Source voltage
VGSO
±20
V
ID
±1
A
IPD
±2
A
PD
1
W
Marking Symbol: 2M
Internal Connection
Drain current
Max drain current
Allowable power dissipation
*
Channel temperature
Pch
150
°C
Storage temperature
Tstg
−55 to +150
°C
marking
1: Gate
2: Drain
3: Source
Mini-Power Type Package (3-pin)
Note) * PC board: Copper foil of the drain portion should have a area of
1 cm2 or more and the board thickness should be 1.7 mm.
D
G
S
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain to Source cut-off current
IDSS
VDS = 25 V, VGS = 0
10
µA
Gate to Source leakage current
IGSS
VGS = ±15 V, VDS = 0
±10
µA
Drain to Source breakdown voltage
VDSS
ID = 0.1 mA, VGS = 0
30
V
Gate to Source voltage
VGSS
IGS = 0.1 mA, VDS = 0
±20
V
0.8
Gate threshold voltage
Drain to Source ON-resistance *
Forward transfer admittance
Vth
VDS = 5 V, ID = 1 mA
RDS(ON)1
VGS = 4 V, ID = 0.5 A
RDS(ON)2
VGS = 10 V, ID = 0.5 A
Yfs
VDS = 10 V, ID = 0.5 A
Input capacitance (Common Source)
Ciss
Output capacitance (Common Source)
Coss
Reverse transfer capacitance (Common Source)
Crss
Turn-on time
tON
Fall time
Turn-off time (delay time)
tf
tOFF
VDS = 10 V, VGS = 0, f = 1 MHz
2
V
0.48
0.75
Ω
0.35
0.6
Ω
0.5
S
87
pF
69
pF
23
pF
VGS = 10 V, ID = 0.5 A, VDD = 10 V
12
ns
RL = 10 Ω
160
ns
60
ns
Note) *: Pulse measurement
1
2SK2211
Silicon MOS FETs (Small Signal)
ID  VDS
ID  VDS
3.0
2.5
Drain to source ON-resistance RDS(ON) (Ω)
VDS =10 V
Ta = 25°C
Ta = 25°C
2.5
VGS = 3.5 V
2.0
1.5
3.0 V
1.0
Drain current ID (A)
Drain current ID (A)
RDS  VDS
1.6
3.0
2.0
1.5
1.0
2.5 V
0.5
0.5
2.0 V
0
0
2
4
6
8
10
0
Drain to source voltage VDS (V)
1
2
RDS  ID
5
1.0
0.8
VGS = 4 V
10 V
0.2
1.0
1.5
0.4
0.2
0
2
2.0
Drain current ID (A)
2.5
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
1.5
6
8
10
12
Ciss, Coss, Crss  VDS
VDS = 10 V
f = 1 kHz
Ta = 25°C
1.4
4
Gate to source voltage VGS (V)
0
0.5
0.6
6
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
Forward transfer admittance |Yfs| (S)
Drain to source ON-resistance RDS(ON) (Ω)
4
Ta = 25°C
1.2
0
0.8
Yfs  ID
0
2
3
1.6
0.4
1.0
Gate to source voltage VGS (V)
1.4
0.6
1.2
0
0
12
ID = 0.5 A
Ta = 25°C
1.4
2.0
Drain current ID (A)
2.5
140
f = 1 MHz
Ta = 25°C
120
100
80
Ciss
60
Coss
40
20
Crss
0
0.3
1
3
10
30
100
300
Drain to source voltage VDS (V)