PANASONIC 2SK2593

Silicon Junction FETs (Small Signal)
2SK2593
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
unit: mm
1.6±0.15
0.4
0.8±0.1
0.4
Parameter
Unit
VDSX
Symbol
55
V
Gate to Drain voltage
VGDO
−55
V
Gate to Source voltage
VGSO
−55
V
Drain current
ID
±30
mA
Gate current
IG
10
mA
Allowable power dissipation
PD
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
+0.1
0.5
1.0±0.1
0.5
1.6±0.1
+0.1
0.15–0.05
0 to 0.1
Ratings
Drain to Source voltage
3
0.45±0.1 0.3
■ Absolute Maximum Ratings (Ta = 25°C)
1
2
0.75±0.15
● Low noies, high gain
● High gate to drain voltage VGDO
● Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
0.2–0.05
■ Features
1: Source
2: Drain
3: Gate
0.2±0.1
EIAJ: SC-75
SS-Mini Type Package (3-pin)
Marking Symbol (Example): 2B
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
IDSS*
Gate to Source leakage current
IGSS
VGS = −30V, VDS = 0
Gate to Drain voltage
VGDS
IG = −100µA, VDS = 0
Gate to Source cut-off voltage
VGSC
VDS = 10V, ID = 10µA
Forward transfer admittance
| Yfs |
VDS = 10V, ID = 5mA, f = 1kHz
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
Noise figure
*
Conditions
Drain to Source cut-off current
NF
VDS = 10V, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, Rg = 100kΩ
f = 100Hz
min
typ
1
max
Unit
20
mA
10
nA
55
80
V
2.5
7.5
mS
6.5
pF
1.9
pF
2.5
dB
−5
V
IDSS rank classification
Runk
P
Q
R
S
IDSS (mA)
1 to 3
2 to 6.5
5 to 12
10 to 20
Marking Symbol
2BP
2BQ
2BR
2BS
1
Silicon Junction FETs (Small Signal)
2SK2593
PD  Ta
ID  VDS
5
10
Ta=25˚C
125
75
50
8
3
VGS=0
– 0.2V
– 0.4V
2
– 0.6V
1
25
– 0.2V
6
– 0.4V
4
– 0.6V
– 0.8V
2
– 0.8V
– 1.0V
– 1.2V
0
20
40
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
1
2
3
4
5
6
0
Drain to source voltage VDS (V)
ID  VGS
10
Ta=–25˚C
25˚C
4
75˚C
2
0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
VDS=10V
Ta=25˚C
10
8
6
4
2
0
–2.0
–1.2
Gate to source voltage VGS (V)
12
10
8
6
4
2
0
0
2
4
6
8
10
8
IDSS=7.5mA
6
4
2
–1.2
– 0.8
– 0.4
0
0
Gate to source voltage VGS (V)
10
12
Drain to source voltage VDS (V)
Output capacitance (Common source) Coss (pF)
VGS=0
Ta=25˚C
12
VDS=10V
Ta=25˚C
2
VGS=0
Ta=25˚C
7
6
5
4
3
2
1
0
2
4
6
8
6
8
10
Crss  VDS
8
0
4
Drain current ID (mA)
Coss  VDS
14
10
0
–1.6
Ciss  VDS
16
8
| Yfs |  ID
10
12
Drain to source voltage VDS (V)
Reverse transfer capacitance (Common source) Crss (pF)
0
6
12
Forward transfer admittance |Yfs| (mS)
12
Forward transfer admittance |Yfs| (mS)
VDS=10V
Ta=25˚C
14
6
4
Drain to source voltage VDS (V)
12
8
2
| Yfs |  VGS
16
Drain current ID (mA)
VGS=0V
– 1.0V
0
Input capacitance (Common source) Ciss (pF)
Drain current ID (mA)
100
0
2
Ta=25˚C
4
Drain current ID (mA)
Allowable power dissipation PD (mW)
150
ID  VDS
8
VGS=0
Ta=25˚C
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Drain to source voltage VDS (V)