Silicon Junction FETs (Small Signal) 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Parameter Unit VDSX Symbol 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage VGSO −55 V Drain current ID ±30 mA Gate current IG 10 mA Allowable power dissipation PD 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C +0.1 0.5 1.0±0.1 0.5 1.6±0.1 +0.1 0.15–0.05 0 to 0.1 Ratings Drain to Source voltage 3 0.45±0.1 0.3 ■ Absolute Maximum Ratings (Ta = 25°C) 1 2 0.75±0.15 ● Low noies, high gain ● High gate to drain voltage VGDO ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.2–0.05 ■ Features 1: Source 2: Drain 3: Gate 0.2±0.1 EIAJ: SC-75 SS-Mini Type Package (3-pin) Marking Symbol (Example): 2B ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol IDSS* Gate to Source leakage current IGSS VGS = −30V, VDS = 0 Gate to Drain voltage VGDS IG = −100µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = 10V, ID = 10µA Forward transfer admittance | Yfs | VDS = 10V, ID = 5mA, f = 1kHz Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure * Conditions Drain to Source cut-off current NF VDS = 10V, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100kΩ f = 100Hz min typ 1 max Unit 20 mA 10 nA 55 80 V 2.5 7.5 mS 6.5 pF 1.9 pF 2.5 dB −5 V IDSS rank classification Runk P Q R S IDSS (mA) 1 to 3 2 to 6.5 5 to 12 10 to 20 Marking Symbol 2BP 2BQ 2BR 2BS 1 Silicon Junction FETs (Small Signal) 2SK2593 PD Ta ID VDS 5 10 Ta=25˚C 125 75 50 8 3 VGS=0 – 0.2V – 0.4V 2 – 0.6V 1 25 – 0.2V 6 – 0.4V 4 – 0.6V – 0.8V 2 – 0.8V – 1.0V – 1.2V 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 1 2 3 4 5 6 0 Drain to source voltage VDS (V) ID VGS 10 Ta=–25˚C 25˚C 4 75˚C 2 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 VDS=10V Ta=25˚C 10 8 6 4 2 0 –2.0 –1.2 Gate to source voltage VGS (V) 12 10 8 6 4 2 0 0 2 4 6 8 10 8 IDSS=7.5mA 6 4 2 –1.2 – 0.8 – 0.4 0 0 Gate to source voltage VGS (V) 10 12 Drain to source voltage VDS (V) Output capacitance (Common source) Coss (pF) VGS=0 Ta=25˚C 12 VDS=10V Ta=25˚C 2 VGS=0 Ta=25˚C 7 6 5 4 3 2 1 0 2 4 6 8 6 8 10 Crss VDS 8 0 4 Drain current ID (mA) Coss VDS 14 10 0 –1.6 Ciss VDS 16 8 | Yfs | ID 10 12 Drain to source voltage VDS (V) Reverse transfer capacitance (Common source) Crss (pF) 0 6 12 Forward transfer admittance |Yfs| (mS) 12 Forward transfer admittance |Yfs| (mS) VDS=10V Ta=25˚C 14 6 4 Drain to source voltage VDS (V) 12 8 2 | Yfs | VGS 16 Drain current ID (mA) VGS=0V – 1.0V 0 Input capacitance (Common source) Ciss (pF) Drain current ID (mA) 100 0 2 Ta=25˚C 4 Drain current ID (mA) Allowable power dissipation PD (mW) 150 ID VDS 8 VGS=0 Ta=25˚C 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V)