PANASONIC 2SK657

Silicon MOS FETs (Small Signal)
2SK657
Silicon N-Channel MOS FET
For switching
unit: mm
6.9±0.1
2.5±0.1
1.0
1.0
1.5 R0.9
R0.9
0.85
Ratings
50
8
±100
±200
400
150
−55 to +150
Symbol
VDSS
VGSO
ID
IDP
PD
Tch
Tstg
Unit
V
V
mA
mA
mW
°C
°C
3
2
2.5
0.45±0.05
1
2.5
1.25±0.05
0.55±0.1
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
4.5±0.1
0.
7
R
1.0±0.1
0.4
1.5
2.4±0.2 2.0±0.2 3.5±0.1
● High-speed switching
● M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
4.1±0.2
■ Features
1: Gate
2: Drain
3: Source
EIAJ: SC-71
M Type Mold Package
Internal Connection
D
G
S
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Conditions
VDS = 10V, VGS = 0
VGS = 8V, VDS = 0
ID = 100µA, VGS = 0
ID = 100µA, VDS = VGS
ID = 20mA, VGS = 5V
ID = 20mA, VDS = 5V, f = 1kHz
min
typ
50
1.5
3.5
50
20
15
6
1.2
VDS = 5V, VGS = 0, f = 1MHz
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
max
10
50
10
20
Unit
µA
µA
V
V
Ω
mS
pF
pF
pF
ns
ns
ton, toff measurement circuit
Vout
VGS = 5V
50Ω
200Ω
100µF
*
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
Ciss
Coss
Crss
ton*
toff*
90%
10%
Vin
VDD = 5V
Vout
10%
90%
ton
toff
1
Silicon MOS FETs (Small Signal)
2SK657
PD  Ta
ID  VDS
120
60
0.6
100
Drain current ID (mA)
0.5
0.4
0.3
0.2
VGS=6.0V
5.5V
80
5.0V
60
4.5V
40
4.0V
3.5V
20
0.1
0
3.0V
2.5V
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
6
4
Coss
2
Crss
3
10
100
VIN  IO
100
VO=5V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
10
0
2
100
Ta=–25˚C
80
25˚C
75˚C
60
40
100
0
2
4
6
4
6
8
10
12
Gate to source voltage VGS (V)
RDS(on)  VGS
0
30
20
0
20
0
30
12
VDS=5V
Ta=25˚C
Drain current ID (mA)
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
8
Drain to source voltage VDS (V)
Input voltage VIN (V)
10
40
ID  VGS
Ciss
1
2
8
120
VGS=0
f=1MHz
Ta=25˚C
10
6
VDS=5V
Ta=25˚C
50
Drain to source voltage VDS (V)
Ciss, Coss, Crss  VDS
12
4
8
10
12
Gate to source voltage VGS (V)
Drain to source ON-resistance RDS(on) (Ω)
Allowable power dissipation PD (W)
Ta=25˚C
Forward transfer admittance |Yfs| (mS)
0.7
| Yfs |  VGS
120
ID=20mA
100
80
60
Ta=75˚C
40
25˚C
–25˚C
20
0
0
2
4
6
8
10
12
Gate to source voltage VGS (V)