Silicon MOS FETs (Small Signal) 2SK657 Silicon N-Channel MOS FET For switching unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 1.5 R0.9 R0.9 0.85 Ratings 50 8 ±100 ±200 400 150 −55 to +150 Symbol VDSS VGSO ID IDP PD Tch Tstg Unit V V mA mA mW °C °C 3 2 2.5 0.45±0.05 1 2.5 1.25±0.05 0.55±0.1 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature 4.5±0.1 0. 7 R 1.0±0.1 0.4 1.5 2.4±0.2 2.0±0.2 3.5±0.1 ● High-speed switching ● M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 4.1±0.2 ■ Features 1: Gate 2: Drain 3: Source EIAJ: SC-71 M Type Mold Package Internal Connection D G S ■ Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz min typ 50 1.5 3.5 50 20 15 6 1.2 VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω max 10 50 10 20 Unit µA µA V V Ω mS pF pF pF ns ns ton, toff measurement circuit Vout VGS = 5V 50Ω 200Ω 100µF * Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff* 90% 10% Vin VDD = 5V Vout 10% 90% ton toff 1 Silicon MOS FETs (Small Signal) 2SK657 PD Ta ID VDS 120 60 0.6 100 Drain current ID (mA) 0.5 0.4 0.3 0.2 VGS=6.0V 5.5V 80 5.0V 60 4.5V 40 4.0V 3.5V 20 0.1 0 3.0V 2.5V 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 6 4 Coss 2 Crss 3 10 100 VIN IO 100 VO=5V Ta=25˚C 30 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 10 0 2 100 Ta=–25˚C 80 25˚C 75˚C 60 40 100 0 2 4 6 4 6 8 10 12 Gate to source voltage VGS (V) RDS(on) VGS 0 30 20 0 20 0 30 12 VDS=5V Ta=25˚C Drain current ID (mA) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 8 Drain to source voltage VDS (V) Input voltage VIN (V) 10 40 ID VGS Ciss 1 2 8 120 VGS=0 f=1MHz Ta=25˚C 10 6 VDS=5V Ta=25˚C 50 Drain to source voltage VDS (V) Ciss, Coss, Crss VDS 12 4 8 10 12 Gate to source voltage VGS (V) Drain to source ON-resistance RDS(on) (Ω) Allowable power dissipation PD (W) Ta=25˚C Forward transfer admittance |Yfs| (mS) 0.7 | Yfs | VGS 120 ID=20mA 100 80 60 Ta=75˚C 40 25˚C –25˚C 20 0 0 2 4 6 8 10 12 Gate to source voltage VGS (V)