Composite Transistors XN1871 Silicon N-channel junction FET Unit: mm For amplification of the low frequency +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK198 × 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 ■ Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 4 0.95 ● Two elements incorporated into one package. (Soure-coupled FETs) Reduction of the mounting area and assembly cost by one half. 2.9 -0.05 ● 5 1.9±0.1 ■ Features 1.5 -0.05 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Drain to source voltage VDSX 30 V Rating Gate to drain voltage of Drain current element Gate current VGDO –30 V ID 20 mA IG 10 mA Total power dissipation PT 300 mW Overall Channel temperature Tch 150 ˚C Storage temperature Tstg –55 to +150 ˚C 1 : Gate (Tr1) 2 : Gate (Tr2) 3 : Drain (Tr2) Parameter 0.4±0.2 4 : Source 5 : Drain (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: 5T Internal Connection 5 FET 1 1 4 3 ■ Electrical Characteristics 0.1 to 0.3 FET 2 2 (Ta=25˚C) Symbol Conditions Drain current IDSS VDS = 10V, VGS = 0 Gate cutoff current IGSS VGS = –30V, VDS = 0 Gate to source cutoff voltage VGSC VDS = 10V, ID = 10µA min typ 0.5 – 0.1 max Unit 12 mA –100 nA –1.5 V gm VDS = 10V, ID = 0.5mA, f = 1MHz 4 gm VDS = 10V, VGS = 0V, f = 1MHz 4 Common source short-circuit input capacitance Ciss VDS = 10V, VGS = 0V, f = 1MHz 14 pF Common source reverse transfer capacitance Crss VDS = 10V, VGS = 0V, f = 1MHz 3.5 pF Noise voltage NV VDS = 30V, ID = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 60 mV Mutual conductance mS 12 mS 1 Composite Transistors XN1871 PT — Ta ID — VDS ID — VGS 8 500 9.6 VDS=10V 8.0 300 200 6 VGS=0V 5 4 –0.1V 3 –0.2V 2 Drain current ID (mA) 400 Drain current ID (mA) Total power dissipation PT (mW) Ta=25˚C 7 100 4.8 Ta=75˚C 3.2 25˚C –25˚C 1.6 –0.3V 1 6.4 –0.4V 0 0 40 80 120 0 160 2 4 gm — VGS 14 IDSS=5.0mA 10 8 2.0mA 4 2 16 IDSS=5.0mA 14 12 2.0mA 10 8 6 4 2 –0.6 –0.4 –0.2 0 0 0 2 4 6 8 Crss — VDS NF — f 12 5 VGS=3V f=1MHz Ta=25˚C VDS=10V ID=5.2mA Ta=25˚C 10 4 3 2 8 6 4 Rg=500Ω 1 2 1kΩ 0 2 3 5 10 20 30 50 100 Drain to source voltage VDS (V) 0 10 100 1k –0.6 –0.4 –0.2 0 10k Frequency f (Hz) 10 VGS=–3V f=1MHz Ta=25˚C 8 6 Ciss 4 Coss 2 0 1 2 3 5 10 20 30 50 100 Drain to source voltage VDS (V) Drain current ID (mA) Noise figure NF (dB) Common source reverse transfer capacitance Crss (pF) Gate to source voltage VGS (V) 1 –0.8 Gate to source voltage VGS (V) VDS=10V Ta=25˚C 18 Mutual conductance gm (mS) Mutual conductance gm (mS) 16 0 –0.8 0 –1.0 12 Ciss, Coss — VDS 20 VDS=10V Ta=25˚C 18 2 10 gm — ID 20 6 8 Drain to source voltage VDS (V) Ambient temperature Ta (˚C) 12 6 Common source short-circuit input capacitance, Ciss, Coss (pF) Common source short-circuit output capacitance 0 100k