STPS80L30CY ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) A1 2 x 40 A VRRM 30 V Tj (max) 150 °C VF (max) 0.38 V K A2 FEATURES AND BENEFITS n n n n n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED A2 K A1 DESCRIPTION Dual center tap Schottky rectifier suited for CAD computers and servers. Packaged in Max247, this device is intended for use in low voltage, high frequency switching power supplies, free wheeling and polarity protection applications. Max247 ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 30 V IF(RMS) RMS forward current 56 A 40 80 A 400 A 2 A 13000 W - 55 to + 150 °C 150 °C 10000 V/µs IF(AV) Average forward current Tc = 130°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRRM Repetitive peak reverse current tp = 2 µs F = 1kHz square PARM Repetitive peak avalanche power tp = 1µs Tstg Tj dV/dt * : Storage temperature range Per diode Per device Tj = 25°C Maximum operating junction temperature Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 4A 1/4 STPS80L30CY THERMAL RESISTANCES Symbol Parameter Rth (j-c) Junction to case Value Unit 0.7 °C/W Per diode Rth (c) Total 0.5 Coupling 0.3 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests conditions IR * Reverse leakage current Tj = 25°C Min. Typ. Forward voltage drop Unit 4 mA 1.5 A 0.48 V VR = VRRM Tj = 125°C VF * Max. 0.7 Tj = 25°C IF = 40 A Tj = 125°C IF = 40 A Tj = 25°C IF = 80 A Tj = 125°C IF = 80 A 0.34 0.38 0.58 0.48 0.53 * tp = 380 µs, δ < 2% Pulse test : To evaluate the maximum conduction losses use the following equation : P = 0.23 x IF(AV) + 0.0037 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average forward current versus ambient temperature (δ = 0.5, per diode). IF(av)(A) PF(av)(W) 22 20 18 16 14 12 10 8 6 4 2 0 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 δ=1 T IF(av) (A) 0 5 10 15 20 25 30 δ=tp/T 35 40 tp 45 50 Fig. 3: Normalized avalanche power derating versus pulse duration. 50 45 40 35 30 25 20 15 10 5 0 Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W T δ=tp/T 0 25 50 75 100 125 150 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 Tamb(°C) tp 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 2/4 Tj(°C) tp(µs) 0.1 1 0 10 100 1000 0 25 50 75 100 125 150 STPS80L30CY Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. IM(A) Zth(j-c)/Rth(j-c) 600 550 500 450 400 350 300 250 200 150 100 50 0 1E-3 1.0 0.8 0.6 δ = 0.5 Tc=25°C 0.4 Tc=75°C δ = 0.2 Tc=125°C t(s) 1E-2 T δ = 0.1 0.2 tp(s) Single pulse 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 1E-4 1E-3 δ=tp/T 1E-2 1E-1 tp 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) IR(mA) 10 5E+3 F=1MHz Tj=25°C Tj=150°C 1E+3 Tj=125°C 5 1E+2 1E+1 2 1E+0 Tj=25°C VR(V) VR(V) 1E-1 0 5 10 15 20 25 30 1 1 2 5 10 20 50 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 200 100 Tj=125°C (typical values) Tj=25°C 10 Tj=125°C VFM(V) 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 3/4 STPS80L30CY PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. E L1 A1 L b1 b2 e Ordering type b Marking STPS80L30CY STPS80L30CY n n Inches Min. Max. Min. Max. A 4.70 5.30 0.185 0.209 A1 2.20 2.60 0.087 0.102 b 1.00 1.40 0.038 0.055 b1 2.00 2.40 0.079 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.016 0.031 D 19.70 10.30 0.776 0.799 e 5.35 5.55 0.211 0.219 E 15.30 15.90 0.602 0.626 L 14.20 15.20 0.559 0.598 L1 3.70 4.30 0.146 0.169 A D Millimeters c Package Weight Base qty Delivery mode Max247 4.4 g 30 Tube EPOXY MEETS UL94,V0 COOLING METHOD: C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4