STPS80H100TV HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 40 A VRRM Tj (max) 100 V 150 °C VF (max) 0.65 V K2 A2 K1 A1 FEATURES AND BENEFITS NEGLIGIBLESWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOODTRADE OFF BETWEEN LEAKAGECURRENT AND FORWARD VOLTAGE DROP AVALANCHE RATED LOW INDUCTANCE PACKAGE INSULATED PACKAGE : Insulated voltage = 2500 V (RMS) Capacitance = 45 pF DESCRIPTION High voltage dual Schottky barrier rectifier designed for high frequency telecom and computer Switched Mode Power Supplies and other power converters. ISOTOPTM Packaged in ISOTOP, this device is intended for use in medium voltage operation, and particularly, in high frequen cy circuitries where low switching losses and low noise are required. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current IF(AV) Average forward current Tc = 120°C δ = 0.5 IFSM Surge non repetitive forward current IRRM IRSM Repetitive peak reverse current Non repetitive peak reverse current tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz T stg Tj Storage temperature range Maximum operating junction temperature * dV/dt * : Per diode Per device tp = 100 µs square Critical rate of rise of reverse voltage Value Unit 100 V 125 A 40 80 A 700 A 2 5 A A - 55 to+ 150 150 °C 10000 V/µs °C dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth(j−a) July 1999 - Ed: 3A 1/4 STPS80H100TV THERMAL RESISTANCES Symbol Parameter Junction to case Rth (j-c) Value Unit 1 °C/W Per leg Total Rth (c) 0.55 0.1 Coupling When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions IR * Reverse leakage current Tj = 25°C Min. Typ. Max. Unit 20 µA 7 25 mA V 0.61 0.78 0.65 VR = VRRM Tj = 125°C VF ** Forward voltage drop Tj = 25°C Tj = 125°C IF = 40 A IF = 40 A Tj = 25°C IF = 80 A Tj = 125°C IF = 80 A 0.89 0.7 0.74 * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% Pulse test : To evaluate the maximum conduction losses use the following equation : P = 0.56 x IF(AV) + 0.0022 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode). PF(av)(W) IF(av)(A) 35 δ = 0.05 30 δ = 0.1 δ = 0.2 δ = 0.5 25 δ=1 20 15 10 T 5 0 δ=tp/T IF(av) (A) 0 2/4 5 10 15 20 25 30 35 40 tp 45 50 50 45 40 35 30 25 20 15 10 5 0 Rth(j-a)=Rth(j-c) Rth(j-a)=5°C/W T δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 STPS80H100TV Fig. 3: Non repetitive surge peak forward current versusoverloadduration(maximum values, perdiode). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) IM(A) 500 1.0 400 0.8 300 0.6 δ = 0.5 Tc=50°C 0.4 200 Tc=75°C 100 Tc=110°C 0 1E-3 Single pulse t(s) δ=0.5 T 0.2 IM t δ = 0.2 δ = 0.1 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 1E-3 δ=tp/T tp(s) 1E-2 1E-1 tp 1E+0 5E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) IR(µA) 5.0 1E+4 Tj=125°C F=1MHz Tj=25°C 1E+3 1E+2 1.0 1E+1 1E+0 1E-1 Tj=25°C VR(V) VR(V) 0 10 20 30 40 50 60 70 80 90 100 0.1 1 2 5 10 20 50 100 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 500 100 Tj=125°C Tj=25°C 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/4 STPS80H100TV PACKAGE MECHANICAL DATA ISOTOPTM DIMENSIONS REF. Millimeters Min. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Cooling method: C Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Ordering type Marking STPS80H100TV STPS80H100TV Package Weight Base qty Delivery mode ISOTOP 27g without screws 10 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4