NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBT3904 Small Signal Transistors (NPN) SOT-23 FEATURES .122 (3.1) .118 (3.0) .016 (0.4) ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Top View 3 .056 (1.43) .052 (1.33) ¨ As complementary type, the PNP transistor MMBT3906 is recommended. 1 .016 (0.4) .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125) max. .004 (0.1) .037(0.95) .037(0.95) .016 (0.4) ¨ This transistor is also available in the TO-92 case with the type designation 2N3904. 2 .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking code: 1AM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 200 mA Ptot 225 (1) mW Collector Current Power Dissipation at TA = 25 ¡C 300 (2) Thermal Resistance Junction to Substrate Backside RqSB 320 (1) ¡C/W Thermal Resistance Junction to Ambient Air RqJA 450 (1) ¡C/W Junction Temperature Tj 150 ¡C Storage Temperature Range TS Ð65 to +150 ¡C NOTES: (1) Device on fiberglass substrate, see layout. (2) Device on alumina substrate. 1/5/99 MMBT3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 10 mA, IE = 0 V(BR)CBO 60 Ð V Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 V(BR)CEO 40 Ð V Emitter-Base Breakdown Voltage at IE = 10 mA, IC = 0 V(BR)EBO 6.0 Ð V Collector Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA VCEsat VCEsat Ð Ð 0.2 0.3 V V Base Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA VBEsat VBEsat Ð Ð 0.85 0.95 V V Collector-Emitter Cutoff Current VEB = 3 V, VCE = 30 V ICEV Ð 50 nA Emitter-Base Cutoff Current VEB = 3 V, VCE = 30 V IEBV Ð 50 nA DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 50 mA at VCE = 1 V, IC = 100 mA hFE hFE hFE hFE hFE 40 70 100 60 30 Ð Ð 300 Ð Ð Ð Ð Ð Ð Ð Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz hie 1 10 kW Gain-Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz fT 300 Ð MHz Collector-Base Capacitance at VCB = 5 V, f = 100 kHz CCBO Ð 4 pF Emitter-Base Capacitance at VEB = 0.5 V, f = 100 kHz CEBO Ð 8 pF MMBT3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Voltage Feedback Ratio VCE = 10 V, IC = 1 mA, f = 1 kHz hre 0.5 . 10Ð4 8 . 10Ð4 Ð Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz hfe 100 400 Ð Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz hoe 1 40 mS Noise Figure at VCE = 5 V, IC = 100 mA, RG = 1 kW, f = 10 É 15000 Hz NF Ð 5 dB Delay Time (see Fig. 1) at IB1 = 1 mA, IC = 10 mA td Ð 35 ns Rise Time (see Fig. 1) at IB1 = 1 mA, IC = 10 mA tr Ð 35 ns Storage Time (see Fig. 2) at ÐIB1 = IB2 = 1 mA, IC = 10 mA ts Ð 200 ns Fall Time (see Fig. 2) at ÐIB1 = IB2 = 1 mA, IC = 10 mA tf Ð 50 ns Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors 0.30 (7.5) 0.12 (3) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.03 (0.8) 0.47 (12) 0.2 (5) Dimensions in inches and (millimeters) 0.06 (1.5) 0.20 (5.1) Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors